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Электронный компонент: BFT25

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DATA SHEET
Product specification
File under Discrete Semiconductors, SC14
November 1992
DISCRETE SEMICONDUCTORS
BFT25
NPN 2 GHz wideband transistor
November 1992
2
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
DESCRIPTION
NPN transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
low power amplifiers, such as in
pocket phones, paging systems, etc.
The transistor features low current
consumption (100
A to 1 mA); due to
its high transition frequency, it also
has excellent wideband properties
and low noise up to high frequencies.
PINNING
PIN
DESCRIPTION
Code: V1p
1
base
2
emitter
3
collector
Fig.1 SOT23.
fpage
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
8
V
V
CEO
collector-emitter voltage
open base
-
5
V
I
c
DC collector current
-
6.5
mA
P
tot
total power dissipation
up to T
s
= 167
C; note 1
-
30
mW
f
T
transition frequency
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
C
2.3
-
GHz
C
re
feedback capacitance
I
C
= 1 mA; V
CE
= 1 V; f = 1 MHz;
T
amb
= 25
C
-
0.45
pF
G
UM
maximum unilateral power gain I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
C
18
-
dB
F
noise figure
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
C
3.8
-
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
8
V
V
CEO
collector-emitter voltage
open base
-
5
V
V
EBO
emitter-base voltage
open collector
-
2
V
I
C
DC collector current
-
6.5
mA
I
CM
peak collector current
f
>
1 MHz
-
10
mA
P
tot
total power dissipation
up to T
s
= 167
C; note 1
-
30
mW
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
175
C
November 1992
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
THERMAL RESISTANCE
Note
1. T
s
= is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
up to T
s
= 167
C; note 1
260 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 5 V
-
-
50
nA
h
FE
DC current gain
I
C
= 10
A; V
CE
= 1 V
20
30
-
I
C
= 1 mA; V
CE
= 1 V
20
40
-
f
T
transition frequency
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz
1.2
2.3
-
GHz
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 0.5 V; f = 1 MHz
-
-
0.6
pF
C
e
emitter capacitance
I
c
= i
c
= 0; V
EB
= 0; f = 1 MHz
-
-
0.5
pF
C
re
feedback capacitance
I
C
= 1 mA; V
CE
= 1 V; f = 1 MHz;
T
amb
= 25
C
-
-
0.45
pF
G
UM
maximum unilateral power gain
(note 1)
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
C
-
18
-
dB
I
C
= 1 mA; V
CE
= 1 V; f = 800 MHz;
T
amb
= 25
C
-
12
-
dB
F
noise figure
I
C
= 0.1 mA; V
CE
= 1 V;
f = 500 MHz; T
amb
= 25
C
-
5.5
-
dB
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
C
-
3.8
-
dB
G
UM
10 log
S
21
2
1
S
11
2
1
S
22
2
--------------------------------------------------------------
dB.
=
November 1992
4
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
Fig.2
DC current gain as a function of collector
current.
V
CE
= 1 V; T
j
= 25
C.
handbook, halfpage
10
0
MEA908
1
10
1
10
2
10
3
40
60
20
I (mA)
C
h
FE
Fig.3
Collector capacitance as a function of
collector-base voltage.
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
C.
0
2
4
8
1
0
0.8
MEA914
6
0.6
0.4
0.2
C c
(pF)
V CB (V)
10
Fig.4
Transition frequency as a function of
collector current.
V
CE
= 1 V; f = 500 MHz; T
j
= 25
C.
handbook, halfpage
0
0.5
1
2
2
0
3
MEA907
1.5
I (mA)
C
(GHz)
T
f
1
Fig.5
Minimum noise figure as a function of
collector current.
V
CE
= 1 V; Z
S
= opt.; f = 500 MHz; T
amb
= 25
C.
handbook, halfpage
10
0
MEA909
1
10
1
10
2
4
8
2
I (mA)
C
F
(dB)
6
November 1992
5
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
handbook, full pagewidth
MEA916
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
j
1
0.2
10
5
2
0.5
800 MHz
500
200
Fig.6 Common emitter input reflection coefficient (S
11
).
I
C
= 1 mA; V
CE
= 1 V; T
amb
= 25
C.
Z
o
= 50
.
Fig.7 Common emitter forward transmission coefficient (S
21
).
I
C
= 1 mA; V
CE
= 1 V; T
amb
= 25
C.
handbook, full pagewidth
MEA918
+
-
0
30
60
90
120
150
180
150
120
90
60
30
500
1
800 MHz
200
2
3