1.
Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V.
1.2 Features
s
Excellent linearity
s
Extremely low noise
s
Excellent return loss properties
s
Silicon nitride passivation
s
Rugged construction
s
Gold metallization ensures excellent reliability
1.3 Applications
s
CATV systems operating in the 40 MHz to 900 MHz frequency range.
1.4 Quick reference data
[1]
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 35 V.
2.
Pinning information
BGD902
860 MHz, 18.5 dB gain power doubler amplifier
Rev. 07 -- 8 March 2005
Product data sheet
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
G
p
power gain
f = 50 MHz
18.2
18.5
18.8
dB
f = 900 MHz
19
19.5
20
dB
I
tot
total current consumption (DC)
[1]
405
420
435
mA
Table 2:
Pinning
Pin
Description
Simplified outline
Symbol
1
input
2, 3
common
5
+V
B
7, 8
common
9
output
7
8
9
2
3
5
1
Side view
msa319
2 3 7 8
5
9
1
sym095
9397 750 14435
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 07 -- 8 March 2005
2 of 10
Philips Semiconductors
BGD902
860 MHz, 18.5 dB gain power doubler amplifier
3.
Ordering information
4.
Limiting values
5.
Characteristics
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BGD902
-
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2
6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
B
supply voltage
-
30
V
V
i
RF input voltage
-
70
dBmV
T
stg
storage temperature
-
40
+100
C
T
mb
mounting base temperature
-
20
+100
C
Table 5:
Characteristics
Bandwidth 40 MHz to 900 MHz; V
B
= 24 V; T
mb
= 35
C; Z
S
= Z
L
= 75
.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
G
p
power gain
f = 50 MHz
18.2
18.5
18.8
dB
f = 900 MHz
19
19.5
20
dB
SL
slope cable
equivalent
f = 40 MHz to 900 MHz
0.4
0.9
1.4
dB
FL
flatness of
frequency
response
f = 40 MHz to 900 MHz
-
0.15
0.3
dB
s
11
input return
losses
f = 40 MHz to 80 MHz
21
24
-
dB
f = 80 MHz to 160 MHz
22
26
-
dB
f = 160 MHz to 320 MHz
22
28
-
dB
f = 320 MHz to 640 MHz
19
22
-
dB
f = 640 MHz to 900 MHz
18
21
-
dB
s
22
output return
losses
f = 40 MHz to 80 MHz
25
32
-
dB
f = 80 MHz to 160 MHz
25
33
-
dB
f = 160 MHz to 320 MHz
21
29
-
dB
f = 320 MHz to 750 MHz
20
25
-
dB
f = 750 MHz to 900 MHz
19
22
-
dB
s
21
phase response
f = 50 MHz
-
45
-
+45
deg
9397 750 14435
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 07 -- 8 March 2005
3 of 10
Philips Semiconductors
BGD902
860 MHz, 18.5 dB gain power doubler amplifier
[1]
Tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at
-
6 dB offset (550 MHz to 750 MHz).
[2]
Tilt = 12.5 dB (50 MHz to 860 MHz).
CTB
composite triple
beat
49 chs flat; V
o
= 47 dBmV; f
m
= 859.25 MHz
-
-
68.5
-
67
dB
77 chs flat; V
o
= 44 dBmV; f
m
= 547.25 MHz
-
-
70
-
68
dB
110 chs flat; V
o
= 44 dBmV; f
m
= 745.25 MHz
-
-
63.5
-
62
dB
129 chs flat; V
o
= 44 dBmV; f
m
= 859.25 MHz
-
-
60
-
58
dB
110 chs; f
m
= 400 MHz; V
o
= 49 dBmV at
550 MHz
[1]
-
-
64
-
62
dB
129 chs; f
m
= 650 MHz; V
o
= 49.5 dBmV at
860 MHz
[2]
-
-
58.5
-
56.5
dB
X
mod
cross modulation 49 chs flat; V
o
= 47 dBmV; f
m
= 55.25 MHz
-
-
66.5
-
64
dB
77 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
-
-
69.5
-
67
dB
110 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
-
-
66
-
63.5
dB
129 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
-
-
64.5
-
62
dB
110 chs; f
m
= 400 MHz; V
o
= 49 dBmV at
550 MHz
[1]
-
-
63
-
60
dB
129 chs; f
m
= 860 MHz; V
o
= 49.5 dBmV at
860 MHz
[2]
-
-
61
-
58
dB
CSO
composite
second order
distortion
49 chs flat; V
o
= 47 dBmV; f
m
= 860.5 MHz
-
-
65
-
62
dB
77 chs flat; V
o
= 44 dBmV; f
m
= 548.5 MHz
-
-
72
-
67
dB
110 chs flat; V
o
= 44 dBmV; f
m
= 746.5 MHz
-
-
65
-
60
dB
129 chs flat; V
o
