DATA SHEET
Product specification
File under Discrete Semiconductors, SC14
September 1995
DISCRETE SEMICONDUCTORS
BFR92
NPN 5 GHz wideband transistor
September 1995
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
DESCRIPTION
NPN transistor in a plastic SOT23
envelope primarily intended for use in
RF wideband amplifiers and
oscillators. The transistor features
low intermodulation distortion and
high power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
PNP complement is BFT92.
PINNING
PIN
DESCRIPTION
Code: P1p
1
base
2
emitter
3
collector
Fig.1 SOT23.
fpage
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
20
V
V
CEO
collector-emitter voltage
open base
-
15
V
I
C
DC collector current
-
25
mA
P
tot
total power dissipation
up to T
s
= 95
C; note 1
-
300
mW
f
T
transition frequency
I
C
= 14 mA; V
CE
= 10 V; f = 500 MHz;
T
j
= 25
C
5
-
GHz
C
re
feedback capacitance
I
C
= 2 mA; V
CE
= 10 V; f = 1 MHz
0.4
-
pF
G
UM
maximum unilateral power gain
I
C
= 14 mA; V
CE
= 10 V; f = 500 MHz;
T
amb
= 25
C
18
-
dB
F
noise figure
I
C
= 2 mA; V
CE
= 10 V; f = 500 MHz;
T
amb
= 25
C; Z
s
= opt.
2.4
-
dB
V
o
output voltage
d
im
=
-
60 dB; I
C
= 14 mA; V
CE
= 10 V;
R
L
= 75
; T
amb
= 25
C;
f
(p
+
q
-
r)
= 493.25 MHz
150
-
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
20
V
V
CEO
collector-emitter voltage
open base
-
15
V
V
EBO
emitter-base voltage
open collector
-
2
V
I
C
DC collector current
-
25
mA
P
tot
total power dissipation
up to T
s
= 95
C; note 1
-
300
mW
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
175
C
September 1995
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
THERMAL RESISTANCE
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2. Crystal mounted in a SOT37 envelope (BFR90).
3. d
im
=
-
60 dB (DIN 45004B); I
C
= 14 mA; V
CE
= 10 V; R
L
= 75
; T
amb
= 25
C;
V
p
= V
o
at d
im
=
-
60 dB; f
p
= 495.25 MHz;
V
q
= V
o
-
6 dB; f
q
= 503.25 MHz;
V
r
= V
o
-
6 dB; f
r
= 505.25 MHz;
measured at f
(p
+
q
-
r
) = 493.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
up to T
s
= 95
C; note 1
260 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 10 V
-
-
50
nA
h
FE
DC current gain
I
C
= 14 mA; V
CE
= 10 V
40
90
-
f
T
transition frequency
I
C
= 14 mA; V
CE
= 10 V; f = 500 MHz
-
5
-
GHz
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
0.75
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
0.8
-
pF
C
re
feedback capacitance
I
C
= 2 mA; V
CE
= 10 V; f = 1 MHz;
T
amb
= 25
C
-
0.4
-
pF
G
UM
maximum unilateral power gain
(note 1)
I
C
= 14 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
-
18
-
dB
F
noise figure (see Fig.2 and note 2) I
C
= 2 mA; V
CE
= 10 V; f = 500 MHz;
T
amb
= 25
C; Z
s
= opt.
-
2.4
-
dB
V
o
output voltage
note 3
-
150
-
mV
G
UM
10 log
S
21
2
1
S
11
2
1
S
22
2
--------------------------------------------------------------
dB
=
September 1995
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
Fig.2 Intermodulation distortion test circuit.
L2 = L3 = 5
H Ferroxcube choke, catalogue
number 3122 108 20150.
L1 = 4 turns 0.35 mm copper wire; winding pitch
1 mm; internal diameter 4 mm.
handbook, halfpage
MEA446
680 pF
300
L1
L2
680 pF
75
input
75
output
16
3.9 k
L3
390
820
650 pF
DUT
24 V
Fig.3 Power derating curve.
handbook, halfpage
0
50
100
200
400
300
100
0
200
MEA425 - 1
150
P
tot
(mW)
T
s
(
o
C)
Fig.4
DC current gain as a function of collector
current.
V
CE
= 10 V; T
j
= 25
C.
handbook, halfpage
0
10
20
30
120
0
40
80
MCD074
h FE
I (mA)
C
Fig.5
Collector capacitance as a function of
collector-base voltage.
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
1
0
0.8
MEA428
0.6
0.4
0.2
C c
(pF)
V CB (V)
September 1995
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
Fig.6
Transition frequency as a function of
collector current.
V
CE
= 10 V; f = 500 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
30
6
0
2
4
MEA444
I (mA)
C
f T
(GHz)
Fig.7 Gain as a function of frequency.
I
C
= 14 mA; V
CE
= 10 V; T
amb
= 25
C.
handbook, halfpage
MEA427
0
20
30
10
2
10
3
10
4
10
f (MHz)
gain
(dB)
G UM
I S I
12
2
Fig.8
Minimum noise figure as a function of
frequency.
I
C
= 2 mA; V
CE
= 10 V; T
amb
= 25
C; Z
s
= opt.
handbook, halfpage
4
2
1
0
10
MEA465
1
10
3
F
(dB)
1
f (GHz)
5
6
Fig.9
Minimum noise figure as a function of
collector current.
V
CE
= 10 V; f = 500 MHz; T
amb
= 25
C; Z
s
= opt.
handbook, halfpage
MEA424
0
20
5
0
1
2
3
4
5
10
15
F
(dB)
I C (mA)
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