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Электронный компонент: BGD702N

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DATA SHEET
Product specification
Supersedes data of 2001 Oct 25
2001 Nov 02
DISCRETE SEMICONDUCTORS
BGD702N
750 MHz, 18.5 dB gain power
doubler amplifier
book, halfpage
M3D252
2001 Nov 02
2
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
BGD702N
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 750 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2
common
3
common
5
+V
B
7
common
8
common
9
output
Fig.1 Simplified outline.
handbook, halfpage
7
8
9
2
3
5
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 50 MHz
18
19
dB
f = 750 MHz
18.5
-
dB
I
tot
total current consumption (DC)
V
B
= 24 V
-
435
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
i
RF input voltage
-
65
dBmV
T
stg
storage temperature
-
40
+100
C
T
mb
operating mounting base temperature
-
20
+100
C
2001 Nov 02
3
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
BGD702N
CHARACTERISTICS
Table 1
Bandwidth 40 to 750 MHz; V
B
= 24 V; T
mb
= 35
C; Z
S
= Z
L
= 75
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 691.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 746.5 MHz.
2. Measured according to DIN45004B:
f
p
= 740.25 MHz; V
p
= V
o
;
f
q
= 747.25 MHz; V
q
= V
o
-
6 dB;
f
r
= 749.25 MHz; V
r
= V
o
-
6 dB;
measured at f
p
+ f
q
-
f
r
= 738.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 50 MHz
18
19
dB
f = 750 MHz
18.5
-
dB
SL
slope cable equivalent
f = 40 to 750 MHz
0.2
2
dB
FL
flatness of frequency response
f = 40 to 750 MHz
-
0.25
dB
S
11
input return losses
f = 40 to 80 MHz
20
-
dB
f = 80 to 160 MHz
19
-
dB
f = 160 to 320 MHz
18
-
dB
f = 320 to 640 MHz
17
-
dB
f = 640 to 750 MHz
16
-
dB
S
22
output return losses
f = 40 to 80 MHz
20
-
dB
f = 80 to 160 MHz
19
-
dB
f = 160 to 320 MHz
18
-
dB
f = 320 to 640 MHz
17
-
dB
f = 640 to 750 MHz
16
-
dB
S
21
phase response
f = 50 MHz
-
45
+45
deg
CTB
composite triple beat
110 channels flat; V
o
= 44 dBmV;
measured at 745.25 MHz
-
-
58
dB
X
mod
cross modulation
110 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
-
-
62
dB
CSO
composite second order
distortion
110 channels flat; V
o
= 44 dBmV;
measured at 746.5 MHz
-
-
58
dB
d
2
second order distortion
note 1
-
-
68
dB
V
o
output voltage
d
im
=
-
60 dB; note 2
61
-
dBmV
F
noise figure
f = 50 MHz
-
5.5
dB
f = 450 MHz
-
6.5
dB
f = 550 MHz
-
6.5
dB
f = 600 MHz
-
7
dB
f = 750 MHz
-
8.5
dB
I
tot
total current consumption (DC)
note 3
-
435
mA
2001 Nov 02
4
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
BGD702N
Table 2
Bandwidth 40 to 600 MHz; V
B
= 24 V; T
mb
= 35
C; Z
S
= Z
L
= 75
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 541.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 596.5 MHz.
2. Measured according to DIN45004B:
f
p
= 590.25 MHz; V
p
= V
o
;
f
q
= 597.25 MHz; V
q
= V
o
-
6 dB;
f
r
= 599.25 MHz; V
r
= V
o
-
6 dB;
measured at f
p
+ f
q
-
f
r
= 588.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 50 MHz
18
19
dB
f = 600 MHz
18.5
-
dB
SL
slope cable equivalent
f = 40 to 600 MHz
0.2
2
dB
FL
flatness of frequency response
f = 40 to 600 MHz
-
0.2
dB
S
11
input return losses
f = 40 to 80 MHz
20
-
dB
f = 80 to 160 MHz
19
-
dB
f = 160 to 320 MHz
18
-
dB
f = 320 to 600 MHz
17
-
dB
S
22
output return losses
f = 40 to 80 MHz
20
-
dB
f = 80 to 160 MHz
19
-
dB
f = 160 to 320 MHz
18
-
dB
f = 320 to 600 MHz
17
-
dB
S
21
phase response
f = 50 MHz
-
45
+45
deg
CTB
composite triple beat
85 channels flat;
V
o
= 44 dBmV;
measured at 595.25 MHz
-
-
65
dB
X
mod
cross modulation
85 channels flat;
V
o
= 44 dBmV;
measured at 55.25 MHz
-
-
65
dB
CSO
composite second order
distortion
85 channels flat;
V
o
= 44 dBmV;
measured at 596.5 MHz
-
-
60
dB
d
2
second order distortion
note 1
-
-
70
dB
V
o
output voltage
d
im
=
-
60 dB; note 2
64
-
dBmV
F
noise figure
see Table 1
-
-
dB
I
tot
total current consumption (DC)
note 3
-
435
mA
2001 Nov 02
5
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
BGD702N
Table 3
Bandwidth 40 to 550 MHz; V
B
= 24 V; T
mb
= 35
C; Z
S
= Z
L
= 75
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 493.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 548.5 MHz.
2. Measured according to DIN45004B:
f
p
= 540.25 MHz; V
p
= V
o
;
f
q
= 547.25 MHz; V
q
= V
o
-
6 dB;
f
r
= 549.25 MHz; V
r
= V
o
-
6 dB;
measured at f
p
+ f
q
-
f
r
= 538.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 50 MHz
18
19
dB
f = 550 MHz
18.5
-
dB
SL
slope cable equivalent
f = 40 to 550 MHz
0.2
2
dB
FL
flatness of frequency response
f = 40 to 550 MHz
-
0.2
dB
S
11
input return losses
f = 40 to 80 MHz
20
-
dB
f = 80 to 160 MHz
19
-
dB
f = 160 to 320 MHz
18
-
dB
f = 320 to 550 MHz
17
-
dB
S
22
output return losses
f = 40 to 80 MHz
20
-
dB
f = 80 to 160 MHz
19
-
dB
f = 160 to 320 MHz
18
-
dB
f = 320 to 550 MHz
17
-
dB
S
21
phase response
f = 50 MHz
-
45
+45
deg
CTB
composite triple beat
77 channels flat;
V
o
= 44 dBmV;
measured at 547.25 MHz
-
-
67
dB
X
mod
cross modulation
77 channels flat;
V
o
= 44 dBmV;
measured at 55.25 MHz
-
-
67
dB
CSO
composite second order
distortion
77 channels flat;
V
o
= 44 dBmV;
measured at 548.5 MHz
-
-
62
dB
d
2
second order distortion
note 1
-
-
72
dB
V
o
output voltage
d
im
=
-
60 dB; note 2
64.5
-
dBmV
F
noise figure
see Table 1
-
-
dB
I
tot
total current consumption (DC)
note 3
-
435
mA