DATA SHEET
Product specification
October 1992
DISCRETE SEMICONDUCTORS
BLF547
UHF push-pull power MOS
transistor
October 1992
2
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF547
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability
Designed for broadband operation.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT262A2 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT262A2
PIN
DESCRIPTION
1
drain 1
2
drain 2
3
gate 1
4
gate 2
5
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
halfpage
1
2
3
4
MSB008
Top view
5
5
MBB157
g2
g1
d2
d1
s
QUICK REFERENCE DATA
RF performance at T
h
= 25
C in a push-pull common-source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
P
(dB)
D
(%)
CW, class-B
500
28
100
>
10
>
50
October 1992
3
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF547
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
65
V
V
GS
gate-source voltage
-
20
V
I
D
DC drain current
-
9
A
P
tot
total power dissipation
up to T
mb
= 25
C; total device;
both sections equally loaded
-
225
W
T
stg
storage temperature
-
65
150
C
T
i
junction temperature
-
200
C
SYMBOL
PARAMETER
CONDITIONS
THERMAL
RESISTANCE
R
th j-mb
thermal resistance from junction to
mounting base
T
mb
= 25
C; P
tot
= 225 W
total device; both sections equally
loaded
max. 0.78 K/W
R
th mb-h
thermal resistance from mounting
base to heatsink
total device; both sections equally
loaded
max. 0.15 K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by R
DS(on)
.
(2) T
mb
= 25
C;
Total device; both sections equally loaded.
handbook, halfpage
1
10
1
10
MRA996
10
2
10
2
(1)
ID
(A)
VDS (V)
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
handbook, halfpage
0
50
100
150
200
250
0
20
(2)
(1)
40
60
80
100
120
Ptot
(W)
MRB027
Th (
o
C)
October 1992
4
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF547
CHARACTERISTICS (per section)
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0; I
D
= 25 mA
65
-
-
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 28 V
-
-
2.5
mA
I
GSS
gate-source leakage current
V
GS
= 20 V; V
DS
= 0
-
-
1
A
V
GS(th)
gate-source threshold voltage
I
D
= 100 mA; V
DS
= 10 V
1
-
4
V
g
fs
forward transconductance
I
D
= 3 A; V
DS
= 10 V
1.5
2.1
-
S
R
DS(on)
drain-source on-state resistance
I
D
= 3 A; V
GS
= 10 V
-
0.4
0.5
I
DSX
on-state drain current
V
GS
= 15 V; V
DS
= 10 V
10
13
-
A
C
is
input capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
77
85
pF
C
os
output capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
62
70
pF
C
rs
feedback capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
18
21
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
V
DS
= 10 V.
handbook, halfpage
MRB025
0
2
4
-
2
-
4
10
-
2
10
-
1
1
10
ID (A)
TC
(mV/K)
Fig.5
Drain current as a function of gate-source
voltage, typical values per section.
V
DS
= 10 V; T
j
= 25
C.
handbook, halfpage
MRB024
0
5
10
15
0
5
10
15
20
ID
(A)
VGS (V)
October 1992
5
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF547
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
I
D
= 3 A; V
GS
= 10 V.
handbook, halfpage
MRB029
0
0.2
0.4
0.6
0.8
0
40
80
120
160
RDS(on)
()
Tj (
o
C)
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values per
section.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
100
200
300
0
10
20
30
VDS (V)
C
(pF)
MRB020
Cis
Cis
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values per
section.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
40
80
120
0
10
20
30
Crs
(pF)
VDS (V)
MRB019
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