Document Outline
- FEATURES
- DESCRIPTION
- QUICK REFERENCE DATA
- PINNING - SOT171A
- LIMITING VALUES
- THERMAL RESISTANCE
- CHARACTERISTICS
- APPLICATION INFORMATION
- Ruggedness in class-AB operation
- List of components
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
March 1993
DISCRETE SEMICONDUCTORS
BLV97CE
UHF power transistor
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
FEATURES
Internal input matching to achieve high power gain
Ballasting resistors for an optimum temperature profile
Gold metallization ensures excellent reliability
DESCRIPTION
NPN silicon planar epitaxial transistor in a SOT171
envelope, intended for common emitter, class-AB
operation in radio transmitters for the 960 MHz
communications band. The transistor has a 6-lead flange
envelope, with a ceramic cap. All leads are isolated from
the flange.
QUICK REFERENCE DATA
RF performance up to T
h
= 25
C in a common emitter class-AB circuit.
MODE OF OPERATION
f (MHz)
V
CE
(V)
P
L
(W)
G
P
(dB)
c
(%)
c.w. class-AB
960
24
35
>
7
>
50
PINNING - SOT171A
PIN
SYMBOL
DESCRIPTION
1
e
emitter
2
e
emitter
3
b
base
4
c
collector
5
e
emitter
6
e
emitter
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM141
Top view
e
c
b
1
2
3
4
5
6
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector base voltage
open emitter
-
50
V
V
CEO
collector emitter voltage
open base
-
27
V
V
EBO
emitter base voltage
open collector
-
3.5
V
I
C
collector current
DC or average
-
3
A
I
CM
collector current
peak value
f
>
1 MHz
-
9
A
P
tot
total power dissipation
f
>
1 MHz
T
mb
= 25
C
-
70
W
T
stg
storage temperature
-
65
150
C
T
j
operating junction temperature
-
200
C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
thj-mb
from junction to mounting base (RF)
-
2.3
K/W
R
th mb-h
from mounting base to heatsink
-
0.4
K/W
Fig.2 DC SOAR.
handbook, halfpage
10
1
10
-
1
MDA441
1
10
VCE (V)
IC
(A)
10
2
Th = 70
C
Tmb = 25
C
Fig.3
Power/temperature derating;
I: DC or RF operation;
II: short-term operation during mismatch.
handbook, halfpage
0
II
I
40
80
Ptot
(W)
Th (
C)
160
100
0
80
120
60
40
20
MDA442
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
CHARACTERISTICS
at T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
open emitter
I
C
= 50 mA
50
-
-
V
V
(BR)CEO
collector-emitter breakdown voltage
open base
I
C
= 100 mA
27
-
-
V
V
(BR)EBO
emitter-base breakdown voltage
open collector
I
E
= 10 mA
3.5
-
-
V
I
CES
collector leakage current
V
BE
= 0
V
CE
= 27 V
-
-
10
mA
h
FE
DC current gain
I
C
= 2 A
V
CE
= 20 V
15
-
-
C
c
collector capacitance at f = 1 MHz
I
E
= I
e
= 0
V
CB
= 25 V
-
44
-
pF
C
re
feedback capacitance at f = 1 MHz
I
C
= 0
V
CE
= 25 V
-
30
-
pF
C
cf
collector-flange capacitance
-
2
-
pF
Fig.4
DC current gain as a function of collector
current; typical values.
handbook, halfpage
0
2
4
hFE
IC (A)
8
100
0
80
6
60
40
20
MDA443
VCE = 25 V
20 V
Fig.5
Output capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
0
10
VCB (V)
Cc
(pF)
20
30
100
0
80
60
40
20
MDA444
March 1993
5
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
APPLICATION INFORMATION
RF performance in a common emitter test circuit.
T
h
= 25
C, R
th mb-h
= 0.4 K/W unless otherwise specified.
MODE OF OPERATION
f (MHz)
V
CE
(V)
I
C(ZS)
(mA)
P
L
(W)
G
P
(dB)
c
(%)
c.w. class-AB
960
24
60
35
>
7
typ. 8.5
>
50
typ. 55
Fig.6
Power gain and efficiency as a function of
load power; typical values.
handbook, halfpage
0
12
8
4
0
10
20
40
60
0
PL (W)
Gp
(dB)
20
40
30
MDA445
Gp
(%)
Ruggedness in class-AB operation
The BLV97CE is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases, under
the following conditions: V
CE
= 24 V; I
C(ZS)
= 120 mA;
f = 960 MHz at rated output power.
Fig.7
Load power as a function of input power;
typical values.
handbook, halfpage
0
2
PS (W)
4
8
50
0
40
6
30
20
10
PL
(W)
MDA446
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