2002 Aug 06
2
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2771
FEATURES
Internally matched
Wide frequency range
Very flat gain
High output power
High linearity
Unconditionally stable.
APPLICATIONS
Cable systems
LNB IF amplifiers
General purpose
ISM.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN
DESCRIPTION
1
V
S
2, 5
GND2
3
RF out
4
GND1
6
RF in
MAM455
1
3
2
4
1
6
3
2, 5
4
5
6
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: G4-.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
S
DC supply voltage
3
4
V
I
S
DC supply current
33.3
-
mA
s
21
2
insertion power gain
f = 1 GHz
21.4
-
dB
NF
noise figure
f = 1 GHz
4.5
-
dB
P
L(sat)
saturated load power
f = 1 GHz
13.2
-
dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Aug 06
3
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2771
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
S
= 3 V; I
S
= 33 mA; f = 1 GHz; T
j
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S
DC supply voltage
RF input AC coupled
-
4
V
I
S
supply current
-
50
mA
P
tot
total power dissipation
T
s
80
C
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
150
C
P
D
maximum drive power
-
10
dBm
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to
solder point
P
tot
= 200 mW; T
s
80
C
300
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
S
supply current
29
33.3
45
mA
s
21
2
insertion power gain
f = 1 GHz
-
21.4
-
dB
f = 2 GHz
-
20.8
-
dB
R
L IN
return losses input
f = 1 GHz
-
17
-
dB
f = 2 GHz
-
13
-
dB
R
L OUT
return losses output
f = 1 GHz
-
9
-
dB
f = 2 GHz
-
9
-
dB
NF
noise figure
f = 1 GHz
-
4.5
-
dB
f = 2 GHz
-
4.7
-
dB
BW
bandwidth
at
s
21
2
-
3 dB below flat gain at 1 GHz
-
2.4
-
GHz
P
L(sat)
saturated load power
f = 1 GHz
-
13.2
-
dBm
f = 2 GHz
-
10.5
-
dBm
P
L 1 dB
load power
at 1 dB gain compression; f = 1 GHz
-
12.1
-
dBm
at 1 dB gain compression; f = 2 GHz
-
8.4
-
dBm
IP3
(in)
input intercept point
f = 1 GHz
-
0.5
-
dBm
f = 2 GHz
-
-
4.3
-
dBm
IP3
(out)
output intercept point
f = 1 GHz
-
21.9
-
dBm
f = 2 GHz
-
16.5
-
dBm
2002 Aug 06
4
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2771
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGA2771 MMIC. The device is internally matched to 50
,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2
and C3 should be not more than 100 pF for applications
above 100 MHz. However, when the device is operated
below 100 MHz, the capacitor value should be increased.
The nominal value of the RF choke L1 is 100 nH. At
frequencies below 100 MHz this value should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value must be used (e.g. 10 nH) to improve return
losses. For optimal results, a good quality chip inductor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.
Both the RF choke L1 and the 22 nF supply decoupling
capacitor C1 should be located as closely as possible to
the MMIC.
Separate paths must be used for the ground planes of the
ground pins GND1 and GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristics of the MMIC make
it and ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
In Fig.6 the MMIC is used as a driver to the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
handbook, halfpage
MGU436
RF out
RF in
C1
L1
C2
C3
GND2
GND1
Vs
Vs
RF input
RF output
Fig.2 Typical application circuit.
handbook, halfpage
DC-block
100 pF
DC-block
100 pF
DC-block
100 pF
input
output
MGU437
Fig.3 Simple cascade circuit.
handbook, halfpage
from RF
circuit
to IF circuit
or demodulator
MGU438
mixer
oscillator
wideband
amplifier
Fig.4 IF amplifier application.
handbook, halfpage
antenna
to IF circuit
or demodulator
MGU439
mixer
oscillator
LNA
wideband
amplifier
Fig.5 RF amplifier application.
handbook, halfpage
from modulation
or IF circuit
to power
amplifier
MGU440
mixer
oscillator
wideband
amplifier
Fig.6 Power amplifier driver application.
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