DATA SHEET
Product specification
August 1986
DISCRETE SEMICONDUCTORS
BLW96
HF/VHF power transistor
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated high power
industrial and military transmitting
equipment in the h.f. and v.h.f. band.
The transistor presents excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions. Transistors are supplied
in matched h
FE
groups.
The transistor has a
1
/
2
" flange
envelope with a ceramic cap. All
leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
C
Note
1.
dt
at 200 W P.E.P.
MODE OF
OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
%
d
3
dB
d
5
dB
I
C(ZS)
(I
C
)
A
s.s.b. (class-AB)
50
1,6
-
28
25
-
200 (P.E.P.)
>
13,5
>
40
(1)
<
-
30
<
-
30
0,1
c.w. (class-B)
50
108
200
typ.
6,5 typ. 67
-
-
(6)
s.s.b. (class-A)
40
28
50 (P.E.P.) typ.
19
-
typ.
-
40
<
-
40
(4)
PIN CONFIGURATION
Fig.1 Simplified outline. SOT121B.
handbook, halfpage
MLA876
4
3
2
1
PINNING - SOT121B.
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
V
CESM
max.
110 V
Collector-emitter voltage (open base)
V
CEO
max.
55 V
Emitter-base voltage (open collector)
V
EBO
max.
4 V
Collector current (average)
I
C(AV)
max.
12 A
Collector current (peak value); f
>
1 MHz
I
CM
max.
40 A
R.F. power dissipation (f
>
1 MHz); T
mb
= 45
C
P
rf
max.
340 W
Storage temperature
T
stg
-
65 to
+
150
C
Operating junction temperature
T
j
max.
200
C
Fig.2 D.C. SOAR.
handbook, halfpage
MGP685
10
2
10
1
10
10
2
IC
(A)
VCE (V)
Tmb = 45
C
Th = 70
C
Fig.3 Power/temperature derating curves.
I Continuous d.c. operation
II Continuous r.f. operation; f
>
1 MHz
III Short-time operation during mismatch; f
>
1 MHz
handbook, halfpage
0
50
100
150
400
300
100
0
200
MGP686
Ptot
(W)
Th (
C)
derate by
1.58 W/K
1.35 W/K
THERMAL RESISTANCE
(dissipation = 150 W; T
mb
= 100
C, i.e. T
h
= 70
C)
From junction to mounting base (d.c. dissipation)
R
th j-mb(dc)
=
0,63 K/W
From junction to mounting base (r.f. dissipation)
R
th j-mb(rf)
=
0,45 K/W
From mounting base to heatsink
R
th mb-h
=
0,2 K/W
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
CHARACTERISTICS
T
j
= 25
C
Notes
1. Measured under pulse conditions: t
p
300
s;
0,02.
2. Measured under pulse conditions: t
p
50
s;
0,01.
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 50 mA
V
(BR)CES
>
110 V
Collector-emitter breakdown voltage
open base; I
C
= 200 mA
V
(BR)CEO
>
55 V
Emitter-base breakdown voltage
open collector; I
E
= 20 mA
V
(BR)EBO
>
4 V
Collector cut-off current
V
BE
= 0; V
CE
= 55 V
I
CES
<
10 mA
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
E
SBO
>
20 mJ
R
BE
= 10
E
SBR
>
20 mJ
D.C. current gain
(1)
typ.
15 to
30
50
I
C
= 7 A; V
CE
= 5 V
h
FE
D.C. current gain ratio of matched devices
(1)
I
C
= 7 A; V
CE
= 5 V
h
FE1
/h
FE2
1,2
Collector-emitter saturation voltage
(1)
I
C
= 20 A; I
B
= 4 A
V
CEsat
typ.
1,9 V
Transition frequency at f = 100 MHz
(2)
-
I
E
= 7 A; V
CB
= 45 V
f
T
typ.
235 MHz
-
I
E
= 20 A; V
CB
= 45 V
f
T
typ.
245 MHz
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 50 V
Feedback capacitance at f = 1 MHz
C
c
typ.
280 pF
I
C
= 150 mA; V
CE
= 50 V
C
re
typ.
170 pF
Collecting-flange capacitance
C
cf
typ.
4,4 pF
August 1986
5
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
Fig.4 Typical values; V
CE
= 40 V.
handbook, halfpage
1250
500
1000
750
10
1
10
-
1
10
-
2
MGP687
VBE (mV)
-
IE
(A)
Th = 70
C
25
C
Fig.5 Typical values; T
j
= 25
C.
handbook, halfpage
0
10
IC (A)
30
50
0
40
MGP688
20
30
20
10
hFE
VCE = 45 V
15 V
5 V
Fig.6 Typical values; f = 100 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
30
300
fT
(MHz)
0
100
200
MGP689
-
IE (A)
15 V
VCB = 45 V
5 V
Fig.7 I
E
= I
e
= 0; f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
25
50
75
1000
750
250
0
500
MGP690
Cc
(pF)
VCB (V)
typ
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