ChipFind - документация

Электронный компонент: BGY787

Скачать:  PDF   ZIP

Document Outline

1.
Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package operating with a voltage supply of
24 V (DC).
1.2 Features
s
Extremely low noise
s
Silicon nitride passivation
s
Rugged construction
s
Gold metallization ensures excellent reliability
s
Excellent linearity
1.3 Applications
s
CATV systems operating in the frequency range of 40 MHz to 750 MHz
1.4 Quick reference data
[1]
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
BGY787
750 MHz, 21.5 dB gain push-pull
Rev. 08 -- 1 April 2005
Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
G
p
power gain
f = 50 MHz
21
21.5
22
dB
f = 750 MHz
21.5
22.5
-
dB
I
tot
total current consumption (DC)
V
B
= 24 V
[1]
-
220
240
mA
9397 750 14773
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 1 April 2005
2 of 11
Philips Semiconductors
BGY787
750 MHz, 21.5 dB gain push-pull amplifier
2.
Pinning information
3.
Ordering information
4.
Limiting values
Table 2:
Pinning
Pin
Description
Simplified outline
Symbol
1
input
2
common
3
common
5
+V
B
7
common
8
common
9
output
9
1 3 5 7
2 3 7 8
5
9
1
sym095
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BGY787
-
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2
6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
i
RF input voltage
-
60
dBmV
T
stg
storage temperature
-
40
+100
C
T
mb
mounting base temperature
-
20
+100
C
9397 750 14773
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 1 April 2005
3 of 11
Philips Semiconductors
BGY787
750 MHz, 21.5 dB gain push-pull amplifier
5.
Characteristics
[1]
f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 691.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 746.5 MHz.
[2]
Measure according to DIN45004B;
f
p
= 740.25 MHz; V
p
= V
o
; f
q
= 747.25 MHz; V
q
= V
o
-
6 dB; f
r
= 749.25 MHz; V
r
= V
o
-
6 dB; measured at f
p
+ f
q
-
f
r
= 738.25 MHz.
[3]
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
Table 5:
Characteristics at bandwidth 40 MHz to 750 MHz
V
B
= 24 V; T
case
= 30
C; Z
S
= Z
L
= 75
.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
G
p
power gain
f = 50 MHz
21
21.5
22
dB
f = 750 MHz
21.5
22.5
-
dB
SL
slope cable equivalent
f = 40 MHz to 750 MHz
0
1
1.5
dB
FL
flatness of frequency response
f = 40 MHz to 750 MHz
-
0.2
0.5
dB
s
11
input return losses
f = 40 MHz to 80 MHz
20
33
-
dB
f = 80 MHz to 160 MHz
18.5
30
-
dB
f = 160 MHz to 320 MHz
17
25
-
dB
f = 320 MHz to 640 MHz
15.5
22
-
dB
f = 640 MHz to 750 MHz
14
20.5
-
dB
s
22
output return losses
f = 40 MHz to 80 MHz
20
28.5
-
dB
f = 80 MHz to 160 MHz
18.5
27.5
-
dB
f = 160 MHz to 320 MHz
17
25
-
dB
f = 320 MHz to 640 MHz
15.5
22
-
dB
f = 640 MHz to 750 MHz
14
20
-
dB
S21
phase response
f = 50 MHz
-
45
-
+45
deg
CTB
composite triple beat
110 channels flat; V
o
= 44 dBmV;
measured at 745.25 MHz
-
-
54.5
-
53
dB
X
mod
cross modulation
110 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
-
-
54
-
52
dB
CSO
composite second order distortion 110 channels flat; V
o
= 44 dBmV;
measured at 746.5 MHz
-
-
57.5
-
53
dB
d
2
second order distortion
[1]
-
-
75
-
63
dB
V
o
output voltage
d
im
=
-
60 dB
[2]
61
63
-
dBmV
F
noise figure
f = 50 MHz
-
4
5
dB
f = 450 MHz
-
-
5.5
dB
f = 550 MHz
-
-
5.5
dB
f = 600 MHz
-
-
6
dB
f = 750 MHz
-
5
6.5
dB
I
tot
total current consumption (DC)
[3]
-
220
240
mA
9397 750 14773
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 1 April 2005
4 of 11
Philips Semiconductors
BGY787
