DATA SHEET
Product specification
Supersedes data of 1997 Jan 20
File under Discrete Semiconductors, SC07
1997 Mar 13
DISCRETE SEMICONDUCTORS
BSP030
N-channel enhancement mode
vertical D-MOS transistor
1997 Mar 13
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP030
FEATURES
High speed switching
No secondary breakdown
Very low on-state resistance.
APPLICATIONS
Motor and actuator drivers
Power management
Synchronized rectification.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a 4-pin plastic SOT223 SMD package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT223
PIN
SYMBOL
DESCRIPTION
1
g
gate
2
d
drain
3
s
source
4
d
drain
handbook, halfpage
MAM054 - 1
4
1
2
3
Top view
s
d
g
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage (DC)
-
30
V
V
SD
source-drain diode forward voltage
I
S
= 1.25 A
-
1
V
V
GS
gate-source voltage (DC)
-
20
V
V
GSth
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
1
2.8
V
I
D
drain current (DC)
T
s
= 100
C
-
10
A
R
DSon
drain-source on-state resistance
I
D
= 5 A; V
GS
= 10 V
-
0.03
P
tot
total power dissipation
T
s
= 100
C
-
5
W
1997 Mar 13
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP030
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. T
s
is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Value based on printed-circuit board with a R
th a-tp
(ambient to tie-point) of 27.5 K/W.
4. Value based on printed-circuit board with a R
th a-tp
(ambient to tie-point) of 90 K/W.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage (DC)
-
30
V
V
GS
gate-source voltage (DC)
-
20
V
I
D
drain current (DC)
T
s
= 100
C; note 1
-
10
A
I
DM
peak drain current
note 2
-
40
A
P
tot
total power dissipation
T
s
= 100
C
-
5
W
T
amb
= 25
C; note 3
-
3.3
W
T
amb
= 25
C; note 4
-
1.25
W
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
65
+150
C
Source-drain diode
I
S
source current (DC)
T
s
= 100
C
-
5
A
I
SM
peak pulsed source current
note 2
-
20
A
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
10
K/W
1997 Mar 13
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP030
Fig.2 Power derating curve.
handbook, halfpage
0
15
Ptot
(W)
10
5
0
50
100
200
150
Ts (
C)
MGD716
= 0.01; T
s
= 100
C.
(1) R
DSon
limitation.
Fig.3 SOAR.
handbook, halfpage
10
2
10
1
10
-
1
10
-
2
MGD717
10
-
1
1
VDS (V)
ID
(A)
10
10
2
(1)
tp =
10
s
50
s
100
s
1 ms
DC
10 ms
100 ms
tp
tp
T
P
t
T
=
1997 Mar 13
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP030
CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0; I
D
= 10
A
30
-
-
V
V
GSth
gate-source threshold voltage
V
GS
= V
DS
; I
D
= 1 mA
1
-
2.8
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 24 V
-
-
500
nA
I
GSS
gate leakage current
V
GS
=
20 V; V
DS
= 0
-
-
100
nA
R
DSon
drain-source on-state resistance
V
GS
= 4.5 V; I
D
= 2.5 A
-
-
0.05
V
GS
= 10 V; I
D
= 5 A
-
-
0.03
C
iss
input capacitance
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
-
750
-
pF
C
oss
output capacitance
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
-
450
-
pF
C
rss
reverse transfer capacitance
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
-
200
-
pF
Q
g
total gate charge
V
GS
= 10 V; V
DD
= 15 V; I
D
= 5 A;
T
amb
= 25
C
-
28
-
nC
Q
gs
gate-source charge
V
GS
= 10 V; V
DD
= 15 V; I
D
= 5 A;
T
amb
= 25
C
-
2.5
-
nC
Q
gd
gate-drain charge
V
GS
= 10 V; V
DD
= 15 V; I
D
= 5 A;
T
amb
= 25
C
-
10.5
-
nC
t
d(on)
turn-on delay time
V
GS
= 0 to 10 V; V
DD
= 15 V;
I
D
= 1 A; R
L
= 15
; R
gen
= 6
-
14
-
ns
t
f
fall time
V
GS
= 0 to 10 V; V
DD
= 15 V;
I
D
= 1 A; R
L
= 15
; R
gen
= 6
-
18
-
ns
t
on
turn-on switching time
V
GS
= 0 to 10 V; V
DD
= 15 V;
I
D
= 1 A; R
L
= 15
; R
gen
= 6
-
32
60
ns
t
d(off)
turn-off delay time
V
GS
= 10 to 0 V; V
DD
= 15 V;
I
D
= 1 A; R
L
= 15
; R
gen
= 6
-
29
-
ns
t
r
rise time
V
GS
= 10 to 0 V; V
DD
= 15 V;
I
D
= 1 A; R
L
= 15
; R
gen
= 6
-
33
-
ns
t
off
turn-off switching time
V
GS
= 10 to 0 V; V
DD
= 15 V;
I
D
= 1 A; R
L
= 15
; R
gen
= 6
-
62
150
ns
Source-drain diode
V
SD
source-drain diode forward voltage
V
GD
= 0; I
S
= 1.25 A
-
-
1
V
t
rr
reverse recovery time
I
S
= 1.25 A; di/dt =
-
100 A/
s
-
70
-
ns
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