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Электронный компонент: BFR53

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DATA SHEET
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
1997 Oct 28
DISCRETE SEMICONDUCTORS
BFR53
NPN 2 GHz wideband transistor
1997 Oct 28
2
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
FEATURES
Very low intermodulation distortion
Very high power gain.
APPLICATIONS
Thick and thin-film circuits.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 SOT23.
fpage
MSB003
Top view
1
2
3
Marking code: N1.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
18
V
V
CEO
collector-emitter voltage
open base
-
10
V
I
CM
peak collector current
f
>
1 MHz
-
100
mA
P
tot
total power dissipation
T
s
85
C
-
250
mW
C
re
feedback capacitance
I
C
= 2 mA; V
CE
= 5 V; f = 1 MHz;
T
amb
= 25
C
0.9
-
pF
f
T
transition frequency
I
C
= 25 mA; V
CE
= 5 V; f = 500 MHz;
T
j
= 25
C
2
-
GHz
G
UM
maximum unilateral power gain I
C
= 30 mA; V
CE
= 5 V; f = 800 MHz;
T
amb
= 25
C
10.5
-
dB
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
18
V
V
CEO
collector-emitter voltage
open base
-
10
V
V
EBO
emitter-base voltage
open collector
-
2.5
V
I
C
collector current (DC)
-
50
mA
I
CM
peak collector current
f
>
1 MHz
-
100
mA
P
tot
total power dissipation
T
s
85
C (note 1)
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
1997 Oct 28
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point T
s
85
C; note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 10 V
-
-
50
nA
h
FE
DC current gain
I
C
= 25 mA; V
CE
= 5 V; see Fig.2
25
-
-
I
C
= 50 mA; V
CE
= 5 V; see Fig.2
25
-
-
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz;
see Fig.3
-
0.9
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
1.5
-
pF
C
re
feedback capacitance
I
C
= 2 mA; V
CE
= 5 V; f = 1 MHz;
T
amb
= 25
C
-
0.9
-
pF
f
T
transition frequency
I
C
= 25 mA; V
CE
= 5 V; f = 500 MHz;
see Fig.4
-
2
-
GHz
G
UM
maximum unilateral power gain
(note 1)
I
C
= 30 mA; V
CE
= 5 V; f = 800 MHz;
T
amb
= 25
C; see Fig.5
-
10.5
-
dB
F
noise figure
I
C
= 2 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
= 25
C; see Fig.6
-
-
5
dB
G
UM
10 log
S
21
2
1
S
11
2
1
S
22
2
-------------------------------------------------------------- dB
=
1997 Oct 28
4
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
Fig.2
DC current gain as a function of collector
current; typical values.
V
CE
= 5 V; T
j
= 25
C.
handbook, halfpage
I (mA)
C
MEA458
0
100
80
60
50
50
100
FE
h
70
90
Fig.3
Collector capacitance as a function of
collector-base voltage; typical values.
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
C.
handbook, halfpage
MEA457
0
16
2.0
0
1.6
20
1.2
0.4
C c
(pF)
VCB (V)
4
0.8
8
12
Fig.4
Transition frequency as a function of
collector current; typical values.
V
CE
= 5 V; f = 500 MHz; T
j
= 25
C.
handbook, halfpage
I (mA)
C
MEA459
0
2.2
1.8
1.4
1.0
50
T
f
(GHz)
25
Fig.5
Gain as a function of frequency;
typical values.
I
C
= 30 mA; V
CE
= 5 V; T
amb
= 25
C.
handbook, halfpage
MEA455
0
20
30
10
2
10
3
10
4
10
f (MHz)
gain
(dB)
I S I
12
2
G UM
1997 Oct 28
5
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
Fig.6
Minimum noise figure as a function of
collector current; typical values.
V
CE
= 5 V; f = 500 MHz; G
S
= 20 mS; B
S
is tuned; T
amb
= 25
C.
handbook, halfpage
MEA460
0
10
0
30
10
20
F
(dB)
5
40
I (mA)
C
Fig.7 Circles of constant noise figure; typical values.
I
C
= 2 mA; V
CE
= 5 V; f = 500 MHz; T
amb
= 25
C.
handbook, halfpage
0
20
40
80
0
MEA456
60
G (mS)
S
B S
(mS)
100
50
-
50
F = 5.5 dB
3.3
3.5
4.0
4.5
5.0