DATA SHEET
Product specification
Supersedes data of 1996 Oct 17
1998 Jul 29
DISCRETE SEMICONDUCTORS
BLF378
VHF push-pull power MOS
transistor
M3D091
1998 Jul 29
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF378
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures excellent reliability.
APPLICATIONS
Broadcast transmitter applications in the VHF frequency
range.
DESCRIPTION
Dual push-pull silicon N-channel enhancement mode
vertical D-MOS transistor encapsulated in a 4-lead,
SOT262A1 balanced flange package with two ceramic
caps. The mounting flange provides the common source
connection for the transistors.
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
PINNING - SOT262A1
PIN
SYMBOL
DESCRIPTION
1
d
1
drain 1
2
d
2
drain 2
3
g
1
gate 1
4
g
2
gate 2
5
s
source
Fig.1 Simplified outline and symbol.
1
2
3
4
MAM098
Top view
5
5
d
g
s
d
g
QUICK REFERENCE DATA
RF performance at T
h
= 25
C in a push-pull common source test circuit.
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized
input / 25% synchronized output compression in television service (negative modulation, CCIR system).
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
G
p
(dB)
(1)
D
(%)
CW, class-AB
225
50
250
>14
<1
>50
typ. 16
typ. 0.6
typ. 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Jul 29
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF378
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section unless otherwise specified
V
DSS
drain-source voltage
-
110
V
V
GSS
gate-source voltage
-
20
V
I
D
drain current (DC)
-
18
A
P
tot
total power dissipation T
mb
25
C total device; both sections equally loaded
-
500
W
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
200
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
thermal resistance from junction to mounting base total device; both sections
equally loaded
0.35
K/W
R
th mb-h
thermal resistance from mounting base to heatsink total device; both sections
equally loaded
0.15
K/W
Fig.2 DC SOAR.
Total device; both sections equally loaded.
(1) Current is this area may be limited by R
DSon
.
(2) T
mb
= 25
C.
handbook, halfpage
1
10
100
1
10
100
(1)
500
I
D
(A)
V (V)
DS
MRA988
(2)
Fig.3 Power derating curves.
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0
40
80
160
500
0
400
MGE616
120
300
200
100
Ptot
(W)
Th (
C)
(2)
(1)
1998 Jul 29
4
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF378
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor section
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0; I
D
= 50 mA
110
-
-
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 50 V
-
-
2.5
mA
I
GSS
gate-source leakage current
V
GS
=
20 V; V
DS
= 0
-
-
1
A
V
GSth
gate-source threshold voltage
I
D
= 50 mA; V
DS
= 10 V
2.0
-
4.5
V
V
GS
gate-source voltage difference
of both transistor sections
I
D
= 50 mA; V
DS
= 10 V
-
-
100
mV
g
fs
forward transconductance
I
D
= 5 A; V
DS
= 10 V
4.5
6.2
-
S
g
fs1
/g
fs2
forward transconductance ratio
of both transistor sections
I
D
= 5 A; V
DS
= 10 V
0.9
-
1.1
R
DSon
drain-source on-state resistance I
D
= 5 A; V
GS
= 10 V
-
0.2
0.3
I
DSX
on-state drain current
V
GS
= 10 V; V
DS
= 10 V
-
25
-
A
C
is
input capacitance
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
-
480
-
pF
C
os
output capacitance
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
-
190
-
pF
C
rs
feedback capacitance
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
-
14
-
pF
C
d-f
drain-flange capacitance
-
5.4
-
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
V
DS
= 10 V.
handbook, halfpage
0
-
5
10
-
2
10
-
1
MGE623
1
10
-
4
-
3
-
2
-
1
T.C.
(mV/K)
ID (A)
Fig.5
Drain current as a function of gate-source
voltage; typical values per section.
V
DS
= 10 V; T
j
= 25
C.
handbook, halfpage
0
30
20
10
0
5
ID
(A)
10
VGS (V)
15
MGE622
1998 Jul 29
5
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF378
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
I
D
= 5 A; V
GS
= 10 V.
handbook, halfpage
0
50
100
150
400
0
200
100
300
MGE621
RDSon
(m
)
Tj (
C)
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
1200
800
400
0
20
C
(pF)
40
VDS (V)
60
MGE615
Cos
Cis
Fig.8
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
10
50
400
300
100
0
200
MGE620
20
30
40
Crs
(pF)
VDS (V)
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