DATA SHEET
Product specification
August 1986
DISCRETE SEMICONDUCTORS
BLV10
VHF power transistor
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLV10
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
C in an unneautralized common-emitter class-B circuit
MODE OF OPERATION
V
CE
V
f
MHz
P
L
W
G
P
dB
%
z
i
Y
L
mS
c.w.
13,5
175
8
>
9,0
>
70
2,8
+
j1,2
76
-
j16
c.w.
12,5
175
8
typ. 10,5
typ. 75
-
-
PIN CONFIGURATION
Fig.1 Simplified outline, SOT123.
handbook, halfpage
1
2
3
4
MSB057
PINNING
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLV10
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
V
CESM
max.
36 V
Collector-emitter voltage (open base)
V
CEO
max.
18 V
Emitter-base voltage (open collector)
V
EBO
max.
4 V
Collector current (average)
I
C(AV)
max.
1,5 A
Collector current (peak value); f
>
1 MHz
I
CM
max.
4,0 A
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
C
P
rf
max.
20 W
Storage temperature
T
stg
-
65 to
+
150
C
Operating junction temperature
T
j
max.
200
C
Fig.2 D.C. SOAR.
handbook, halfpage
5
10
15
20
1.75
0.5
1.5
1.25
1
0.75
MGP248
IC
(A)
VCE (V)
Th = 70
C
Tmb = 25
C
Fig.3
R.F. power dissipation;
V
CE
16,5 V; f
>
1 MHz.
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
handbook, halfpage
0
50
100
30
0
10
20
MGP249
Ptot
(W)
Th (
C)
derate by 0.12 W/K
0.1 W/K
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLV10
THERMAL RESISTANCE
(dissipation = 8 W; T
mb
= 72,4
C, i.e. T
h
= 70
C)
CHARACTERISTICS
T
j
= 25
C
Note
1. Measured under pulse conditions: t
p
200
s;
0,02.
From junction to mounting base (d.c. dissipation)
R
th j-mb(dc)
=
10,7 K/W
From junction to mounting base (r.f. dissipation)
R
th j-mb(rf)
=
8,6 K/W
From mounting base to heatsink
R
th mb-h
=
0,3 K/W
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 5 mA
V
(BR) CES
>
36 V
Collector-emitter breakdown voltage
open base; I
C
= 25 mA
V
(BR) CEO
>
18 V
Emitter-base breakdown voltage
open collector; I
E
= 1 mA
V
(BR)EBO
>
4 V
Collector cut-off current
V
BE
= 0; V
CE
= 18 V
I
CES
<
2 mA
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
E
SBO
>
0,5 mJ
R
BE
= 10
E
SBR
>
0,5 mJ
D.C. current gain
(1)
typ.
40
I
C
= 0,75 A; V
CE
= 5 V
h
FE
10 to 100
Collector-emitter saturation voltage
(1)
I
C
= 2 A; I
B
= 0,4 A
V
CEsat
typ.
0,85 V
Transition frequency at f = 100 MHz
(1)
-
I
E
= 0,75 A; V
CB
= 13,5 V
f
T
typ.
950 MHz
-
I
E
= 2 A; V
CB
= 13,5 V
f
T
typ.
850 MHz
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 13,5 V
C
c
typ.
16,5 pF
Feedback capacitance at f = 1 MHz
I
C
= 100 mA; V
CE
= 13,5 V
C
re
typ.
12 pF
Collector-flange capacitance
C
cf
typ.
2 pF
August 1986
5
Philips Semiconductors
Product specification
VHF power transistor
BLV10
Fig.4 Typical values; T
j
= 25
C.
handbook, halfpage
0
1
2
3
100
75
25
0
50
MGP250
hFE
VCE
=
13.5 V
5 V
IC (A)
Fig.5 I
E
= I
e
= 0; f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
5
typ
10
15
40
30
10
0
20
MGP251
Cc
(pF)
VCB (V)
Fig.6 Typical values; f = 100 MHz; T
j
= 25
C.
handbook, full pagewidth
1250
0
0
1
3
MGP252
2
250
500
750
1000
-
IE (A)
fT
(MHz)
VCB
=
13.5 V
10 V
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