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Электронный компонент: BLF542

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DATA SHEET
Product specification
October 1992
DISCRETE SEMICONDUCTORS
BLF542
UHF power MOS transistor
October 1992
2
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
FEATURES
High power gain
Easy power control
Gold metallization
Good thermal stability
Withstands full load mismatch
Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the UHF frequency
range.
The transistor is encapsulated in a
6-lead, SOT171 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
PINNING - SOT171
PIN
DESCRIPTION
1
source
2
source
3
gate
4
drain
5
source
6
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
halfpage
MBA931 - 1
1
3
5
2
4
6
Top view
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at T
mb
= 25
C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
P
(dB)
D
(%)
CW, class-B
500
28
5
>
13
>
50
October 1992
3
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
65
V
V
GS
gate-source voltage
-
20
V
I
D
DC drain current
-
1.5
A
P
tot
total power dissipation
T
mb
= 25
C
-
20
W
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
200
C
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-mb
thermal resistance from junction to mounting base
8.8 K/W
R
th mb-h
thermal resistance from mounting base to heatsink
0.4 K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by R
DS(on)
.
(2) T
mb
= 25
C.
handbook, halfpage
10
2
MRA735
10
1
10
1
10
-
1
10
-
2
VDS (V)
ID
(A)
(2)
(1)
Fig.3 Power derating curves.
(1) Continuous operation.
(2) Short time operation during mismatch.
handbook, halfpage
0
5
10
15
20
25
30
35
10
30
50
70
90
110
130
(1)
(2)
Ptot
(W)
Th (
o
C)
MRA734
October 1992
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage
I
D
= 0.1 mA; V
GS
= 0
65
-
-
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 28 V
-
-
10
A
I
GSS
gate-source leakage current
V
GS
= 20 V; V
DS
= 0
-
-
1
A
V
GS(th)
gate-source threshold voltage
I
D
= 10 mA; V
DS
= 10 V
2
-
4.5
V
g
fs
forward transconductance
I
D
= 0.3 A; V
DS
= 10 V
160
240
-
mS
R
DS(on)
drain-source on-resistance
I
D
= 0.3 A; V
GS
= 15 V
-
3.3
5
I
DSX
on-state drain current
V
GS
= 15 V; V
DS
= 10 V
-
1.4
-
A
C
is
input capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
14
-
pF
C
os
output capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
9.4
-
pF
C
rs
feedback capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
1.7
-
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
V
DS
= 10 V.
handbook, halfpage
0
100
200
300
4
2
2
4
0
MBB777
ID (mA)
T.C.
(mV/K)
Fig.5
Drain current as a function of gate-source
voltage, typical values.
V
DS
= 10 V; T
j
= 25
C.
handbook, halfpage
0
1.5
1
0.5
0
5
10
15
MBB759
VGS (V)
ID
(A)
October 1992
5
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
Fig.6
Drain-source on-resistance as a function of
junction temperature, typical values.
I
D
= 0.3 A; V
GS
= 15 V
handbook, halfpage
0
6
4
2
0
50
100
150
MBB778
Tj (
o
C)
RDS (on)
(
)
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
30
20
10
0
10
20
30
MBB776
VDS (V)
C
(pF)
Cis
Cos
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
6
4
2
0
10
20
30
MBB775
VDS (V)
Crs
(pF)