DATA SHEET
Product specification
October 1992
DISCRETE SEMICONDUCTORS
BLF546
UHF push-pull power MOS
transistor
October 1992
2
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability
Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT268 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT268
PIN
DESCRIPTION
1
drain 1
2
gate 1
3
gate 2
4
drain 2
5
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM395
1
2
4
3
5
Top view
d
g
s
d
g
QUICK REFERENCE DATA
RF performance at T
h
= 25
C in a push-pull common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
D
(%)
CW, class-B
500
28
80
>
11
>
50
October 1992
3
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
65
V
V
GS
gate-source voltage
-
20
V
I
D
DC drain current
-
9
A
P
tot
total power dissipation
up to T
mb
= 25
C; total device;
both sections equally loaded
-
145
W
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
200
C
SYMBOL
PARAMETER
CONDITIONS
THERMAL
RESISTANCE
R
th j-mb
thermal resistance from junction to
mounting base
total device; both sections equally
loaded
1.2 K/W
R
th mb-h
thermal resistance from mounting
base to heatsink
total device; both sections equally
loaded
0.25 K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by R
DS(on)
.
(2) T
mb
= 25
C.
Total device; both sections equally loaded.
handbook, halfpage
1
10
1
10
MRA995
10
2
10
2
(1)
ID
(A)
VDS (V)
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
handbook, halfpage
0
(1)
(2)
40
80
Ptot
(W)
Th (
C)
160
200
0
160
120
120
80
40
MDA519
October 1992
4
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
CHARACTERISTICS (per section)
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0; I
D
= 20 mA
65
-
-
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 28 V
-
-
2
mA
I
GSS
gate-source leakage current
V
GS
= 20 V; V
DS
= 0
-
-
1
A
V
GS(th)
gate-source threshold voltage
I
D
= 80 mA; V
DS
= 10 V
1
-
4
V
g
fs
forward transconductance
I
D
= 2.4 A; V
DS
= 10 V
1.2
1.7
-
S
R
DS(on)
drain-source on-state resistance
I
D
= 2.4 A; V
GS
= 10 V
-
0.4
0.6
I
DSX
on-state drain current
V
GS
= 15 V; V
DS
= 10 V
-
10
-
A
C
is
input capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
60
-
pF
C
os
output capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
46
-
pF
C
rs
feedback capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
15
-
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
V
DS
= 10 V.
handbook, halfpage
12
-
4
4
8
0
MDA520
ID (A)
T.C.
(mV/K)
1
10
10
-
2
10
-
1
Fig.5
Drain current as a function of gate-source
voltage, typical values per section.
V
DS
= 10 V; T
j
= 25
C.
handbook, halfpage
0
12
8
4
0
4
VGS (V)
ID
(A)
8
16
12
MDA521
October 1992
5
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
I
D
= 2.4 A; V
GS
= 10 V.
handbook, halfpage
0
40
80
160
0.8
0.6
0.2
0
0.4
120
MDA522
RDSon
(
)
Tj (
C)
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values per
section.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
1
10
VDS (V)
20
40
250
0
200
30
150
100
50
C
(pF)
MDA523
Cis
Cos
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values per
section.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
10
20
VDS (V)
Crs
(pF)
40
80
60
20
0
40
30
MDA524
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