DATA SHEET
Product specification
August 1986
DISCRETE SEMICONDUCTORS
BLV25
VHF power transistor
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLV25
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily for use in
v.h.f.-f.m. broadcast transmitters.
FEATURES
internally matched input for
wideband operation and high
power gain;
multi-base structure and diffused
emitter ballasting resistors for an
optimum temperature profile;
gold-metallization ensures
excellent reliability.
The transistor has a
1
/
2
in 6-lead
flange envelope with a ceramic cap.
All leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
C in an unneutralized common-emitter class-B circuit.
MODE OPERATION
V
CE
V
f
MHz
P
L
W
P
S
W
G
p
dB
%
narrow band; c.w.
28
108
175
<
17,5
>
10,0
>
65
PIN CONFIGURATION
Fig.1 Simplified outline, SOT119A.
handbook, halfpage
2
4
6
5
3
1
MSB006
PINNING
PIN
DESCRIPTION
1
emitter
2
emitter
3
base
4
collector
5
emitter
6
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLV25
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); V
BE
= 0
V
CESM
max.
65 V
open base
V
CEO
max.
33 V
Emitter-base voltage (open collector)
V
EBO
max.
4 V
Collector current
d.c. or average
I
C
; I
C(AV)
max.
17, 5 A
(peak value); f
>
1 MHz
I
CM
max.
35 A
Total power dissipation at T
mb
= 25
C
P
tot (d.c.)
max.
220 W
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
C
P
tot (r.f.)
max.
270 W
R.F. power dissipation (f
>
1 MHz); T
h
= 70
C
P
tot (r.f.)
max.
146 W
Storage temperature
T
stg
-
65
to
+
150
C
Operating junction temperature
T
j
max.
200
C
Fig.2 D.C. SOAR.
(1) Second breakdown limit.
handbook, halfpage
10
2
10
1
MGP294
1
10
10
2
IC
(A)
VCE (V)
Tmb = 25
C
Th = 70
C
(1)
Fig.3 Power derating curves vs. temperature.
I Continuous d.c. operation
II Continuous r.f. operation (f
>
1 MHz)
III Short-time operation during mismatch; (f
>
1 MHz).
handbook, halfpage
0
100
300
0
100
200
MGP295
50
Th (
C)
Ptot
(W)
THERMAL RESISTANCE
(dissipation = 150 W; T
mb
= 72
C, i.e. T
h
= 42
C)
From junction to mounting base (d.c. dissipation)
R
th j-mb(dc)
max
0,85 K/W
From junction to mounting base (r.f. dissipation)
R
th j-mb(rf)
max
0,60 K/W
From mounting base to heatsink
R
th mb-h
max
0,2 K/W
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLV25
CHARACTERISTICS
T
j
= 25
C
Notes
1. Measured under pulse conditions: t
p
300
s;
0,02.
2. Measured under pulse conditions: t
p
50
s;
0,01.
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 50 mA
V
(BR)CES
>
65 V
open base; I
C
= 200 mA
V
(BR)CEO
>
33 V
Emitter-base breakdown voltage
open collector; I
E
= 20 mA
V
(BR)EBO
>
4 V
Collector cut-off current
V
BE
= 0; V
CE
= 33 V
I
CES
<
25 mA
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
E
SBO
>
20 mJ
R
BE
= 10
E
SBR
>
20 mJ
D.C. current gain
(1)
I
C
= 8,5 A; V
CE
= 25 V
h
FE
typ.
50
15 to 100
Collector-emitter saturation voltage
(1)
I
C
= 20 A; I
B
= 4,0 A
V
CEsat
typ.
1,6 V
Transition frequency at f
=
100 MHz
(2)
-
I
E
= 8,5 A; V
CB
= 25 V
f
T
typ.
600 MHz
-
I
E
= 20 A; V
CB
= 25 V
f
T
typ.
600 MHz
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 25 V
C
c
typ.
275 pF
Feedback capacitance at f = 1 MHz
I
C
= 100 mA; V
CE
= 25 V
C
re
typ.
155 pF
Collector-flange capacitance
C
cf
typ.
3 pF
August 1986
5
Philips Semiconductors
Product specification
VHF power transistor
BLV25
Fig.4 V
CE
= 25 V; T
j
= 25
C.
handbook, halfpage
0
80
40
0
20
MGP296
10
IC (A)
hFE
typ
Fig.5 V
CB
= 25 V
;
f = 100 MHz; T
j
= 25
C.
handbook, halfpage
0
10
30
800
0
MGP297
20
400
fT
(MHz)
typ
-
IE (A)
Fig.6 I
E
= I
e
= 0; f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
30
600
0
Cc
(pF)
MGP298
VCB (V)
300
typ
PDF 
ZIP