Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING - SOT502A
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- APPLICATION INFORMATION
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Product specification
Supersedes data of 2001 Dec 05
2003 May 14
DISCRETE SEMICONDUCTORS
BLF1049
Base station LDMOS transistor
dbook, halfpage
M3D379
2003 May 14
2
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
FEATURES
Typical performance at a supply voltage of 27 V:
1-tone CW; I
DQ
= 1000 mA
Output power = 125 W
Gain = 16.5 dB
Efficiency = 54%
EDGE output power = 45 W (AV)
ACPR400 =
-
64 dBc at 400 kHz
(EDGE; I
DQ
= 750 mA)
EVM = 2% rms (AV)
(EDGE; I
DQ
= 750 mA)
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (800 to 1000 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifier for GSM, EDGE and CDMA base
stations and multicarrier applications in the
800 to 1000 MHz frequency range.
DESCRIPTION
125 W LDMOS power transistor for base station
applications at frequencies from 800 MHz to 1000 MHz.
PINNING - SOT502A
PIN
DESCRIPTION
1
drain
2
gate
3
source; connected to flange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline SOT502A .
QUICK REFERENCE DATA
Typical RF performance at T
h
= 25
C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION
f
(MHz)
P
L
(W)
G
p
(dB)
D
(%)
d
3
(dBc)
ACPR 400
(dBc)
EVM
% rms
(AV)
2-tone
920
125 (PEP)
15.5
37
-
32
-
-
1-tone CW
125
16.5
54
-
-
-
GSM EDGE
45 (AV)
15
32
-
-
64
2
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
75
V
V
GS
gate-source voltage
-
15
V
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
200
C
2003 May 14
3
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
THERMAL CHARACTERISTICS
Notes
1. Thermal resistance is determined under RF operating conditions.
2. Depending on mounting condition in application.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit; V
DS
= 27 V; T
h
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-c
thermal resistance from junction to case
T
h
= 25
C, P
L
= 35 W (AV), note 1
0.42
K/W
R
th j-h
thermal resistance from junction to heatsink
T
h
= 25
C, P
L
= 35 W (AV), note 2
0.62
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0; I
D
= 3 mA
75
-
-
V
V
GSth
gate-source threshold voltage
V
DS
= 10 V; I
D
= 300 mA
4
-
5
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 36 V
-
-
3
A
I
DSX
on-state drain current
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
45
-
-
A
I
GSS
gate leakage current
V
GS
=
20 V; V
DS
= 0
-
-
1
A
g
fs
forward transconductance
V
DS
= 10 V; I
D
= 10 A
-
9
-
S
R
DSon
drain-source on-state resistance
V
GS
= 9 V; I
D
= 10 A
-
60
-
m
Mode of operation: 2-tone CW, 100 kHz spacing; I
DQ
= 1130 mA; f = 890 MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
gain power
P
L
= 125 W (PEP)
14.6
15.5
-
dB
D
drain efficiency
33
37
-
%
IRL
input return loss
-
-
12
-
6
dB
d
3
third order inter modulation
distortion
-
-
32
-
25
dBc
Mode of operation: GSM EDGE; I
DQ
= 750 mA; f = 920 MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
gain power
P
L
= 45 W (AV)
-
15
-
dB
D
drain efficiency
-
32
-
%
ACPR 400
adjacent channel power ratio
-
-
64
-
dBc
EVM (AV)
EVM rms average signal distortion
-
2
-
%
EVM peak
EVM rms peak signal distortion
-
2.2
-
%
Mode of operation: 1-tone CW; I
DQ
= 1000 mA; f = 920 MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
gain power
P
L
= P
L 1 dB
= 125 W
-
16.5
-
dB
D
drain efficiency
-
54
-
%
2003 May 14
4
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
handbook, halfpage
0
10
Gp
(dB)
50
16
15
13
12
14
20
30
40
MLE061
D
(%)
D
Gp
40
30
10
0
20
PL (AV)(W)
Fig.2
GSM EDGE power gain and efficiency as
functions of load power; typical values.
