DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 21
DISCRETE SEMICONDUCTORS
BSR19; BSR19A
NPN high-voltage transistors
ok, halfpage
M3D088
1997 Apr 21
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSR19; BSR19A
FEATURES
Low current (max. 300 mA)
High voltage (max. 160 V).
APPLICATIONS
General purpose switching and amplification
Especially used for telephony applications.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complements: BSR20 and BSR20A.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
MARKING
TYPE NUMBER
MARKING CODE
BSR19
U35
BSR19A
U36
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BSR19
-
160
V
BSR19A
-
180
V
V
CEO
collector-emitter voltage
open base
BSR19
-
140
V
BSR19A
-
160
V
I
CM
peak collector current
-
600
mA
P
tot
total power dissipation
T
amb
25
C
-
250
mW
h
FE
DC current gain
I
C
= 10 mA; V
CE
= 5 V
BSR19
60
-
BSR19A
80
-
f
T
transition frequency
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
100
300
MHz
1997 Apr 21
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSR19; BSR19A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BSR19
-
160
V
BSR19A
-
180
V
V
CEO
collector-emitter voltage
open base
BSR19
-
140
V
BSR19A
-
160
V
V
EBO
emitter-base voltage
open collector
-
6
V
I
C
collector current (DC)
-
300
mA
I
CM
peak collector current
-
600
mA
I
B
base current (DC)
-
100
mA
P
tot
total power dissipation
T
amb
25
C
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient note 1
500
K/W
1997 Apr 21
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSR19; BSR19A
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
BSR19
I
E
= 0; V
CB
= 100 V
-
100
nA
I
E
= 0; V
CB
= 100 V; T
amb
= 100
C
-
100
A
I
CBO
collector cut-off current
BSR19A
I
E
= 0; V
CB
= 120 V
-
50
nA
I
E
= 0; V
CB
= 120 V; T
amb
= 100
C
-
50
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 4 V
-
50
nA
h
FE
DC current gain
I
C
= 1 mA; V
CE
= 5 V
BSR19
60
-
BSR19A
80
-
h
FE
DC current gain
I
C
= 10 mA; V
CE
= 5 V
BSR19
60
250
BSR19A
80
250
h
FE
DC current gain
I
C
= 50 mA; V
CE
= 5 V
BSR19
20
-
BSR19A
30
-
V
CEsat
collector-emitter saturation voltage
I
C
= 10 mA; I
B
= 1 mA
-
150
mV
V
CEsat
collector-emitter saturation voltage
I
C
= 50 mA; I
B
= 5 mA
BSR19
-
250
mV
BSR19A
-
200
mV
C
c
collector capacitance
I
E
= 0; V
CB
= 10 V; f = 1 MHz
-
6
pF
f
T
transition frequency
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
100
300
MHz
1997 Apr 21
5
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSR19; BSR19A
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
120
160
40
80
MGD814
10
-
1
1
10
10
2
10
3
hFE
IC mA
VCE = 5 V
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