1996 Oct 02
2
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF346
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures excellent reliability.
APPLICATIONS
Linear amplifier applications in Television transmitters
and transposers.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 6-lead, SOT119 flange
package, with a ceramic cap. All leads are isolated from
the flange. A marking code, showing gate-source voltage
(V
GS
) information is provided for matched pair
applications. Refer to the General Section of Data
Handbook SC19a for further information.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING-SOT119
PIN
SYMBOL
DESCRIPTION
1
s
source
2
s
source
3
g
gate
4
d
drain
5
s
source
6
s
source
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
MAM268
2
4
6
5
3
1
QUICK REFERENCE DATA
RF performance in a linear amplifier.
Note
1. Three-tone test method (vision carrier
-
8 dB, sound carrier
-
7 dB, sideband signal
-
16 dB), zero dB corresponds to
peak synchronization level.
MODE OF
OPERATION
f
(MHz)
V
DS
(V)
I
D
(A)
T
h
(
C)
P
L
(W)
G
P
(dB)
d
im
(dB)
(1)
Class-A
224.25
28
3
70
>24
>14
-
52
25
typ. 30
typ. 16.5
-
52
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 02
3
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF346
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
drain-source voltage
-
65
V
V
GSS
gate-source voltage
-
20
V
I
D
DC drain current
-
13
A
P
tot
total power dissipation
up to T
mb
= 25
C
-
130
W
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
200
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
thermal resistance from junction to
mounting base
T
mb
= 25
C; P
tot
= 130 W
1.35
K/W
R
th mb-h
thermal resistance from mounting
base to heatsink
T
mb
= 25
C; P
tot
= 130 W
0.2
K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by R
DSon.
(2) T
mb
= 25
C.
handbook, halfpage
10
-
1
10
2
1
10
1
10
(1)
50
ID
(A)
VDS (V)
MRA931
(2)
Fig.3 Power derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0
50
100
150
200
150
50
0
100
MGG104
Ptot
(W)
Th (
C)
(1)
(2)
1996 Oct 02
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF346
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0; I
D
= 50 mA
65
-
-
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 28 V
-
-
2.5
mA
I
GSS
gate-source leakage current
V
GS
=
20 V; V
DS
= 0
-
-
1
A
V
GSth
gate-source threshold voltage
V
DS
= 10 V; I
D
= 50 mA
2
-
4.5
V
V
GS
gate-source voltage difference
of matched pairs
V
DS
= 10 V; I
D
= 50 mA
-
-
100
mV
g
fs
forward transconductance
V
DS
= 10 V; I
D
= 5 A
3
4.2
-
S
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
= 5 A
-
0.2
0.3
I
DSX
on-state drain current
V
GS
= 10 V; V
DS
= 10 V
-
22
-
A
C
is
input capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
225
-
pF
C
os
output capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
180
-
pF
C
rs
feedback capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
25
-
pF
Fig.4
Temperature coefficient of gate-source voltage
as a function of drain current; typical values.
V
DS
= 10 V.
handbook, halfpage
2
-
6
-
2
0
-
4
MGG105
10
-
2
10
-
1
1
10
T.C.
(mV/K)
ID (A)
Fig.5
Drain current as a function of gate-source
voltage; typical values.
V
DS
= 10 V; T
j
= 25
C.
handbook, halfpage
0
5
10
20
40
30
10
0
20
15
MGG106
VGS (V)
ID
(A)
1996 Oct 02
5
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF346
Fig.6
Drain-source on-state resistance as a function
of junction temperature; typical values.
I
D
= 5 A; V
GS
= 10 V.
handbook, halfpage
0
340
280
220
160
30
150
MGG107
60
90
120
RDS on
(m
)
Tj (
C)
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values.
V
GS
= 0; f = 1 MHz.
0
200
400
600
800
0
10
20
30
40
C
(pF)
C is
C os
(V)
VDS
MRA930
Fig.8
Feedback capacitance as a function of
drain-source voltage; typical values.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
10
20
40
300
100
0
200
MGG108
30
VDS (V)
Crs
(pF)
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