Document Outline
- FEATURES
- DESCRIPTION
- PINNING - SOT262A2
- PIN CONFIGURATION
- WARNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- APPLICATION INFORMATION FOR CLASS-B OPERATION
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Product specification
Supersedes data of Oct 1992
2003 Sep 26
DISCRETE SEMICONDUCTORS
BLF548
UHF push-pull power MOS
transistor
M3D091
2003 Sep 26
2
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF548
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability
Designed for broadband operation.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT262A2 balanced flange
package, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT262A2
PIN
DESCRIPTION
1
drain 1
2
drain 2
3
gate 1
4
gate 2
5
source
PIN CONFIGURATION
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
halfpage
1
2
3
4
MSB008
Top view
5
5
MBB157
g2
g1
d2
d1
s
QUICK REFERENCE DATA
RF performance at T
h
= 25
C in a push-pull common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
D
(%)
CW, class-B
500
28
150
>
10
>
50
2003 Sep 26
3
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF548
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section unless otherwise specified
V
DS
drain-source voltage
-
65
V
V
GS
gate-source voltage
-
20
V
I
D
drain current (DC)
-
15
A
P
tot
total power dissipation
T
mb
25
C; total device; both sections
equally loaded
-
330
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
200
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
thermal resistance from junction to
mounting base
T
mb
= 25
C; P
tot
= 330 W; total device;
both sections equally loaded
0.5
K/W
R
th mb-h
thermal resistance from mounting
base to heatsink
total device; both sections equally
loaded
0.15
K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by R
DSon
.
(2) T
mb
= 25
C.
Total device; both sections equally loaded.
handbook, halfpage
1
10
1
10
MRA997
10
2
10
2
(1)
ID
(A)
VDS (V)
(2)
Fig.3 Power derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
handbook, halfpage
0
50
100
150
200
250
300
350
400
0
20
40
60
80
100
120
(2)
(1)
MRA532
Ptot
(W)
Th (
o
C)
2003 Sep 26
4
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF548
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor section
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0; I
D
= 40 mA
65
-
-
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 28 V
-
-
0.5
mA
I
GSS
gate-source leakage current
V
GS
=
20 V; V
DS
= 0
-
-
1
A
V
GSth
gate-source threshold voltage
I
D
= 160 mA; V
DS
= 10 V
2
-
4
V
g
fs
forward transconductance
I
D
= 4.8 A; V
DS
= 10 V
2.4
3.5
-
S
R
DSon
drain-source on-state resistance I
D
= 4.8 A; V
GS
= 10 V
-
0.25
0.3
I
DSX
on-state drain current
V
GS
= 15 V; V
DS
= 10 V
16
20
-
A
C
is
input capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
105
-
pF
C
os
output capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
90
-
pF
C
rs
feedback capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
25
-
pF
V
GS
group indicator
GROUP
LIMITS
(V)
GROUP
LIMITS
(V)
MIN.
MAX.
MIN.
MAX.
A
2.0
2.1
O
3.3
3.4
B
2.1
2.2
P
3.4
3.5
C
2.2
2.3
Q
3.5
3.6
D
2.3
2.4
R
3.6
3.7
E
2.4
2.5
S
3.7
3.8
F
2.5
2.6
T
3.8
3.9
G
2.6
2.7
U
3.9
4.0
H
2.7
2.8
V
4.0
4.1
J
2.8
2.9
W
4.1
4.2
K
2.9
3.0
X
4.2
4.3
L
3.0
3.1
Y
4.3
4.4
M
3.1
3.2
Z
4.4
4.5
N
3.2
3.3
2003 Sep 26
5
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF548
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
V
DS
= 10 V.
handbook, halfpage
0
1
2
3
-
1
-
2
-
3
-
4
10
-
1
10
-
2
1
10
TC
(mV/K)
ID (A)
MRA524
Fig.5
Drain current as a function of gate-source
voltage; typical values per section.
V
DS
= 10 V; T
j
= 25
C.
handbook, halfpage
0
5
10
15
20
25
0
4
8
12
16
MRA529
ID
(A)
VGS (V)
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
I
D
= 4.8 A; V
GS
= 10 V.
handbook, halfpage
0
0.1
0.2
0.3
0.4
0.5
0
40
80
120
MRA522
RDSon
()
Tj (
o
C)
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
handbook, halfpage
0
100
200
300
400
0
10
20
30
C
(pF)
VDS (V)
Cos
Cis
MRA525
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