V
DS
= 27 V; f = 920 MHz; I
DQ
= 750 mA; T
h
25
C.
handbook, halfpage
0
10
PL (AV)(W)
50
-
62
-
64
-
68
-
70
-
66
20
30
40
MLE062
EVMrms
(AV)
(%)
ACPR
400
(dBc)
2
1.5
0.5
0
1
EVM
ACPR400
Fig.3
GSM EDGE ACPR400 and EVM as
functions of average load power; typical
values.
V
DS
= 27 V; f = 920 MHz; I
DQ
= 750 mA; T
h
25
C.
handbook, halfpage
0
50
100
150
MLE063
PL (AV) (W)
18
17
16
15
Gp
(dB)
D
(%)
Gp
D
60
20
40
0
Fig.4
1-tone CW power gain and efficiency as
functions of load power; typical values.
V
DS
= 27 V; f = 920 MHz; I
DQ
= 1000 mA;
handbook, halfpage
0
50
100
150
50
0
40
30
20
10
17
14
16.5
16
15.5
14.5
15
MLE064
gain
(dB)
PL (PEP) (W)
(%)
(4)
(1,2,3)
(5)
(6)
Fig.5
2-tone power gain and efficiency as
functions of load power at different
temperatures.
V
DS
= 27 V; I
DQ
= 1.1 A; f
1
= 920.0 MHz; f
2
= 920.1 MHz.
(1)
at T
h
=
-
40
C.
(2)
at T
h
= 20
C.
(3)
at T
h
= 80
C.
(4) gain at T
h
=
-
40
C.
(5) gain at T
h
= 20
C.
(6) gain at T
h
= 80
C.
2003 May 14
5
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
handbook, halfpage
0
50
100
150
-
20
-
30
-
50
-
60
-
40
MLE065
(3)
(2)
(1)
PL (PEP) (W)
d3
(dBc)
Fig.6
Third order intermodulation distortion as a
function of load power at different
temperatures.
(1) T
h
=
-
40
C.
(2) T
h
= 20
C.
(3) T
h
= 80
C.
V
DS
= 27 V; I
DQ
= 1.1 A; f
1
= 920.0 MHz; f
2
= 920.1 MHz.
handbook, halfpage
0
50
100
150
-
30
-
40
-
60
-
70
-
50
MLE066
(1)
(3)
(2)
PL (PEP) (W)
d5
(dBc)
Fig.7
Fifth order intermodulation distortion as a
function of load power at different
temperatures.
(1) T
h
=
-
40
C.
(2) T
h
= 20
C.
(3) T
h
= 80
C.
V
DS
= 27 V; I
DQ
= 1.1 A; f
1
= 920.0 MHz; f
2
= 920.1 MHz.
handbook, halfpage
0
-
40
-
50
-
60
-
70
50
100
150
MLE067
(1)
(2)
(3)
PL (PEP) (W)
d7
(dBc)
Fig.8
Seventh order intermodulation distortion as
a function of load power at different
temperatures.
(1) T
h
=
-
40
C.
(2) T
h
= 20
C.
(3) T
h
= 80
C.
V
DS
= 27 V; I
DQ
= 1.1 A; f
1
= 920.0 MHz;
handbook, halfpage
0
50
100
150
20
15
5
0
10
40
30
10
0
20
MLE068
gain
(dB)
PL (PEP) (W)
D
(%)
(2)
(3)
(4)
(1)
Fig.9
Power gain and drain efficiency as functions
of peak envelope load power;
typical values.
V
DS
= 27 V; f
1
= 920.0 MHz; f
2
= 920.1 MHz.
(1) I
DQ
= 1 A.
(2) I
DQ
= 1.45 A.
(3) I
DQ
= 1 A.
(4) I
DQ
= 1.45 A.
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