= 44 dBmV; f
m
= 860.5 MHz
-
-
61
-
58
dB
110 chs; f
m
= 250 MHz; V
o
= 49 dBmV at
550 MHz
[1]
-
-
67
-
63
dB
129 chs; f
m
= 250 MHz; V
o
= 49.5 dBmV at
860 MHz
[2]
-
-
62
-
58
dB
IMD2
second order
distortion
[3]
-
-
80
-
74
dB
[4]
-
-
83
-
77
dB
[5]
-
-
84
-
78
dB
V
o
output voltage
IMD =
-
60 dB
[6]
64.5
66
-
dBmV
[7]
65.5
67
-
dBmV
[8]
67.5
69
-
dBmV
CTB compression = 1 dB; 129 chs flat;
f = 859.25 MHz
48.5
49.5
-
dBmV
CSO compression = 1 dB; 129 chs flat;
f = 860.5 MHz
50
53
-
dBmV
F
noise figure
f = 50 MHz
-
4.5
5
dB
f = 550 MHz
-
5
5.5
dB
f = 750 MHz
-
5.5
6.5
dB
f = 900 MHz
-
6.5
8
dB
I
tot
total current
consumption
(DC)
[9]
405
420
435
mA
Table 5:
Characteristics
...continued
Bandwidth 40 MHz to 900 MHz; V
B
= 24 V; T
mb
= 35
C; Z
S
= Z
L
= 75
.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
9397 750 14435
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 07 -- 8 March 2005
4 of 10
Philips Semiconductors
BGD902
860 MHz, 18.5 dB gain power doubler amplifier
[3]
f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 805.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 860.5 MHz.
[4]
f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 691.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 746.5 MHz.
[5]
f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 493.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 548.5 MHz.
[6]
Measured according to DIN45004B: f
p
= 851.25 MHz; V
p
= V
o
; f
q
= 858.25 MHz; V
q
= V
o
-
6 dB; f
r
= 860.25 MHz; V
r
= V
o
-
6 dB;
measured at f
p
+ f
q
-
f
r
= 849.25 MHz.
[7]
Measured according to DIN45004B: f
p
= 740.25 MHz; V
p
= V
o
; f
q
= 747.25 MHz; V
q
= V
o
-
6 dB; f
r
= 749.25 MHz; V
r
= V
o
-
6 dB;
measured at f
p
+ f
q
-
f
r
= 738.25 MHz.
[8]
Measured according to DIN45004B: f
p
= 540.25 MHz; V
p
= V
o
; f
q
= 547.25 MHz; V
q
= V
o
-
6 dB; f
r
= 549.25 MHz; V
r
= V
o
-
6 dB;
measured at f
p
+ f
q
-
f
r
= 538.25 MHz.
[9]
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 35 V.
Z
S
= Z
L
= 75
; V
B
= 24 V; 110 chs; tilt = 9 dB
(50 MHz to 550 MHz); tilt = 3.5 dB at
-
6 dB offset
(550 MHz to 750 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
Z
S
= Z
L
= 75
; V
B
= 24 V; 110 chs; tilt = 9 dB
(50 MHz to 550 MHz); tilt = 3.5 dB at
-
6 dB offset
(550 MHz to 750 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
Fig 1.
Composite triple beat as a function of
frequency under tilted conditions
Fig 2.
Cross modulation as a function of frequency
under tilted conditions
0
f (MHz)
CTB
(dB)
200
1000
-
50
-
60
-
80
-
90
-
70
52
48
40
36
44
400
600
800
mda980
(1)
(1)
(2)
(3)
(4)
(2)
(3)
(4)
V
o
(dBmV)
0
V
o
(dBmV)
f (MHz)
X
mod
(dB)
200
1000
-
50
-
60
-
80
-
90
-
70
52
48
40
36
44
400
600
800
mda981
(1)
(1)
(2)
(3)
(4)
9397 750 14435
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 07 -- 8 March 2005
5 of 10
Philips Semiconductors
BGD902
860 MHz, 18.5 dB gain power doubler amplifier
Z
S
= Z
L
= 75
; V
B
= 24 V; 110 chs; tilt = 9 dB
(50 MHz to 550 MHz); tilt = 3.5 dB at
-
6 dB offset
(550 MHz to 750 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
Z
S
= Z
L
= 75
; V
B
= 24 V; 129 chs; tilt = 12.5 dB
(50 MHz to 860 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
Fig 3.
Composite second order distortion as a
function of frequency under tilted conditions
Fig 4.
Composite triple beat as a function of
frequency under tilted conditions
0
V
o
(dBmV)
f (MHz)
CSO
(dB)
200
1000
-
50
-
60
-
80
-
90
-
70
52
48
40
36
44
400
600
800
mda982
(1)
(2)
(3)
(4)
(2)
(3)
(1)
(4)
0
f (MHz)
CTB
(dB)
200
1000
-
50
-
60
-
80
-
90
-
70
52
48
40
36
44
400
600
800
mda942
V
o
(dBmV)
(1)
(2)
(3)
(4)
PDF 
ZIP