DATA SHEET
Product specification
File under Discrete Semiconductors, SC08a
September 1992
DISCRETE SEMICONDUCTORS
BLF177
HF/VHF power MOS transistor
September 1992
2
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
FEATURES
High power gain
Low intermodulation distortion
Easy power control
Good thermal stability
Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for industrial and military
applications in the HF/VHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT121 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
A marking code, showing gate-source
voltage (V
GS
) information is provided
for matched pair applications. Refer
to the 'General' section for further
information.
PINNING - SOT121
PIN
DESCRIPTION
1
drain
2
source
3
gate
4
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
andbook, halfpage
MLA876
1
4
3
2
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at T
h
= 25
C in a common source test circuit.
MODE OF
OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
P
(dB)
D
(%)
d
3
(dB)
d
5
(dB)
SSB class-AB
28
50
150 (PEP)
>
20
>
35
< -
30
< -
30
CW class-B
108
50
150
typ. 19
typ. 70
-
-
September 1992
3
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
110
V
V
GS
gate-source voltage
-
20
V
I
D
DC drain current
-
16
A
P
tot
total power dissipation
up to T
mb
= 25
C
-
220
W
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
200
C
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-mb
thermal resistance from junction to mounting base
max. 0.8 K/W
R
th mb-h
thermal resistance from mounting base to heatsink
max. 0.2 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by R
DS(on)
.
(2) T
mb
= 25
C.
handbook, halfpage
10
2
10
1
10
-
1
MRA906
1
10
VDS (V)
ID
(A)
10
2
10
3
(1)
(2)
Fig.3 Power/temperature derating curves.
(1) Short-time operation during mismatch.
(2) Continuous operation.
handbook, halfpage
0
300
200
100
0
50
(2)
(1)
100
150
MGP089
Ptot
(W)
Th (
C)
September 1992
4
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage
I
D
= 50 mA; V
GS
= 0
110
-
-
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 50 V
-
-
2.5
mA
I
GSS
gate-source leakage current
V
GS
= 20 V; V
DS
= 0
-
-
1
A
V
GS(th)
gate-source threshold voltage
I
D
= 50 mA; V
DS
= 10 V
2
-
4.5
V
V
GS
gate-source voltage difference of
matched pairs
I
D
= 50 mA; V
DS
= 10 V
-
-
100
mV
g
fs
forward transconductance
I
D
= 5 A; V
DS
= 10 V
4.5
6.2
-
S
R
DS(on)
drain-source on-state resistance
I
D
= 5 A; V
GS
= 10 V
-
0.2
0.3
I
DSX
on-state drain current
V
GS
= 10 V; V
DS
= 10 V
-
25
-
A
C
is
input capacitance
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
-
480
-
pF
C
os
output capacitance
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
-
190
-
pF
C
rs
feedback capacitance
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
-
14
-
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
V
DS
= 10 V; valid for T
h
= 25 to 70
C.
handbook, halfpage
0
-
5
MGP090
10
-
1
1
10
10
-
2
-
4
-
3
-
2
-
1
ID (A)
T.C.
(mV/K)
Fig.5
Drain current as a function of gate-source
voltage, typical values.
V
DS
= 10 V.
handbook, halfpage
0
30
20
10
0
5
10
15
MGP091
ID
(A)
VGS (V)
September 1992
5
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values.
I
D
= 5 A; V
GS
= 10 V.
handbook, halfpage
0
400
300
200
100
50
100
150
MGP092
RDS(on)
(m
)
Tj (
C)
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
1200
800
400
0
20
40
Cis
Cos
60
VDS (V)
C
(pF)
MBK408
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
300
200
100
0
10
50
20
30
40
MGP093
Crs
(pF)
VDS (V)
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