DATA SHEET
Product specification
August 1986
DISCRETE SEMICONDUCTORS
BLW86
HF/VHF power transistor
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions. Matched
h
FE
groups are available on request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
C
MODE OF
OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
%
z
i
Y
L
mS
d
3
dB
c.w. (class-B)
28
175
45
>
7,5
>
70
0,7
+
j1,3
110
-
j62
-
s.s.b. (class-AB)
28
1,6
-
28
5
-
47,5 (P.E.P.)
typ. 19
typ. 45
-
-
typ.
-
30
s.s.b. (class-A)
26
1,6
-
28
17 (P.E.P.)
typ. 22
-
-
-
typ.
-
42
PIN CONFIGURATION
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
1
2
3
4
MSB057
PINNING - SOT123
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
V
CESM
max.
65 V
Collector-emitter voltage (open base)
V
CEO
max.
36 V
Emitter-base voltage (open-collector)
V
EBO
max.
4 V
Collector current (average)
I
C(AV)
max.
4 A
Collector current (peak value); f
>
1 MHz
I
CM
max.
12 A
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
C
P
rf
max.
105 W
Storage temperature
T
stg
-
65 to
+
150
C
Operating junction temperature
T
j
max.
200
C
Fig.2 D.C. SOAR.
handbook, halfpage
10
1
MGP630
10
10
2
IC
(A)
Th = 70
C
Tmb = 25
C
VCE (V)
Fig.3 R.F. power dissipation; V
CE
28 V; f
>
1 MHz.
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
handbook, halfpage
0
50
100
150
0
100
MGP631
50
Prf
(W)
Th (
C)
derate by 0.58 W/K
0.43 W/K
THERMAL RESISTANCE
(dissipation = 45 W; T
mb
= 83,5
C, i.e. T
h
= 70
C)
From junction to mounting base (d.c. dissipation)
R
th j-mb(dc)
=
2,65 K/W
From junction to mounting base (r.f. dissipation)
R
th j-mb(rf)
=
1,95 K/W
From mounting base to heatsink
R
th mb-h
=
0,3 K/W
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
CHARACTERISTICS
T
j
= 25
C unless otherwise specified
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 25 mA
V
(BR)CES
>
65 V
Collector-emitter breakdown voltage
open base; I
C
= 100 mA
V
(BR)CEO
>
36 V
Emitter-base breakdown voltage
open collector; I
E
= 10 mA
V
(BR)EBO
>
4 V
Collector cut-off current
V
BE
= 0; V
CE
= 36 V
I
CES
<
10 mA
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
E
SBO
>
8 mJ
R
BE
= 10
E
SBR
>
8 mJ
D.C. current gain
(1)
I
C
= 2,5 A; V
CE
= 5 V
h
FE
typ.
45
10 to 80
D.C. current gain ratio of matched devices
(1)
I
C
= 2,5 A; V
CE
= 5 V
h
FE1
/h
FE2
<
1,2
Collector-emitter saturation voltage
(1)
I
C
= 7,5 A; I
B
= 1,5 A
V
CEsat
typ.
1,5 V
Transition frequency at f = 100 MHz
(1)
-
I
E
= 2,5 A; V
CB
= 28 V
f
T
typ.
570 MHz
-
I
E
= 7,5 A; V
CB
= 28 V
f
T
typ.
570 MHz
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 28 V
C
c
typ.
82 pF
Feedback capacitance at f = 1 MHz
I
C
= 100 mA; V
CE
= 28 V
C
re
typ.
54 pF
Collector-flange capacitance
C
cf
typ.
2 pF
Note
1. Measured under pulse
conditions: t
p
200
s;
0,02.
Fig.4
Typical values;
V
CE
= 28 V.
handbook, halfpage
0.5
4
2
0
1.5
MGP632
1
Th = 70
C
25
C
IC
(A)
VBE (V)
August 1986
5
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
Fig.5 Typical values; T
j
= 25
C.
handbook, halfpage
0
5
10
15
100
0
50
MGP633
VCE = 28 V
5 V
hFE
IC (A)
Fig.6 I
E
= I
e
= 0; f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
20
40
300
0
200
MGP634
100
typ
Cc
(pF)
VCB (V)
Fig.7 Typical values; f = 100 MHz; T
j
= 25
C.
handbook, full pagewidth
15
1000
0
0
5
10
MGP635
500
15 V
VCB = 28 V
fT
(MHz)
-
IE (A)
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