DATA SHEET
Product specification
File under Discrete Semiconductors, SC13b
April 1995
DISCRETE SEMICONDUCTORS
BSP122
N-channel enhancement mode
vertical D-MOS transistor
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP122
FEATURES
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
SOT223 envelope and intended for
use as a line current interruptor in
telephone sets and for applications in
relay, high-speed and line
transformer drivers.
PINNING - SOT223
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
drain-source voltage
200
V
I
D
DC drain current
550
mA
R
DS(on)
drain-source on-resistance
2.5
V
GS(th)
gate-source threshold voltage
2
V
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
MAM054
4
1
2
3
Top view
s
d
g
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Device mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
200
V
V
GSO
gate-source voltage
open drain
-
20
V
I
D
DC drain current
-
550
mA
I
DM
peak drain current
-
3
A
P
tot
total power dissipation
up to T
amb
= 25
C (note 1)
-
1.5
W
T
stg
storage temperature range
-
65
150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-a
from junction to ambient (note 1)
83.3 K/W
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP122
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage
I
D
= 10
A; V
GS
= 0
200
-
-
V
I
DSS
drain-source leakage current
V
DS
= 160 V; V
GS
= 0
-
-
1
A
I
GSS
gate-source leakage current
V
GS
= 20 V; V
DS
= 0
-
-
100
nA
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
GS
= V
DS
0.4
-
2
V
R
DS(on)
drain-source on-resistance
I
D
= 750 mA; V
GS
= 10 V
-
1.6
2.5
I
D
= 20 mA; V
GS
= 2.4 V
-
2.5
-
Y
fs
transfer admittance
I
D
= 750 mA; V
DS
= 25 V
400
800
-
mS
C
iss
input capacitance
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
-
165
-
pF
C
oss
output capacitance
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
-
40
-
pF
C
rss
feedback capacitance
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
-
9
-
pF
Switching times (see Figs 2 and 3)
t
on
turn-on time
I
D
= 750 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
-
-
35
ns
t
off
turn-off time
I
D
= 750 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
-
-
50
ns
Fig.2 Switching times test circuit.
V
DD
= 50 V.
handbook, halfpage
MBB691
50
VDD = 50 V
ID
10 V
0 V
Fig.3 Input and output waveforms.
handbook, halfpage
MBB692
10 %
90 %
90 %
10 %
ton
toff
OUTPUT
INPUT
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP122
PACKAGE OUTLINE
UNIT
A
1
b
p
c
D
E
e
1
H
E
L
p
Q
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1
0.1
0.2
DIMENSIONS (mm are the original dimensions)
SOT223
96-11-11
97-02-28
w
M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v
M
A
A
B
B
c
y
0
2
4 mm
scale
A
X
1
3
2
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
April 1995
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP122
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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