750 MHz, 21.5 dB gain push-pull amplifier
[1]
f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 691.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 746.5 MHz.
[2]
Measure according to DIN45004B;
f
p
= 740.25 MHz; V
p
= V
o
; f
q
= 747.25 MHz; V
q
= V
o
-
6 dB; f
r
= 749.25 MHz; V
r
= V
o
-
6 dB; measured at f
p
+ f
q
-
f
r
= 738.25 MHz.
[3]
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
Table 6:
Characteristics at bandwidth 40 MHz to 770 MHz
V
B
= 24 V; T
case
= 30
C; Z
S
= Z
L
= 75
.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
G
p
power gain
f = 50 MHz
21
21.5
22
dB
f = 770 MHz
21.5
22.5
-
dB
SL
slope cable equivalent
f = 40 MHz to 770 MHz
0
1
1.5
dB
FL
flatness of frequency response f = 40 MHz to 770 MHz
-
0.2
0.5
dB
s
11
input return losses
f = 40 MHz to 80 MHz
20
33
-
dB
f = 80 MHz to 160 MHz
18.5
30
-
dB
f = 160 MHz to 320 MHz
17
25
-
dB
f = 320 MHz to 640 MHz
15.5
22.5
-
dB
f = 640 MHz to 770 MHz
14
20.5
-
dB
s
22
output return losses
f = 40 MHz to 80 MHz
20
28.5
-
dB
f = 80 MHz to 160 MHz
18.5
27.5
-
dB
f = 160 MHz to 320 MHz
17
25
-
dB
f = 320 MHz to 640 MHz
15.5
22
-
dB
f = 640 MHz to 770 MHz
14
20
-
dB
S21
phase response
f = 50 MHz
-
45
-
+45
deg
CTB
composite triple beat
110 channels flat; V
o
= 44 dBmV; measured
at 745.25 MHz
-
-
54.5
-
53
dB
X
mod
cross modulation
110 channels flat; V
o
= 44 dBmV; measured
at 55.25 MHz
-
-
54
-
52
dB
CSO
composite second order
distortion
110 channels flat; V
o
= 44 dBmV; measured
at 746.5 MHz
-
-
57.5
-
53
dB
d
2
second order distortion
[1]
-
-
75
-
63
dB
V
o
output voltage
d
im
=
-
60 dB
[2]
61
63
-
dBmV
F
noise figure
f = 50 MHz
-
4
5
dB
f = 450 MHz
-
-
5.5
dB
f = 550 MHz
-
-
5.5
dB
f = 600 MHz
-
-
6
dB
f = 770 MHz
-
5
6.5
dB
I
tot
total current consumption (DC)
[3]
-
220
240
mA
9397 750 14773
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 1 April 2005
5 of 11
Philips Semiconductors
BGY787
750 MHz, 21.5 dB gain push-pull amplifier
[1]
f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 541.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 596.5 MHz.
[2]
Measure according to DIN45004B;
f
p
= 590.25 MHz; V
p
= V
o
; f
q
= 597.25 MHz; V
q
= V
o
-
6 dB; f
r
= 599.25 MHz; V
r
= V
o
-
6 dB; measured at f
p
+ f
q
-
f
r
= 588.25 MHz.
[3]
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
Table 7:
Characteristics at bandwidth 40 MHz to 600 MHz
V
B
= 24 V; T
case
= 30
C; Z
S
= Z
L
= 75
.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
G
p
power gain
f = 50 MHz
21
21.5
22
dB
f = 600 MHz
21.5
-
-
dB
SL
slope cable equivalent
f = 40 MHz to 600 MHz
0
-
1.5
dB
FL
flatness of frequency response f = 40 MHz to 600 MHz
-
-
0.3 dB
s
11
input return losses
f = 40 MHz to 80 MHz
20
33
-
dB
f = 80 MHz to 160 MHz
18.5
30
-
dB
f = 160 MHz to 320 MHz
17
25
-
dB
f = 320 MHz to 600 MHz
16
22.5
-
dB
s
22
output return losses
f = 40 MHz to 80 MHz;
20
28.5
-
dB
f = 80 MHz to 160 MHz
18.5
27.5
-
dB
f = 160 MHz to 320 MHz
17
25
-
dB
f = 320 MHz to 600 MHz
16
22
-
dB
S21
phase response
f = 50 MHz
-
45
-
+45
deg
CTB
composite triple beat
85 channels flat; V
o
= 44 dBmV; measured at
595.25 MHz
-
-
59.5
-
58
dB
X
mod
cross modulation
85 channels flat; V
o
= 44 dBmV; measured at
55.25 MHz
-
-
55.5
-
53
dB
CSO
composite second order
distortion
85 channels flat; V
o
= 44 dBmV; measured at
596.5 MHz
-
-
64
-
56
dB
d
2
second order distortion
[1]
-
-
-
68
dB
V
o
output voltage
d
im
=
-
60 dB
[2]
62.5
-
-
dBmV
F
noise figure
see
Table 5
-
-
-
dB
I
tot
total current consumption (DC)
[3]
-
220
240
mA