Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- QUICK REFERENCE DATA
- PINNING
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Product specification
Supersedes data of 1997 Jun 23
2002 Feb 19
DISCRETE SEMICONDUCTORS
BSN254; BSN254A
N-channel enhancement mode
vertical D-MOS transistor
book, halfpage
M3D186
2002 Feb 19
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
FEATURES
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown
Low R
DSon
.
APPLICATIONS
Line current interruptor in telephone sets
Relay, high-speed and line transformer drivers.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT54 (TO-92) variant package.
PINNING - SOT54 variant
PIN
DESCRIPTION
BSN254
BSN254A
1
gate
source
2
drain
gate
3
source
drain
handbook, halfpage
1
3
2
MAM146
s
d
g
Fig.1 Simplified outline and symbol.
note: various pinnings are available on request
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum
10
10 mm.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
DS
drain-source voltage (DC)
-
250
V
I
D
drain current (DC)
-
310
mA
P
tot
total power dissipation
T
amb
25
C
-
1
W
R
DSon
drain-source on-state resistance I
D
= 300 mA; V
GS
= 10 V
2.8
5
V
GSth
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
-
2
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage (DC)
-
250
V
V
GSO
gate-source voltage (DC)
open drain
-
20
V
I
D
drain current (DC)
-
310
mA
I
DM
peak drain current
-
1.25
A
P
tot
total power dissipation
T
amb
25
C; note 1
-
1
W
T
stg
storage temperature
-
55
+150
C
T
j
junction temperature
-
150
C
2002 Feb 19
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum
10
10 mm.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient; note 1
125
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage
I
D
= 10
A; V
GS
= 0
250
-
-
V
I
GSS
gate-source leakage current
V
GS
=
20 V; V
DS
= 0
-
-
100
nA
V
GSth
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
0.8
-
2
V
R
DSon
drain-source on-state resistance
I
D
= 20 mA; V
GS
= 2.4 V
-
-
7.5
I
D
= 300 mA; V
GS
= 10 V
-
2.8
5
I
DSS
drain-source leakage current
V
DS
= 200 V; V
GS
= 0
-
-
1
A
Y
fs
transfer admittance
I
D
= 300 mA; V
DS
= 25 V
200
600
-
mS
C
iss
input capacitance
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
-
100
120
pF
C
oss
output capacitance
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
-
21
30
pF
C
rss
feedback capacitance
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
-
10
15
pF
Switching times (see Figs 2 and 3)
t
on
turn-on time
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
-
6
10
ns
t
off
turn-off time
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 10 to 0 V
-
47
60
ns
2002 Feb 19
4
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
Fig.2 Switching times test circuit.
handbook, halfpage
MBB691
50
VDD = 50 V
ID
10 V
0 V
Fig.3 Input and output waveforms.
handbook, halfpage
MBB692
10 %
90 %
90 %
10 %
ton
toff
OUTPUT
INPUT
handbook, halfpage
0
1.2
0.8
0.4
0
50
100
200
150
MRC238
Ptot
(W)
Tamb (
C)
Fig.4 Power derating curve.
handbook, halfpage
0
2
10
VDS (V)
1.2
0.4
0
0.8
4
(1)
(2)
(3)
(4)
(5)
(7)
6
ID
(A)
8
MGU569
(6)
Fig.5
Typical output characteristics.
T
j
= 25
C.
(1) V
GS
= 10 V.
(2) V
GS
= 5 V.
(3) V
GS
= 4 V.
(4) V
GS
= 3.5 V.
(5) V
GS
= 3 V.
(6) V
GS
= 2.5 V.
(7) V
GS
= 2 V.
2002 Feb 19
5
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
handbook, halfpage
0
2
10
VGS (V)
1.6
1.2
0.4
0
0.8
1.4
0.6
0.2
1
4
6
ID
(A)
8
MGU570
Fig.6 Typical transfer characteristics.
V
DS
= 10 V; T
j
= 25
C.
handbook, halfpage
20
10
5
0
15
MGU571
10
-
1
1
10
ID (A)
RDSon
(
)
(1)
(2)
(3)
(4)
(5)
(6)
Fig.7
Drain-source on-state resistance as a
function of drain current; typical values.
T
j
= 25
C.
(1) V
GS
= 2.5 V.
(2) V
GS
= 3 V.
(3) V
GS
= 3.5 V.
(4) V
GS
= 4 V.
(5) V
GS
= 5 V.
(6) V
GS
= 10 V.
handbook, halfpage
250
0
10
30
0
20
VDS (V)
C
(pF)
50
100
150
200
MGU572
Ciss
Coss
Crss
Fig.8
Input, output and feedback capacitance as
functions of drain-source voltage; typical
values.
V
GS
= 0; f = 1 MHz; T
j
= 25
C.
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