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Электронный компонент: BSR18A

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DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 28
DISCRETE SEMICONDUCTORS
BSR18A
PNP switching transistor
book, halfpage
M3D088
1997 May 28
2
Philips Semiconductors
Product specification
PNP switching transistor
BSR18A
FEATURES
Low current (max. 100 mA)
Low voltage (max. 40 V).
APPLICATIONS
High-speed saturated switching.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complement: BSR17A.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
MARKING
TYPE NUMBER
MARKING CODE
BSR18A
T92
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
40
V
V
CEO
collector-emitter voltage
open base
-
-
40
V
I
C
collector current (DC)
-
-
100
mA
P
tot
total power dissipation
T
amb
25
C
-
250
mW
h
FE
DC current gain
I
C
=
-
10 mA; V
CE
=
-
1 V
100
300
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
20 V; f = 100 MHz
250
-
MHz
t
off
turn-off time
I
Con
=
-
10 mA; I
Bon
=
-
1 mA; I
Boff
= 1 mA
-
300
ns
1997 May 28
3
Philips Semiconductors
Product specification
PNP switching transistor
BSR18A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
40
V
V
CEO
collector-emitter voltage
open base
-
-
40
V
V
EBO
emitter-base voltage
open collector
-
-
6
V
I
C
collector current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
200
mA
I
BM
peak base current
-
-
100
mA
P
tot
total power dissipation
T
amb
25
C
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
1997 May 28
4
Philips Semiconductors
Product specification
PNP switching transistor
BSR18A
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.01.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
30 V
-
-
50
nA
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
6 V
-
-
50
nA
h
FE
DC current gain
V
CE
=
-
1 V; note 1; see Fig.2
I
C
=
-
0.1 mA
60
-
I
C
=
-
1 mA
80
-
I
C
=
-
10 mA
100
300
I
C
=
-
50 mA
60
-
I
C
=
-
100 mA
30
-
V
CEsat
collector-emitter saturation voltage
I
C
=
-
10 mA; I
B
=
-
1 mA; note 1
-
-
200
mV
I
C
=
-
50 mA; I
B
=
-
5 mA; note 1
-
-
200
mV
V
BEsat
base-emitter saturation voltage
I
C
=
-
10 mA; I
B
=
-
1 mA; note 1
-
650
-
850
mV
I
C
=
-
50 mA; I
B
=
-
5 mA; note 1
-
-
950
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
5 V; f = 1 MHz
-
4.5
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
=
-
500 mV; f = 1 MHz
-
10
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
20 V; f = 100 MHz
250
-
MHz
F
noise figure
I
C
=
-
100
A; V
CE
=
-
5 V; R
S
= 1 k
;
f = 10 Hz to 15.7 kHz
-
4
dB
Switching times (between 10% and 90% levels); see Fig.3
t
on
turn-on time
I
Con
=
-
10 mA; I
Bon
=
-
1 mA; I
Boff
= 1 mA
-
65
ns
t
d
delay time
-
35
ns
t
r
rise time
-
35
ns
t
off
turn-off time
-
300
ns
t
s
storage time
-
225
ns
t
f
fall time
-
75
ns
1997 May 28
5
Philips Semiconductors
Product specification
PNP switching transistor
BSR18A
Fig.2 DC current gain; typical value.
handbook, full pagewidth
0
80
160
hFE
40
120
MGD835
-
10
-
2
-
10
-
1
-
1
IC (mA)
-
10
-
10
2
-
10
3
V
CE
=
-
1 V.
V
i
=
-
5 V; T = 500
s; t
p
= 10
s; t
r
= t
f
3 ns.
R1 = 56
; R2 = 2.5 k
; R
B
= 3.9 k
; R
C
= 270
.
V
BB
= 1.9 V; V
CC
=
-
3 V.
Oscilloscope input impedance Z
i
= 50
.
Fig.3 Test circuit for switching times.
handbook, full pagewidth
RC
R2
R1
DUT
MGD624
Vo
RB
(probe)
450
(probe)
450
oscilloscope
oscilloscope
VBB
Vi
VCC
1997 May 28
6
Philips Semiconductors
Product specification
PNP switching transistor
BSR18A
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
1997 May 28
7
Philips Semiconductors
Product specification
PNP switching transistor
BSR18A
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1997
SCA54
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117047/00/02/pp8
Date of release: 1997 May 28
Document order number:
9397 750 02187