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Электронный компонент: BFS520

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DATA SHEET
Product specification
File under Discrete Semiconductors, SC14
September 1995
DISCRETE SEMICONDUCTORS
BFS520
NPN 9 GHz wideband transistor
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for wideband
applications such as satellite TV
tuners, cellular phones, cordless
phones, pagers etc., with signal
frequencies up to 2 GHz.
PINNING
PIN
DESCRIPTION
Code: N2
1
base
2
emitter
3
collector
Fig.1 SOT323.
handbook, 2 columns
3
1
2
MBC870
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
20
V
V
CES
collector-emitter voltage
R
BE
= 0
-
-
15
V
I
C
DC collector current
-
-
70
mA
P
tot
total power dissipation
up to T
s
= 118
C; note 1
-
-
300
mW
h
FE
DC current gain
I
C
= 20 mA; V
CE
= 6 V; T
j
= 25
C
60
120
250
f
T
transition frequency
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
C
-
9
-
GHz
G
UM
maximum unilateral power gain
I
c
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
-
15
-
dB
F
noise figure
I
c
= 5 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
-
1.1
1.6
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
20
V
V
CES
collector-emitter voltage
R
BE
= 0
-
15
V
V
EBO
emitter-base voltage
open collector
-
2.5
V
I
C
DC collector current
-
70
mA
P
tot
total power dissipation
up to T
s
= 118
C; note 1
-
300
mW
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
175
C
September 1995
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
THERMAL RESISTANCE
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C, unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2. I
C
= 20 mA; V
CE
= 6 V; R
L
= 50
; f = 900 MHz; T
amb
= 25
C;
f
p
= 900 MHz; f
q
= 902 MHz; measured at f
(2p
-
q)
= 898 MHz and at f
(2q
-
p)
= 904 MHz.
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
up to T
s
= 118
C; note 1
190 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CE
= 6 V
-
-
50
nA
h
FE
DC current gain
I
C
= 20mA; V
CE
= 6 V
60
120
250
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
1
-
pF
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 6 V; f = 1 MHz
-
0.5
-
pF
C
re
feedback capacitance
I
C
= 0; V
CB
= 6 V; f = 1 MHz
-
0.4
-
pF
f
T
transition frequency
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
C
-
9
-
GHz
G
UM
maximum unilateral power gain
(note 1)
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
-
15
-
dB
I
C
= 20 mA; V
CE
= 6 V; f = 2 GHz;
T
amb
= 25
C
-
9
-
dB
S
21
2
insertion power gain
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
13
14
-
dB
F
noise figure
s
=
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
C
-
1.1
1.6
dB
s
=
opt
; I
C
= 20 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
C
-
1.6
2.1
dB
s
=
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 2 GHz; T
amb
= 25
C
-
1.9
-
dB
P
L1
output power at 1 dB gain
compression
I
c
= 20 mA; V
CE
= 6 V; R
L
= 50
;
f = 900 MHz; T
amb
= 25
C
-
17
-
dBm
ITO
third order intercept point
note 2
-
26
-
dBm
G
UM
10 log
S
21
2
1
S
11
2
1
S
22
2
--------------------------------------------------------------
dB.
=
September 1995
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
400
300
100
0
200
MRC030 - 1
150
P
tot
(mW)
T
s
(
o
C)
Fig.3
DC current gain as a function of collector
current.
V
CE
= 6 V; T
j
= 25
C.
handbook, halfpage
MRC028
0
50
100
150
200
10
-
1
10
-
2
1
10
10
2
IC (mA)
h FE
Fig.4
Feedback capacitance as a function of
collector-base voltage.
I
C
= 0; f = 1 MHz.
handbook, halfpage
MRC021
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
2
4
6
8
10
V (V)
CB
C re
(pF)
Fig.5
Transition frequency as a function of
collector current.
f = 1 GHz; T
amb
= 25
C.
handbook, halfpage
MRC022
0
2
4
6
8
10
12
1
10
100
f T
(GHz)
IC (mA)
3 V
= 8 V
CE
V
September 1995
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
In Figs 6 to 9, G
UM
= maximum unilateral power gain;
MSG = maximum stable gain; G
max
= maximum available
gain.
Fig.6
Maximum unilateral power gain as a
function of collector current.
V
CE
= 6 V; f = 900 MHz; T
amb
= 25
C.
handbook, halfpage
MRC027
10
12
14
16
18
20
0
10
20
30
GUM
(dB)
IC (mA)
3 V
= 6 V
CE
V
Fig.7 Gain as a function of collector current.
V
CE
= 6 V; f = 2 GHz; T
amb
= 25
C.
handbook, halfpage
MRC026
0
5
10
15
20
25
0
10
20
30
MSG
GUM
Gmax
gain
(dB)
IC (mA)
Fig.8 Gain as a function of frequency.
I
C
= 5 mA; V
CE
= 6 V; T
amb
= 25
C.
handbook, halfpage
MRC024
0
10
20
30
40
50
10
-
1
10
-
2
1
10
f (GHz)
MSG
GUM
Gmax
gain
(dB)
Fig.9 Gain as a function of frequency.
I
C
= 20 mA; V
CE
= 6 V; T
amb
= 25
C.
handbook, halfpage
MRC025
0
10
20
30
40
50
10
-
1
10
-
2
1
10
f (GHz)
MSG
GUM
Gmax
gain
(dB)