Document Outline
- GENERAL DESCRIPTION
- QUICK REFERENCE DATA
- OUTLINE - SOD84
- SYMBOL
- LIMITING VALUES
- THERMAL RESISTANCES
- STATIC CHARACTERISTICS
- DYNAMIC CHARACTERISTICS
- MECHANICAL DATA
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
A range of bidirectional, breakover
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
diodes in an axial, hermetically
sealed,
glass
envelope.
These
BR211-140 to 280
devices feature controlled breakover
V
(BO)
Breakover voltage
140
280
V
voltage and high holding current
I
H
Holding current
150
-
mA
together with high peak current
I
TSM
Non-repetitive peak current
-
40
A
handling
capability.
Typical
applications
include
transient
overvoltage
protection
in
telecommunications equipment.
OUTLINE - SOD84
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
D
Continuous voltage
-
75% of
V
V
(BO)typ
I
TSM1
Non repetitive peak current
10/320
s impulse equivalent to
-
40
A
10/700
s, 1.6 kV voltage impulse
(CCITT K17)
I
TSM2
Non repetitive on-state current
half sine wave; t = 10 ms;
-
15
A
T
j
= 70 C prior to surge
I
2
t
I
2
t for fusing
t
p
= 10 ms
-
1.1
A
2
s
dI
T
/dt
Rate of rise of on-state current
t
p
= 10
s
-
50
A/
s
after V
(BO)
turn-on
P
tot
Continuous dissipation
T
a
= 25C
-
1.2
W
P
TM
Peak dissipation
t
p
= 1 ms; T
a
= 25C
-
50
W
T
stg
Storage temperature
-65
150
C
T
a
Operating ambient temperature off-state
-
70
C
T
vj
Overload junction temperature
on-state
-
150
C
BR211-XXX
XXX denotes voltage grade
August 1996
1
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-e
Thermal resistance junction to
-
22
-
K/W
envelope
R
th j-a
Thermal resistance junction to
mounted as fig:12
-
105
K/W
ambient
Z
th j-a
Thermal impedance junction to
t
p
= 1 ms
-
2.62
-
K/W
ambient
R
th e-tp
Thermal resistance envelope to lead length = 5 mm
-
15
-
K/W
tie point
lead length = 10 mm
-
30
-
K/W
R
th e-a
Thermal resistance envelope to lead length = 5 mm
-
440
-
K/W
ambient
lead length = 10 mm
-
350
-
K/W
R
th tp-a
Thermal resistance tie point to
mounted as fig:12
-
70
-
K/W
ambient
mounted with 1 cm
2
copper
-
55
-
K/W
laminate per lead.
mounted with 2.25 cm2 copper
-
45
-
K/W
laminate per lead
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
TM
1
On-state voltage
I
TM
= 2 A
-
-
2.5
V
V
(BR)
Avalanche voltage (min)
I
(BR)
= 10
mA
V
(BO)
Breakover voltage (max)
I
I
S
, t
p
= 100
s
BR211-140
123
140
157
V
BR211-160
140
160
180
V
BR211-180
158
180
202
V
BR211-200
176
200
224
V
BR211-220
193
220
247
V
BR211-240
211
240
269
V
BR211-260
228
260
292
V
BR211-280
246
280
314
V
V
V
S
(br)
Temperature coefficient of V
(BR)
-
+0.1
-
%/K
I
H
2
Holding current
T
j
= 25C
150
-
-
mA
T
j
= 70C
100
-
-
mA
I
S
3
Switching current
t
p
= 100
s
10
200
1000
mA
I
D
4
Off-state current
V
D
= 85% V
(BR)min
, T
j
= 70C
-
-
10
A
1 Measured under pulsed conditions to avoid excessive dissipation
2 The minimum current at which the diode will remain in the on-state
3 The avalanche current required to switch the diode to the on-state
4 Measured at maximum recommended continuous voltage. Illuminance
500 lux (daylight); relative
humidity < 65%.
August 1996
2
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D
/dt
Linear rate of rise of off-state
V
(DM)
= 85% V
(BR)min
; T
j
= 70 C
-
-
2000
V/
s
voltage that will not trigger any
device
C
j
Off-state capacitance
V
D
= 0 V; f = 1 kHz to 1 MHz
-
-
100
pF
Fig.1. Definition of breakover diode characteristics.
Fig.2. Test waveform for high voltage impulse (I
TSM1
)
according to CCITT vol IX-Rec K17.
Fig.3. Maximum permissible non-repetitive on-state
current based on sinusoidal currents; f = 50 Hz;
device triggered at the start of each pulse; T
j
= 70C
prior to surge.
Fig.4. Normalised avalanche breakdown voltage V
(BR)
and V
(BO)
as a function of temperature.
VT
IT
IH
V(BO)
IS
ID
VD
current
voltage
Symbol
V(BR)
I(BR)
Symmetric BOD
1
10
100
1000
10000
0
5
10
15
20
BR211
Number of impulses
ITSM / A
I
ITSM2
time
100%
90%
50%
30%
ITSM
10us
700us
time
current
0
-40
-20
0
20
40
60
80
100
Tj / C
V(BR)(Tj)
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90
V(BR)(25 C)
August 1996
3
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
Fig.5. On-state current as a function of on-state
voltage; t
p
= 200
s to avoid excessive dissipation.
Fig.6. Maximum off-state current as a function of
temperature.
Fig.7. Switching current as a function of junction
temperature.
Fig.8. Minimum holding current as a function of
temperature.
Fig.9. Typical junction capacitance as a function of
off-state voltage, f = 1 MHz; T
j
= 25C.
Fig.10. Transient thermal impedance. Z
th
j-a
= f(t
p
).
1
2
3
4
0
5
10
15
20
Tj = 25 C
Tj = 150 C
IT / A
VT / V
typ
max
-50
0
50
150
Tj / C
IH / A
0.001
0.01
0.1
10
100
1
min
-40
-20
0
20
40
60
80
100
Tj / C
ID / uA
0.1
1
10
100
max
VD / V
1
10
100
1000
1
10
100
Cj / pF
BR211-280
BR211-140
typ
-50
0
50
150
Tj / C
IS / A
0.001
0.01
0.1
10
100
1
max
typ
min
t
p
P
t
D
Zth / (K/W)
0.1
1
10
100
1000
10us
1ms
0.1s
10s
1000s
tp / s
BR211
August 1996
4
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
Fig.11. Components of thermal resistance,
Fig.12. Mounting on pcb used for R
th
measurement.
junction
ambient
tie-point
Rth e-tp
Rth tp-a
Rth e-a
Rth j-e
envelope
50
50
7
2
25
3
Rth j
-
a
=
Rth j
-
e
+
Rth e
-
a
.(
Rth e
-
tp
+
Rth tp
-
a
)
(
Rth e
-
a
+
Rth e
-
tp
+
Rth tp
-
a
)
August 1996
5
Rev 1.200
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