DATA SHEET
Product specification
1999 Jul 23
DISCRETE SEMICONDUCTORS
BSR12
PNP switching transistor
book, halfpage
M3D088
1999 Jul 23
2
Philips Semiconductors
Product specification
PNP switching transistor
BSR12
FEATURES
Low current (max. 100 mA)
Low voltage (max. 15 V).
APPLICATIONS
High-speed, saturated switching applications for
industrial service in thick and thin-film circuits.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
PINNING
MARKING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
TYPE NUMBER
MARKING CODE
BSR12
B5p
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
15
V
V
CEO
collector-emitter voltage
open base
-
-
15
V
I
CM
peak collector current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
C
-
250
mW
T
j
junction temperature
-
150
C
h
FE
DC current gain
I
C
=
-
10 mA; V
CE
=
-
1 V
30
-
I
C
=
-
50 mA; V
CE
=
-
1 V
30
120
f
T
transition frequency
f = 500 MHz; I
C
=
-
50 mA; V
CE
=
-
10 V
1.5
-
GHz
t
off
turn-off time
I
Con
=
-
30 mA; I
Bon
=
-
3 mA; I
Boff
= 3mA
-
30
ns
1999 Jul 23
3
Philips Semiconductors
Product specification
PNP switching transistor
BSR12
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on a ceramic substrate 8
10
0.7 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
15
V
V
CEO
collector-emitter voltage
open base
-
-
15
V
V
EBO
emitter-base voltage
open collector
-
-
3
V
I
C
collector current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
C
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1
500
K/W
1999 Jul 23
4
Philips Semiconductors
Product specification
PNP switching transistor
BSR12
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
= 300
s;
= 0.01.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
10 V
-
-
-
50
nA
I
E
= 0; V
CB
=
-
10 V; T
amb
= 125
C
-
-
-
5
A
I
CES
collector cut-off current
V
BE
= 0; V
CE
=
-
10 V
-
-
-
50
nA
V
(BR)CBO
breakdown voltage
I
E
= 0; I
C
=
-
10
A
-
15
-
-
V
V
(BR)CES
breakdown voltage
V
BE
= 0; I
C
=
-
10
A
-
15
-
-
V
V
(BR)EBO
breakdown voltage
I
C
= 0; I
E
=
-
100
A
-
3
-
-
V
V
CEOsust
collector-emitter sustaining
voltage
I
B
= 0; I
C
=
-
10 mA
-
15
-
-
V
V
CEsat
collector-emitter saturation
voltage
I
C
=
-
10 mA; I
B
=
-
1 mA; note 1
-
-
-
130
mV
I
C
=
-
50 mA; I
B
=
-
5 mA; note 1
-
-
180
-
270
mV
I
C
=
-
100 mA; I
B
=
-
10 mA; note 1
-
-
-
450
mV
V
BEsat
base-emitter saturation
voltage
I
C
=
-
10 mA; I
B
=
-
1 mA; note 1
-
725
-
-
920
mV
I
C
=
-
50 mA; I
B
=
-
5 mA; note 1
-
800
-
-
1150
mV
I
C
=
-
100 mA; I
B
=
-
10 mA; note 1
-
900
-
-
1500
mV
h
FE
DC current gain
I
C
=
-
1 mA; V
CE
=
-
1 V; note 1
30
-
-
I
C
=
-
10 mA; V
CE
=
-
1 V; note 1
30
-
-
I
C
=
-
50 mA; V
CE
=
-
1 V; note 1
30
-
120
I
C
=
-
50 mA; V
CE
=
-
1 V;
T
amb
= 55
C; note 1
30
-
-
I
C
=
-
100 mA; V
CE
=
-
1 V; note 1
20
-
-
f
T
transition frequency
IC =
-
50 mA; V
CE
=
-
10 V;
f = 500 MHz
1.5
-
-
GHz
C
c
collector capacitance
I
E
= I
e
= 0; V
CB
=
-
5 V
-
-
4.5
pF
C
e
emitter capacitance
I
C
= I
c
= 0; V
EB
=
-
0.5 V
-
-
6
pF
Switching time (see Fig.2)
t
on
turn-on time
V
i
= -
6.85 V; V
BB
= 0 V;
I
Con
=
-
30 mA; I
Bon
=
-
3.0 mA
-
-
20
ns
t
off
turn-off time
V
i
=
11.7 V; V
BB
= -
9.85 V;
I
Con
=
-
30 mA; I
Bon
=
-
3 mA;
I
Boff
= 3 mA
-
-
30
ns
1999 Jul 23
5
Philips Semiconductors
Product specification
PNP switching transistor
BSR12
handbook, halfpage
MGS460
50
R2
R3
C
VBB
R1
VCC =
-
3 V
Vi
DUT
Vo
handbook, full pagewidth
20
70
hFE
MGS461
30
40
50
60
-
10
-
1
-
1
-
10
-
10
3
-
10
2
IC (mA)
typ
Fig.2 Test circuit for switching times.
R1 = 94
; R2 = 1 k
; R3 = 2 k
; C = 0.1
F.
Pulse generator: Pulse duration t
p
= 400 ns. Rise time t
r
< 1 ns. Output impedance Z
O
= 50
.
Sampling scope: Rise time t
r
< 1 ns. Input impedance Z
i
= 100 k
.
Fig.3 DC current gain; typical values.
V
CE
=
-
1 V; T
amb
= 25
C.
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