2002 Aug 06
2
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2709
FEATURES
Internally matched to 50
Very wide frequency range (3.6 GHz at 3 dB bandwidth)
Flat 23 dB gain (DC to 2.6 GHz at 1 dB flatness)
12.5 dBm saturated output power at 1 GHz
High linearity (22 dBm OIP3 at 1 GHz)
Unconditionally stable (K > 1.2).
APPLICATIONS
Cable systems
LNB IF amplifiers
General purpose
ISM.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN
DESCRIPTION
1
V
S
2, 5
GND2
3
RF out
4
GND1
6
RF in
MAM455
1
3
2
4
1
6
3
2, 5
4
5
6
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: E3-.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
S
DC supply voltage
5
6
V
I
S
DC supply current
23.5
-
mA
|s
21
|
2
insertion power gain
f = 1 GHz
22.7
-
dB
NF
noise figure
f = 1 GHz
4
-
dB
P
L(sat)
saturated load power
f = 1 GHz
12.5
-
dBm
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S
DC supply voltage
RF input AC coupled
-
6
V
I
S
supply current
-
35
mA
P
tot
total power dissipation
T
s
90
C
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
150
C
P
D
maximum drive power
-
10
dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Aug 06
3
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2709
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
S
= 5 V; I
S
= 23.5 mA; T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to solder
point
P
tot
= 200 mW; T
s
90
C
300
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
S
supply current
19
23.5
32
mA
|s
21
|
2
insertion power gain
f = 100 MHz
21
22.2
23
dB
f = 1 GHz
21
22.7
24
dB
f = 1.8 GHz
22
23.0
24
dB
f = 2.2 GHz
21
23.0
24
dB
f = 2.6 GHz
20
22.1
23
dB
f = 3 GHz
18
21.1
22
dB
R
L IN
return losses input
f = 1 GHz
9
11
-
dB
f = 2.2 GHz
9
11
-
dB
R
L OUT
return losses output
f = 1 GHz
17
20
-
dB
f = 2.2 GHz
20
24
-
dB
|s
12
|
2
isolation
f = 1.6 GHz
31
33
-
dB
f = 2.2 GHz
34
36
-
dB
NF
noise figure
f = 1 GHz
-
4.0
4.4
dB
f = 2.2 GHz
-
4.4
4.9
dB
BW
bandwidth
at
|
s
21
|
2
-
3 dB below flat gain at 1 GHz
3.1
3.6
-
GHz
K
stability factor
f = 1 GHz
1.3
1.7
-
-
f = 2 GHz
1.8
2.2
-
-
P
L(sat)
saturated load power
f = 1 GHz
11
12.5
-
dBm
f = 2.2 GHz
5
7.5
-
dBm
P
L 1 dB
load power
at 1 dB gain compression; f = 1 GHz
7
8.3
-
dBm
at 1 dB gain compression; f = 2.2 GHz
3
5.4
-
dBm
IP3
(in)
input intercept point
f = 1 GHz
-
3
-
1
-
dBm
f = 2.2 GHz
-
7
-
9
-
dBm
IP3
(out)
output intercept point
f = 1 GHz
20
22
-
dBm
f = 2.2 GHz
12
14
-
dBm
2002 Aug 06
4
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2709
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGA2709 MMIC. The device is internally matched to 50
,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2,
C3 should be not more than 100 pF for applications above
100 MHz. However, when the device is operated below
100 MHz, the capacitor value should be increased.
The nominal value of the RF choke, L1 is 100 nH. At
frequencies below 100 MHz this value should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value must be used (e.g. 10 nH) to improve return
losses. For optimal results, a good quality chip inductor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.
Both the RF choke, L1 and the 22 nF supply decoupling
capacitor, C1 should be located as closely as possible to
the MMIC.
Separate paths must be used for the ground planes of the
ground pins GND1, GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristics of the MMIC make
it and ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
In Fig.6 the MMIC is used as a driver to the power amplifier
in part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
handbook, halfpage
MGU436
RF out
RF in
C1
L1
C2
C3
GND2
GND1
Vs
Vs
RF input
RF output
Fig.2 Typical application circuit.
handbook, halfpage
DC-block
100 pF
DC-block
100 pF
DC-block
100 pF
input
output
MGU437
Fig.3 Simple cascade circuit.
handbook, halfpage
from RF
circuit
to IF circuit
or demodulator
MGU438
mixer
oscillator
wideband
amplifier
Fig.4 IF amplifier application.
handbook, halfpage
antenna
to IF circuit
or demodulator
MGU439
mixer
oscillator
LNA
wideband
amplifier
Fig.5 RF amplifier application.
handbook, halfpage
from modulation
or IF circuit
to power
amplifier
MGU440
mixer
oscillator
wideband
amplifier
Fig.6 Power amplifier driver application.
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