Document Outline
- DESCRIPTION
- QUICK REFERENCE DATA
- PIN CONFIGURATION
- PINNING - SOT120A.
- RATINGS
- THERMAL RESISTANCE
- CHARACTERISTICS
- Breakdown voltage
- Collector cut-off current
- Transient energy
- D.C. current gain
- D.C. current gain ratio of matched devices
- Collector-emitter saturation voltage
- Transition frequency
- Collector capacitance
- Feedback capacitance
- Collector-stud capacitance
- APPLICATION INFORMATION
- Measuring conditions for Figs 16 and 17:
- Measuring conditions for Figs 18 and 19:
- S.S.B. class-AB operation
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
March 1993
DISCRETE SEMICONDUCTORS
BLW60C
VHF power transistor
March 1993
2
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, industrial
and military transmitters with a
nominal supply voltage of 12,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
Matched h
FE
groups are available on
request.
It has a 3/8" capstan envelope with a
ceramic cap. All leads are isolated
from the stud.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
C
MODE OF OPERATION
V
CC
V
f
MHz
P
L
W
G
L
dB
%
z
i
Z
L
d
3
dB
c.w. (class-B)
12,5
175
45
>
5,0
>
75
1,2
+
j1,4
2,6
-
j1,2
-
s.s.b. (class-AB)
12,5 1,6-28
3-30 (P.E.P.) typ. 19,5
typ. 35
-
-
typ.
-
33
PIN CONFIGURATION
Fig.1 Simplified outline. SOT120A.
handbook, halfpage
MSB056
2
3
1
4
PINNING - SOT120A.
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993
3
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
V
CESM
max.
36 V
Collector-emitter voltage (open base)
V
CEO
max.
16 V
Emitter-base voltage (open collector)
V
EBO
max.
4 V
Collector current (average)
I
C(AV)
max.
9 A
Collector current (peak value); f
>
1 MHz
I
CM
max.
22 A
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
C
P
rf
max.
100 W
Storage temperature
T
stg
-
65 to
+
150
C
Operating junction temperature
T
j
max.
200
C
Fig.2 D.C. SOAR.
handbook, halfpage
MGP479
10
2
10
1
1
10
10
2
VCE (V)
IC
(A)
Th = 70
C
Tmb = 25
C
Fig.3 R.F. power dissipation; V
CE
16,5 V; f
>
MHz.
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
handbook, halfpage
0
150
100
50
0
100
MGP480
50
Th (
C)
Prf
(W)
derate by 0.52 W/K
0.38 W/K
THERMAL RESISTANCE
(dissipation = 40 W; T
mb
= 88
C, i.e. T
h
= 70
C)
From junction to mounting base (d.c. dissipation)
R
th j-mb(dc)
=
2,8 K/W
From junction to mounting base (r.f. dissipation)
R
th j-mb(rf)
=
2,05 K/W
From mounting base to heatsink
R
th mb-h
=
0,45 K/W
March 1993
4
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
CHARACTERISTICS
T
j
= 25
C
Note
1. Measured under pulse conditions: t
p
200
s;
0,02.
Breakdown voltage
Collector-emitter voltage
V
BE
= 0; I
C
= 50 mA
V
(BR)CES
>
36 V
Collector-emitter voltage
open base; I
C
= 100 mA
V
(BR)CEO
>
16 V
Emitter-base voltage
open collector; I
E
= 25 mA
V
(BR)EBO
>
4 V
Collector cut-off current
V
BE
= 0; V
CE
= 15 V
I
CES
<
25 mA
Transient energy
L = 25 mH; f = 50 Hz
open base
E
>
8 ms
-
V
BE
= 1,5 V; R
BE
= 33
E
>
8 ms
D.C. current gain
(1)
I
C
= 4 A; V
CE
= 5 V
h
FE
typ
50
10
to
80
D.C. current gain ratio of matched devices
(1)
I
C
= 4 A; V
CE
= 5 V
h
FE1
/h
FE2
<
1,2
Collector-emitter saturation voltage
(1)
I
C
= 12,5 A; I
B
= 2,5 A
V
CEsat
typ
1,5 V
Transition frequency at f = 100 MHz
(1)
I
C
= 4 A; V
CE
= 12,5 V
f
T
typ
650 MHz
I
C
= 12,5 A; V
CE
= 12,5 V
f
T
typ
600 MHz
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 15 V
C
c
typ
120 pF
<
160 pF
Feedback capacitance at f = 1 MHz
I
C
= 200 mA; V
CE
= 15 V
C
re
typ
80 pF
Collector-stud capacitance
C
cs
typ
2 pF
March 1993
5
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
Fig.4
DC current gain as a function of collector
current.
handbook, halfpage
0
5
10
15
75
50
0
hFE
MGP481
IC (A)
25
VCE = 12.5 V
5 V
typical values Tj = 25
C
Fig.5
Collector capacitance as a function of
collector-base voltage.
handbook, halfpage
0
10
20
300
0
Cc
(pF)
MGP482
VCB (V)
100
200
typ
IE = Ie = 0
f = 1 MHz
Fig.6 Transition frequency as a function of collector current.
handbook, full pagewidth
20
750
0
0
5
10
MGP483
500
250
15
IC (A)
fT
(MHz)
VCE = 12.5 V
10 V
5 V
typical values
f = 100 MHz
Tj = 25
C
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