DATA SHEET
Product specification
File under Discrete Semiconductors, SC14
September 1995
DISCRETE SEMICONDUCTORS
BFR106
NPN 5 GHz wideband transistor
September 1995
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.
PINNING
PIN
DESCRIPTION
Code: R7p
1
base
2
emitter
3
collector
Fig.1 SOT23.
age
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
20
V
V
CEO
collector-emitter voltage
open base
-
-
15
V
I
C
DC collector current
-
-
100
mA
P
tot
total power dissipation
up to T
s
= 70
C; note 1
-
-
500
mW
h
FE
DC current gain
I
C
= 50 mA; V
CE
= 9 V; T
amb
= 25
C
25
80
-
f
T
transition frequency
I
C
= 50 mA; V
CE
= 9 V; f = 500 MHz;
T
amb
= 25
C
-
5
-
GHz
G
UM
maximum unilateral power gain
I
C
= 30 mA; V
CE
= 6 V; f = 800 MHz;
T
amb
= 25
C
-
11.5
-
dB
V
o
output voltage
I
C
= 50 mA; V
CE
= 9 V; R
L
= 75
;
T
amb
= 25
C; d
im
=
-
60 dB;
f
(p
+
q
-
r)
= 793.25 MHz
-
350
-
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
20
V
V
CEO
collector-emitter voltage
open base
-
15
V
V
EBO
emitter-base voltage
open collector
-
3
V
I
C
DC collector current
-
100
mA
P
tot
total power dissipation
up to T
s
= 70
C; note 1
-
500
mW
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
175
C
September 1995
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
THERMAL RESISTANCE
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2. I
C
= 30 mA; V
CE
= 6 V; R
L
= 75
; T
amb
= 25
C;
f
(p
+
q)
= 810 MHz; V
o
= 100 mV.
3. d
im
=
-
60 dB (DIN 45004B); I
C
= 50 mA; V
CE
= 9 V; R
L
= 75
; T
amb
= 25
C; f
(p
+
q
-
r)
= 793.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
up to T
s
= 70
C; note 1
210 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 10 V
-
-
100
nA
h
FE
DC current gain
I
C
= 50 mA; V
CE
= 9 V
25
80
-
f
T
transition frequency
I
C
= 50 mA; V
CE
= 9 V; f = 500 MHz;
T
amb
= 25
C
-
5
-
GHz
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
1.5
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
4.5
-
pF
C
re
feedback capacitance
I
C
= 0; V
CE
= 10 V; f = 1 MHz
-
1.2
-
pF
G
UM
maximum unilateral power gain
(note 1)
I
C
= 30 mA; V
CE
= 6 V; f = 800 MHz;
T
amb
= 25
C
-
11.5
-
dB
F
noise figure
I
C
= 30 mA; V
CE
= 6 V; f = 800 MHz;
T
amb
= 25
C
-
3.5
-
dB
d
2
second order intermodulation
distortion
note 2
-
-
50
-
dB
V
o
output voltage
note 3
-
350
-
mV
G
UM
10 log
S
21
2
1
S
11
2
1
S
22
2
--------------------------------------------------------------
dB.
=
September 1995
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
Fig.2 Power derating curve.
1/2 page (Datasheet)
22 mm
s
0
50
100
200
200
0
MEA398 - 1
150
T ( C)
o
Ptot
(mW)
400
600
Fig.3
DC current gain as a function of collector
current.
V
CE
= 9 V; T
amb
= 25
C.
handbook, halfpage
0
120
80
40
0
40
120
MBB774
80
I (mA)
C
h FE
Fig.4
Transition frequency as a function of
collector current.
V
CE
= 9 V; f = 500 MHz; T
j
= 25
C.
handbook, halfpage
0
40
80
8
6
2
0
4
MBB773
120
I (mA)
C
(GHz)
T
f
Fig.5
Maximum unilateral power gain as a
function of frequency.
I
C
= 30 mA; V
CE
= 6 V; T
amb
= 25
C.
handbook, halfpage
40
0
20
30
10
MEA399
10
2
10
3
10
4
10
f (MHz)
G UM
(dB)
September 1995
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
handbook, full pagewidth
MEA400
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
j
800
100
40 MHz
1
0.2
10
5
2
0.5
2000 MHz
1500
1200
1000
500
200
Fig.6 Common emitter input reflection coefficient (S
11
).
I
C
= 30 mA; V
CE
= 6 V; T
amb
= 25
C.
Z
o
= 50
.
handbook, full pagewidth
MEA403
180
+
-
0
30
60
90
120
150
150
120
90
60
30
40 MHz
100
40
20
50
30
10
2000 MHz
500
800
1000
1200
1500
200
Fig.7 Common emitter forward transmission coefficient (S
21
).
I
C
= 30 mA; V
CE
= 6 V; T
amb
= 25
C.
PDF 
ZIP