DATA SHEET
Product specification
Supersedes data of 2000 Sep 06
2000 Dec 04
DISCRETE SEMICONDUCTORS
BGA2012
1900 MHz high linear low noise
amplifier
book, halfpage
MBD128
2000 Dec 04
2
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
FEATURES
Low current, low voltage
High linearity
High power gain
Low noise
Integrated temperature compensated biasing
Control pin for adjustment bias current.
APPLICATIONS
RF front end
Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
PINNING
PIN
DESCRIPTION
1
RF in
2
V
C
3
V
S
4
RF out
5, 6
GND
handbook, halfpage
Top view
MBL251
BIAS
CIRCUIT
RF in
RF out
GND
VS
VC
1
3
2
4
5
6
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: A6-
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
S
DC supply voltage
RF input AC coupled
3
4.5
V
I
S
DC supply current
7.5
-
mA
I
C
DC control current
V
C
= V
S
0.11
-
mA
|s
21
|
2
insertion power gain
in application circuit, see Fig.2;
f = 1900 MHz
16
-
dB
NF
noise figure
I
S
= 7 mA; f = 1900 MHz
1.7
-
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S
DC supply voltage
RF input AC coupled
-
4.5
V
V
C
voltage on control pin
-
V
S
V
I
S
supply current
forced by DC voltage on RF input
-
15
mA
I
C
control current
-
0.25
mA
P
tot
total power dissipation
T
s
100
C
-
70
mW
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
150
C
2000 Dec 04
3
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
THERMAL CHARACTERISTICS
CHARACTERISTICS
RF input AC coupled; V
S
= 3 V; I
S
= 7 mA; f = 1900 MHz; T
j
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction
to solder point
P
tot
= 135 mW; T
s
100
C
350
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
S
supply current
5
7.5
10
mA
I
C
control current
-
0.11
-
mA
R
L IN
return losses input
typical application; see Fig.2
-
-
11
-
dB
high IP3 (see Fig.2; stripline = 0 mm)
-
-
20
-
dB
high IP3 (see Fig.2; stripline = 0.5 mm)
-
-
14
-
dB
R
L OUT
return losses output
typical application; see Fig.2
-
-
9
-
dB
high IP3 (see Fig.2; stripline = 0 mm)
-
-
10
-
dB
high IP3 (see Fig.2; stripline = 0.5 mm)
-
-
8
-
dB
|s
21
|
2
insertion power gain
typical application (see Fig.2)
-
14
-
dB
high IP3 (see Fig.2; stripline = 0 mm)
-
16
-
dB
high IP3 (see Fig.2; stripline = 0.5 mm)
-
14
-
dB
NF
noise figure
typical application; see Fig.2; I
S
= 7 mA
-
1.7
-
dB
high IP3 (see Fig.2; stripline = 0 mm)
-
2.2
-
dB
high IP3 (see Fig.2; stripline = 0.5 mm)
-
2.3
-
dB
IP3
in
input intercept point
typical application; see Fig.2
-
-
7
-
dBm
high IP3 (see Fig.2; stripline = 0 mm)
-
7
-
dBm
high IP3 (see Fig.2; stripline = 0.5 mm)
-
10
-
dBm
2000 Dec 04
4
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
APPLICATION INFORMATION
List of components (see Fig.2)
Note
1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (
r
= 6.15),
board thickness = 0.64 mm, copper thickness = 35
m, gold thickness = 5
m.
COMPONENT
DESCRIPTION
TYPICAL
APPLICATION
HIGH IP3
APPLICATION
DIMENSIONS
C1, C2
multilayer ceramic chip capacitor
100 pF
100 pF
0603
C3, C5
multilayer ceramic chip capacitor
22 nF
22 nF
0603
C4
multilayer ceramic chip capacitor
-
-
-
C6
multilayer ceramic chip capacitor
-
100 nF
0805
L1
SMD inductor
-
3.9 nH
0603
L2
SMD inductor
-
3.9 nH
0603
handbook, full pagewidth
GND
OUT
stripline
BIAS
CIRCUIT
C1
C6
L1
VC
L2
RF in
VS
VC
IN
C4
SOT363
C5
C2
RF out
C3
VS
MLD470
Fig.2 Application circuit.
2000 Dec 04
5
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
handbook, halfpage
0
1000
f (MHz)
gain
(dB)
3000
25
0
2000
5
10
15
20
MLD471
s21
2
GUM
Gmax
Fig.3
Insertion gain (
|
s
21
|
2
), G
UM
and G
max
as
functions of frequency; typical values.
I
C
= 7 mA; V
S
= V
C
= 3 V; P
D
=
-
30 dBm; Z
o
= 50
.
handbook, halfpage
0
IS
1
VC (V)
gain
(dB)
3
20
0
2
4
8
12
16
IS
(mA)
10
0
2
4
6
8
MLD472
s21
2
Fig.4
Insertion gain and supply current as
functions of control voltage; typical values.
f = 1900 MHz; V
S
= 3 V; P
D
=
-
30 dBm.
handbook, halfpage
20
10
5
0
15
MLD473
10
-
3
10
-
2
10
-
1
IC (mA)
s21
2
(dB)
f = 1900 MHz; V
S
= 3 V; P
D
=
-
30 dBm.
Fig.5
Insertion gain as a function of control
current; typical values.
handbook, halfpage
0
IS (mA)
IP3out
(dBm)
2
4
8
10
0
-
5
5
IP3in
(dBm)
0
-
10
-
15
-
5
6
MLD474
IP3out
IP3in
V
S
= V
C
= 3 V; P
D
=
-
30 dBm (both tones); f = 1900 MHz;
f = 100 kHz.
Fig.6
Output and input 3rd order intercept point
as functions of supply current; typical
application; typical values.
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