DATA SHEET
Product specification
Supersedes data of 1999 Jul 23
1999 Aug 11
DISCRETE SEMICONDUCTORS
BGA2001
Silicon MMIC amplifier
M3D124
1999 Aug 11
2
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
FEATURES
Low current, low voltage
Very high power gain
Low noise figure
Integrated temperature compensated biasing
Supply and RF output pin combined.
APPLICATIONS
RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors
Low noise amplifiers
Satellite television tuners (SATV)
High frequency oscillators.
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin dual-emitter SOT343R
package.
PINNING
PIN
DESCRIPTION
1
GND
2
RF in
3
GND
4
V
S
+ RFout
handbook, halfpage
Top view
MAM430
2
1
4
3
BIAS
CIRCUIT
RFin
GND
VS+RFout
Fig.1 Simplified outline (SOT343R) and symbol.
Marking code: A1.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
S
DC supply voltage
RF input AC coupled
-
4.5
V
I
S
DC supply current
V
VS-OUT
= 2.5 V; RF input AC coupled
4.5
-
mA
MSG
maximum stable gain
V
VS-OUT
= 2.5 V; f = 1.8 GHz;
T
amb
= 25
C
19.5
-
dB
NF
noise figure
V
VS-OUT
= 2.5 V; f = 1.8 GHz;
S
=
opt
1.3
-
dB
1999 Aug 11
3
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
RF input AC coupled; T
j
= 25
C; unless otherwise specified.
Note
1. See application note: RNR-T45-99-B-0513.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S
supply voltage
RF input AC coupled
-
4.5
V
I
S
supply current (DC)
forced by DC voltage on RF input
-
30
mA
P
tot
total power dissipation
T
s
100
C
-
135
mW
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
150
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
350
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
S
supply current
V
VS-OUT
= 1 V
-
0.7
-
mA
V
VS-OUT
= 2.5 V
3
4.5
6
mA
V
VS-OUT
= 4.5 V
-
11
-
mA
MSG
maximum stable gain
V
VS-OUT
= 2.5 V;
I
VS-OUT
= 4 mA; f = 900 MHz
-
22
-
dB
V
VS-OUT
= 2.5 V;
I
VS-OUT
= 4 mA; f = 1.8 GHz
-
19.5
-
dB
|
s
21
|
2
insertion power gain
V
VS-OUT
= 2.5 V;
I
VS-OUT
= 4 mA; f = 900 MHz
-
18
-
dB
V
VS-OUT
= 2.5 V;
I
VS-OUT
= 4 mA; f = 1.8 GHz
-
14
-
dB
P
L
load power
at 1 dB gain compression point;
V
VS-OUT
= 2.5 V;
I
VS-OUT
= 4.4 mA; f = 900 MHz;
-
-
2
-
dBm
NF
noise figure
V
VS-OUT
= 2.5 V;
I
VS-OUT
= 4 mA; f = 900 MHz;
S
=
opt
-
1.3
-
dB
V
VS-OUT
= 2.5 V;
I
VS-OUT
= 4 mA; f = 1.8 GHz;
S
=
opt
-
1.3
-
dB
IP3
(in)
input intercept point; note 1
V
VS-OUT
= 2.5 V;
I
VS-OUT
= 4.4 mA; f = 900 MHz
-
-
7.4
-
dBm
V
VS-OUT
= 2.5 V;
I
VS-OUT
= 4.5 mA;
f = 1800 MHz
-
-
4.5
-
dBm
1999 Aug 11
4
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
handbook, halfpage
MGS605
100 pF
R1
C
C
RF in
RF out
VS
GND
VS-OUT
GND
IN
BGA2001
L1
Fig.2 Typical application circuit.
handbook, halfpage
0
50
100
200
200
150
50
0
100
MGS606
150
Ts (
C)
Ptot
(mW)
Fig.3 Power derating curve.
handbook, halfpage
-
40
0
40
120
12
0
8
10
MGS607
80
6
4
2
Tamb (
C)
IVS-OUT
(mA)
(7)
(2)
(6)
(3)
(5)
(4)
(8)
(1)
Fig.4
Bias current (I
VS-OUT
) as a function of
ambient temperature with V
VS-OUT
as
parameter; typical values.
(1) V
VS-OUT
= 1 V
(2) V
VS-OUT
= 1.5 V
(3) V
VS-OUT
= 2 V
(4) V
VS-OUT
= 2.5 V
(5) V
VS-OUT
= 3 V
(6) V
VS-OUT
= 3.5 V
(7) V
VS-OUT
= 4 V
(8) V
VS-OUT
= 4.5 V.
handbook, halfpage
0
16
8
12
4
0
1
5
MGS608
2
3
4
VVS-OUT (V)
IVS-OUT
(mA)
Fig.5
Bias current (I
VS-OUT
) as a function of
voltage at the output pin (V
VS-OUT
);
typical values.
1999 Aug 11
5
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
handbook, halfpage
0
2
4
10
gain
(dB)
30
0
20
MGS609
8
25
6
15
10
5
IVS-OUT (mA)
GUM
MSG
Fig.6
Gain as a function of bias current
(I
VS-OUT
); typical values.
f = 900 MHz.
handbook, halfpage
0
2
4
10
gain
(dB)
25
0
20
MGS610
8
6
15
10
5
IVS-OUT (mA)
GUM
MSG
Fig.7
Gain as a function of bias current
(I
VS-OUT
); typical values.
f = 1800 MHz.
handbook, halfpage
40
0
MGS611
10
2
10
3
10
4
10
20
30
gain
(dB)
Gmax
GUM
MSG
f (MHz)
Fig.8
Gain as a function of frequency;
typical values.
V
VS-OUT
= 2.5 V; I
VS-OUT
= 4 mA.
handbook, halfpage
3
0
MGS612
10
-
1
1
10
0.5
1
1.5
2.5
2
NFmin
(dB)
IC (mA)
(2)
(3)
(4)
(1)
Fig.9
Minimum noise figure as a function of bias
current (I
VS-OUT
); typical values.
(1) f = 2400 MHz
(2) f = 1000 MHz
(3) f = 900 MHz
(4) f = 1800 MHz.
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