DATA SHEET
Product specification
September 1992
DISCRETE SEMICONDUCTORS
BLF248
VHF push-pull power MOS
transistor
September 1992
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for large signal
amplifier applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead SOT262 A1 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT262 A1
PIN
DESCRIPTION
1
drain 1
2
drain 2
3
gate 1
4
gate 2
5
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
halfpage
1
2
3
4
MSB008
Top view
5
5
MBB157
g2
g1
d2
d1
s
QUICK REFERENCE DATA
RF performance at T
h
= 25
C in a push-pull common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
P
(dB)
D
(%)
class-AB
225
28
300
>
10
>
55
175
28
300
typ. 13
typ. 67
September 1992
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
65
V
V
GS
gate-source voltage
-
20
V
I
D
DC drain current
-
25
A
P
tot
total power dissipation
up to T
mb
= 25
C total device;
both sections equally loaded
-
500
W
T
stg
storage temperature
-
65
150
C
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
R
th j-mb
thermal resistance from
junction to mounting base
total device; both sections
equally loaded.
0.35 K/W
R
th mb-h
thermal resistance from
mounting base to heatsink
total device; both sections
equally loaded.
0.15 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by R
DS(on)
.
(2) T
mb
= 25
C.
Total device; both sections equally loaded.
handbook, halfpage
1
10
10
2
1
10
VDS (V)
ID
(A)
10
2
(1)
MRA933
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
handbook, halfpage
0
50
100
150
600
0
200
400
MGP203
Th (
C)
Ptot
(W)
(2)
(1)
September 1992
4
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
CHARACTERISTICS (per section)
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0; I
D
= 100 mA
65
-
-
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 28 V
-
-
5
mA
I
GSS
gate-source leakage current
V
GS
= 20 V; V
DS
= 0
-
-
1
A
V
GS(th)
gate-source threshold voltage
I
D
= 100 mA; V
DS
= 10 V
2
-
4.5
V
V
GS
gate-source voltage difference
of both transistor sections
I
D
= 100 mA; V
DS
= 10 V
-
-
100
mV
g
fs
forward transconductance
I
D
= 8 A; V
DS
= 10 V
5
7.5
-
S
g
fs1
/g
fs2
forward transconductance ratio
of both transistor sections
I
D
= 8 A; V
DS
= 10 V
0.9
-
1.1
R
DS(on)
drain-source on-state resistance
I
D
= 8 A; V
GS
= 10 V
-
0.1
0.15
I
DSX
on-state drain current
V
GS
= 10 V; V
DS
= 10 V
-
37
-
A
C
is
input capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
500
-
pF
C
os
output capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
360
-
pF
C
rs
feedback capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
46
-
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
V
DS
= 10 V.
handbook, halfpage
0
-
5
MGP204
10
-
1
1
10
-
4
-
3
-
2
-
1
ID (A)
T.C.
(mV/K)
Fig.5
Drain current as a function of gate-source
voltage, typical values per section.
V
DS
= 10 V; T
j
= 25
C.
handbook, halfpage
0
5
10
20
60
20
0
40
MGP205
15
ID
(A)
VGS (V)
September 1992
5
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
I
D
= 8 A; V
GS
= 10 V.
handbook, halfpage
0
50
100
150
200
0
100
MGP206
RDS(on)
(m
)
Tj (
C)
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values per
section.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
10
20
40
1500
500
0
1000
MGP207
30
C
(pF)
Cis
Cos
VDS (V)
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values per
section.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
10
20
40
600
200
0
400
MGP208
30
Crs
(pF)
VDS (V)
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