DATA SHEET
Product specification
File under Discrete Semiconductors, SC13b
April 1995
DISCRETE SEMICONDUCTORS
BSP130
N-channel enhancement mode
vertical D-MOS transistor
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP130
FEATURES
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
SOT223 envelope, intended for use
as a line current interruptor in
telephone sets and for applications in
relay, high-speed and line
transformer drivers.
PINNING - SOT223
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source
voltage
-
300
V
I
D
DC drain current
-
300
mA
P
tot
total power
dissipation
up to T
amb
= 25
C
-
1.5
W
V
GSO
gate-source voltage open drain
-
20
V
R
DS(on)
drain-source
on-resistance
I
D
= 250 mA;
V
GS
= 10 V
-
8
V
GS(off)
gate-source cut-off
voltage
I
D
= 1 mA;
V
DS
= V
GS
0.8
2
V
Fig.1 Simplified outline and symbol.
Marking code
BSP130.
handbook, halfpage
MAM054
4
1
2
3
Top view
s
d
g
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP130
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL RESISTANCE
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm
2
.
STATIC CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
300
V
V
GSO
gate-source voltage
open drain
-
20
V
I
D
DC drain current
-
300
mA
I
DM
peak drain current
-
1.4
A
P
tot
total power dissipation
up to T
amb
= 25
C; note 1
-
1.5
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-a
from junction to ambient; note 1
83.3 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage
I
D
= 10
A; V
GS
= 0
300
-
-
V
I
GSS
gate-source leakage current
V
GS
= 20 V; V
DS
= 0
-
-
100
nA
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
0.8
-
2
V
R
DS(on)
drain-source on-resistance
I
D
= 20 mA; V
GS
= 2.4 V
-
7.9
14
I
D
= 250 mA; V
GS
= 10 V
-
6.7
8
I
DSS
drain-source leakage current
V
DS
= 240 V; V
GS
= 0
-
-
100
nA
Y
fs
transfer admittance
I
D
= 250 mA; V
DS
= 25 V
200
380
-
mS
C
iss
input capacitance
V
DS
= 25 V; V
GS
= 0;
f = 1 MHz
-
57
90
pF
C
oss
output capacitance
V
DS
= 25 V; V
GS
= 0;
f = 1 MHz
-
15
30
pF
C
rss
feedback capacitance
V
DS
= 25 V; V
GS
= 0;
f = 1 MHz
-
2.6
15
pF
Switching times (see Figs 2 and 3)
t
on
turn-on time
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
-
2.5
10
ns
t
off
turn-off time
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 10 to 0 V
-
17
30
ns
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP130
Fig.2 Switching times test circuit.
handbook, halfpage
MBB691
50
VDD = 50 V
ID
10 V
0 V
Fig.3 Input and output waveforms.
handbook, halfpage
MBB692
10 %
90 %
90 %
10 %
ton
toff
OUTPUT
INPUT
Fig.4 Power derating curve.
handbook, halfpage
0
50
100
Tj (
C)
Ptot
(W)
200
2
1.5
0.5
0
1
150
MRC218
Fig.5
Capacitance as a function of drain-source
voltage, typical values.
V
GS
= 0; f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
C
(pF)
VDS (V)
150
100
50
0
5
25
10
15
20
MRC214
Crss
Ciss
Coss
April 1995
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP130
Fig.6 Typical output characteristics.
T
j
= 25
C.
handbook, halfpage
0
1.2
0.8
VDS (V)
ID
(A)
0.4
0
4
8
12
MRC217
P = 1.5 W
4 V
3.5 V
3 V
2 V
5 V
2.5 V
VGS = 10 V
Fig.7 Typical transfer characteristics.
V
DS
= 10 V; T
j
= 25
C.
handbook, halfpage
0
4
12
1.2
0
0.4
0.8
ID
(A)
VGS (V)
8
MRC223
Fig.8
Drain-source on-resistance as a function of
drain current, typical values.
T
j
= 25
C.
handbook, halfpage
30
0
20
10
MRC219
RDSon
(
)
ID (A)
1
10
10
-
1
10
-
2
4 V
5 V
10 V
3 V 3.5 V
2.5 V
VGS = 2 V
Fig.9
Drain-source on-resistance as a function of
gate-source voltage, typical values.
V
DS
= 100 mV; T
j
= 25
C.
handbook, halfpage
0
10
25
0
5
10
15
20
2
4
6
RDSon
(
)
8
MRC220
VGS (V)
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