2002 Sep 10
2
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
FEATURES
Internally matched to 50
Wide frequency range (3.2 GHz at 3 dB bandwidth)
Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)
5 dBm saturated output power at 1 GHz
Good linearity (11 dBm IP3
(out)
at 1 GHz)
Unconditionally stable (K > 1.5).
APPLICATIONS
LNB IF amplifiers
Cable systems
ISM
General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN
DESCRIPTION
1
V
S
2, 5
GND2
3
RF out
4
GND1
6
RF in
MAM455
1
3
2
4
1
6
3
2, 5
4
5
6
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: E2-.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
S
DC supply voltage
5
6
V
I
S
DC supply current
12.3
-
mA
s
21
2
insertion power gain
f = 1 GHz
21.3
-
dB
NF
noise figure
f = 1 GHz
3.9
-
dB
P
L(sat)
saturated load power
f = 1 GHz
4.8
-
dBm
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S
DC supply voltage
RF input AC coupled
-
6
V
I
S
supply current
-
35
mA
P
tot
total power dissipation
T
s
90
C
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
150
C
P
D
maximum drive power
-
10
dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Sep 10
3
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
S
= 5 V; I
S
= 12.3 mA; T
j
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to
solder point
P
tot
= 200 mW; T
s
90
C
300
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
S
supply current
9
12.3
15
mA
s
21
2
insertion power gain
f = 100 MHz
20
20.8
22
dB
f = 1 GHz
20
21.3
22
dB
f = 1.8 GHz
20
22
23
dB
f = 2.2 GHz
20
22
23
dB
f = 2.6 GHz
19
21.2
22
dB
f = 3 GHz
16
19.3
21
dB
R
L IN
return losses input
f = 1 GHz
12
14
-
dB
f = 2.2 GHz
8
10
-
dB
R
L OUT
return losses output
f = 1 GHz
17
20
-
dB
f = 2.2 GHz
15
18
-
dB
s
12
2
isolation
f = 1.6 GHz
31
33
-
dB
f = 2.2 GHz
36
39
-
dB
NF
noise figure
f = 1 GHz
-
3.9
4.3
dB
f = 2.2 GHz
-
4.3
4.7
dB
BW
bandwidth
at
s
21
2
-
3 dB below flat gain at 1 GHz 2.8
3.2
-
GHz
K
stability factor
f = 1 GHz
1.5
2
-
-
f = 2.2 GHz
2.5
3
-
-
P
L(sat)
saturated load power
f = 1 GHz
3
4.8
-
dBm
f = 2.2 GHz
0
1.3
-
dBm
P
L 1 dB
load power
at 1 dB gain compression; f = 1 GHz
-
2
0.2
-
dBm
at 1 dB gain compression; f = 2.2 GHz
-
4
-
2
-
dBm
IP3
(in)
input intercept point
f = 1 GHz
-
12
-
10
-
dBm
f = 2.2 GHz
-
14
-
16
-
dBm
IP3
(out)
output intercept point
f = 1 GHz
9
11
-
dBm
f = 2.2 GHz
4
6
-
dBm
2002 Sep 10
4
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGA2712 MMIC. The device is internally matched to 50
,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2
and C3 should not be more than 100 pF for applications
above 100 MHz. However, when the device is operated
below 100 MHz, the capacitor value should be increased.
The 22 nF supply decoupling capacitor C1 should be
located as closely as possible to the MMIC.
Separate paths must be used for the ground planes of the
ground pins GND1 and GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristics of the MMIC make
it an ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
In Fig.6 the MMIC is used as a driver to the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
handbook, halfpage
MGU435
RF out
RF in
C1
C2
C3
GND2
GND1
Vs
Vs
RF input
RF output
Fig.2 Typical application circuit.
handbook, halfpage
DC-block
100 pF
DC-block
100 pF
DC-block
100 pF
input
output
MGU437
Fig.3 Easy cascading application circuit.
handbook, halfpage
from RF
circuit
to IF circuit
or demodulator
MGU438
mixer
oscillator
wideband
amplifier
Fig.4 Application as IF amplifier.
handbook, halfpage
antenna
to IF circuit
or demodulator
MGU439
mixer
oscillator
LNA
wideband
amplifier
Fig.5 Application as RF amplifier.
handbook, halfpage
from modulation
or IF circuit
to power
amplifier
MGU440
mixer
oscillator
wideband
amplifier
Fig.6 Application as driver amplifier.
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