DATA SHEET
Product specification
August 1986
DISCRETE SEMICONDUCTORS
BLW87
VHF power transistor
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLW87
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
C in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
%
z
i
Y
L
mS
c.w.
13,5
175
25
>
6
>
70
1,6
+
j1,4
210
+
j5,5
PIN CONFIGURATION
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
1
2
3
4
MSB057
PINNING - SOT123
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLW87
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
V
CESM
max.
36 V
Collector-emitter voltage (open base)
V
CEO
max.
18 V
Emitter-base voltage (open collector)
V
EBO
max.
4 V
Collector current (average)
I
C(AV)
max.
6 A
Collector current (peak value); f
>
1 MHz
I
CM
max.
12 A
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
C
P
rf
max.
76 W
Storage temperature
T
stg
-
65 to
+
150
C
Operating junction temperature
T
j
max.
200
C
Fig.2 D.C. SOAR.
handbook, halfpage
10
1
MGP649
1
10
10
2
VCE (V)
IC
(A)
Th = 70
C
Tmb = 25
C
Fig.3
R.F. power dissipation; V
CE
16,5 V; f
1 MHz.
handbook, halfpage
0
50
100
150
100
0
50
MGP650
Prf
(W)
Th (
C)
continuous
d.c. operation
derate by
0.32 W/K
continuous
r.f. operation
derate by
0.42 W/K
short-time
operation
during mismatch
THERMAL RESISTANCE
(dissipation = 20 W; T
mb
= 76
C; i.e. T
h
= 70
C)
From junction to mounting base (d.c. dissipation)
R
th j-mb(dc)
=
3,0 K/W
From junction to mounting base (r.f. dissipation)
R
th j-mb(rf)
=
2,25 K/W
From mounting base to heatsink
R
th mb-h
=
0,3 K/W
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLW87
CHARACTERISTICS
T
j
= 25
C
Note
1. Measured under pulse conditions: t
p
200
s;
0,02.
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 25 mA
V
(BR) CES
>
36 V
Collector-emitter breakdown voltage
open base; I
C
= 50 mA
V
(BR) CEO
>
18 V
Emitter-base breakdown voltage
open collector; I
E
= 10 mA
V
(BR)EBO
>
4 V
Collector cut-off current
V
BE
= 0; V
CE
= 18 V
I
CES
<
10 mA
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
E
SBO
>
8 mJ
R
BE
= 10
E
SBR
>
8 mJ
D.C. current gain
(1)
typ.
50
I
C
= 2,5 A; V
CE
= 5 V
h
FE
10 to 80
Collector-emitter saturation voltage
(1)
I
C
= 7,5 A; I
B
= 1,5 A
V
CEsat
typ.
1,7 V
Transition frequency at f = 100 MHz
(1)
-
I
E
= 2,5 A; V
CB
= 13,5 V
f
T
typ.
800 MHz
-
I
E
= 7,5 A; V
CB
= 13,5 V
f
T
typ.
750 MHz
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 15 V
C
c
typ.
65 pF
Feedback capacitance at f = 1 MHz
I
C
= 100 mA; V
CE
= 15 V
C
re
typ.
41 pF
Collector-flange capacitance
C
cf
typ.
2 pF
August 1986
5
Philips Semiconductors
Product specification
VHF power transistor
BLW87
Fig.4
handbook, halfpage
0
5
10
15
75
50
0
hFE
MGP651
IC (A)
25
VCE = 13.5 V
5 V
typical values Tj = 25
C
Fig.5 T
j
= 25
C.
handbook, halfpage
0
10
20
200
0
Cc
(pF)
MGP652
VCB (V)
100
typ
IE = Ie = 0
f = 1 MHz
Fig.6
handbook, full pagewidth
1000
0
0
5
10
MGP653
500
15
-
IE (A)
fT
(MHz)
VCB = 13.5 V
f = 100 MHz
Tj = 25
C
typ
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