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Электронный компонент: BLT71

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DATA SHEET
Product specification
Supersedes data of 1996 Feb 06
1997 Oct 14
DISCRETE SEMICONDUCTORS
BLT71/8
UHF power transistor
M3D315
1997 Oct 14
2
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
FEATURES
High efficiency
Very high gain
Internal pre-matched input
Low supply voltage.
APPLICATIONS
Hand-held radio equipment in common emitter class-AB
operation for the 900 MHz communication band.
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a SOT96-1 (SO8) plastic SMD package.
PINNING - SOT96-1
PIN
SYMBOL
DESCRIPTION
1, 8
b
base
2, 4, 5, 7
e
emitter
3, 6
c
collector
Fig.1 Simplified outline.
handbook, halfpage
4
5
1
8
Top view
MBK187
QUICK REFERENCE DATA
RF performance at T
s
60
C in a common emitter test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
C
(%)
CW, class-AB
900
4.8
1.2
11
55
typ. 13
typ. 63
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
16
V
V
CEO
collector-emitter voltage
open base
-
8
V
V
EBO
emitter-base voltage
open collector
-
2.5
V
I
C
collector current (DC)
-
500
mA
P
tot
total power dissipation
T
s
= 60
C; V
CE
6.5 V; note 1
-
2.9
W
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
175
C
1997 Oct 14
3
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-s
thermal resistance from junction to
soldering point
P
dis
= 2.9 W; T
s
= 60
C; note 1
40
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
open emitter; I
C
= 0.5 mA
16
-
V
V
(BR)CEO
collector-emitter breakdown voltage
open base; I
C
= 10 mA
8
-
V
V
(BR)EBO
emitter-base breakdown voltage
open collector; I
E
= 0.1 mA
2.5
-
V
I
CES
collector leakage current
V
CE
= 8 V; V
BE
= 0
-
0.1
mA
h
FE
DC current gain
V
CE
= 5 V; I
C
= 100 mA
25
-
C
c
collector capacitance
V
CB
= 4.8 V; I
E
= i
e
= 0; f = 1 MHz
-
7
pF
C
re
feedback capacitance
V
CE
= 4.8 V; I
C
= 0; f = 1 MHz
-
5
pF
Fig.2
DC SOAR.
T
s
= 115
C.
handbook, halfpage
1
10
-
1
MBK263
10
-
1
1
10
IC
(A)
VCE (V)
10
2
(1)
Fig.3
DC current gain as a function of collector
current; typical values.
V
CE
= 4.8 V.
Measured under pulse conditions: t
p
300
s;
0.001.
handbook, halfpage
0
100
50
150
0
200
400
600
800
hFE
IC (mA)
MLD131
1997 Oct 14
4
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
APPLICATION INFORMATION
RF performance at T
s
60
C in a common emitter test circuit.
Ruggedness in class-AB operation
The BLT71/8 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the
following conditions: f = 900 MHz; V
CE
= 6.5 V; I
CQ
= 3 mA; P
L
= 1.2 W; T
s
= 60
C.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
p
(dB)
C
(%)
CW, class-AB
900
4.8
3
1.2
11
55
typ. 13
typ. 63
Fig.4
Power gain and collector efficiency as
functions of load power; typical values.
V
CE
= 4.8 V; I
CQ
= 3 mA; f = 900 MHz.
handbook, halfpage
0
0.4
2.0
16
12
4
0
8
MGD191
0.8
1.2
1.6
Gp
(dB)
Gp
80
C
(%)
60
20
0
40
PL (W)
C
Fig.5
Load power as a function of input power;
typical values.
V
CE
= 4.8 V; I
CQ
= 3 mA; f = 900 MHz.
handbook, halfpage
0
50
100
200
2.0
PL
(W)
0
1.6
MGD192
150
PIN (mW)
1.2
0.8
0.4
1997 Oct 14
5
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
Fig.6 Class-AB test circuit at f = 900 MHz.
handbook, full pagewidth
MBK267
L1
C1
L2
L3
C3
C2
C5
C4
50
input
L10
C12
50
output
L4
L5
L6
L7
TR1
D.U.T.
BLT71/8
L8
C9
C8
L9
C11
C10
C13
L11
C6
C14
L13
R3
TR2
R2
R1
Vbias = 24 V
L12
C15
C7
C16
L14
R4
VC = 4.8 V