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Электронный компонент: BLV12

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DATA SHEET
Product specification
September 1991
DISCRETE SEMICONDUCTORS
BLV12
VHF power transistor
September 1991
2
Philips Semiconductors
Product specification
VHF power transistor
BLV12
FEATURES
Emitter-ballasting resistors for an
optimum temperature profile
Excellent reliability
Withstands full load mismatch.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a 4-lead SOT123
flange envelope with a ceramic cap. It
is designed for common emitter,
class-B operation in mobile VHF
transmitters with a supply voltage of
12.5 V. All leads are isolated from the
mounting flange.
PINNING - SOT123
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
QUICK REFERENCE DATA
RF performance at T
mb
= 25
C in a common emitter test circuit.
PIN CONFIGURATION
MODE OF OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
P
(dB)
C
(%)
c.w. class-B
175
12.5
30
>
9
>
60
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
1
2
3
4
MSB057
September 1991
3
Philips Semiconductors
Product specification
VHF power transistor
BLV12
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
36
V
V
CEO
collector-emitter voltage
open base
-
16
V
V
EBO
emitter-base voltage
open collector
-
3
V
I
C
, I
C(AV)
collector current
DC or average value
-
6
A
I
CM
collector current
peak value
f
>
1 MHz
-
18
A
P
tot
total power dissipation
RF operation;
f
>
1 MHz;
T
mb
= 25
C
-
100
W
T
stg
storage temperature range
-
65
150
C
T
j
junction operating temperature
-
200
C
Fig.2 Power/temperature derating curve.
(I) Continuous DC operation.
(II) Short time operation during mismatch
(f
>
1 MHz)
handbook, halfpage
MRA372
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I
II
(W)
Ptot
T ( C)
o
h
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb(RF)
from junction to mounting base
P
tot
= 100 W;
T
mb
= 25
C
1.75
K/W
R
th mb-h
from mounting base to heatsink
0.3
K/W
September 1991
4
Philips Semiconductors
Product specification
VHF power transistor
BLV12
CHARACTERISTICS
T
j
= 25
C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V
(BR)CBO
collector-base breakdown voltage
open emitter;
I
c
= 10 mA
36
-
-
V
V
(BR)CEO
collector-emitter breakdown voltage open base;
I
c
= 25 mA
16
-
-
V
V
(BR)EBO
emitter-base breakdown voltage
open collector;
I
E
= 2 mA
3
-
-
V
I
CES
collector-emitter leakage current
V
BE
= 0;
V
CE
= 16 V
-
-
10
mA
h
FE
DC current gain
V
CE
= 5 V;
I
C
= 4 A
25
35
-
f
T
transition frequency
V
CE
= 12.5 V;
I
E
= 4 A;
f = 500 MHz
-
1.6
-
GHz
C
c
collector capacitance
V
CB
= 12.5 V;
I
E
= I
e
= 0;
f = 1 MHz
-
90
100
pF
C
re
feedback capacitance
V
CE
= 12.5 V;
I
C
= 0;
f = 1 MHz
-
60
70
pF
C
c-f
collector-flange capacitance
f = 1 MHz
-
2
-
pF
Fig.3
DC current gain as a function of collector
current, typical values.
handbook, halfpage
MRA378
0
10
20
30
40
50
0
4
8
12
16
FE
h
I (A)
C
12.5 V
VCE =
V = 5 V
CE
Fig.4
Collector capacitance as a function of
collector-base voltage, typical values.
I
E
= i
e
= 0; f = 1 MHz.
handbook, halfpage
0
50
100
150
200
250
0
4
8
12
16
MRA374.1
(pF)
c
C
V (V)
CB
September 1991
5
Philips Semiconductors
Product specification
VHF power transistor
BLV12
Fig.5
Transition frequency as a function of emitter
current, typical values.
V
CB
= 12.5 V.
handbook, halfpage
MRA375
0
0.5
1
1.5
2
0
2
4
6
8
10
(GHz)
f T
I (A)
E