DATA SHEET
Product specification
Supersedes data of 1997 Sep 04
1999 Apr 15
DISCRETE SEMICONDUCTORS
BSS64
NPN high-voltage transistor
book, halfpage
M3D088
1999 Apr 15
2
Philips Semiconductors
Product specification
NPN high-voltage transistor
BSS64
FEATURES
Low current (max. 100 mA)
High voltage (max. 80 V).
APPLICATIONS
High-voltage general purpose and switching
applications
Intended for application in thick and thin-film circuits.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: BSS63.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE
(1)
BSS64
AM
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
120
V
V
CEO
collector-emitter voltage
open base
-
80
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
250
mA
I
BM
peak base current
-
100
mA
P
tot
total power dissipation
T
amb
25
C
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 15
3
Philips Semiconductors
Product specification
NPN high-voltage transistor
BSS64
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 90 V
-
-
100
nA
I
E
= 0; V
CB
= 90 V; T
j
= 150
C
-
-
50
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
0.5
200
nA
h
FE
DC current gain
I
C
= 1 mA; V
CE
= 1 V
-
60
-
I
C
= 10 mA; V
CE
= 1 V
20
80
-
I
C
= 20 mA; V
CE
= 1 V
-
55
-
V
CEsat
collector-emitter saturation
voltage
I
C
= 4 mA; I
B
= 400
A
-
-
150
mV
I
C
= 50 mA; I
B
= 15 mA
-
-
200
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
3
-
pF
f
T
transition frequency
I
C
= 4 mA; V
CE
= 10 V; f = 100 MHz 60
100
-
MHz
1999 Apr 15
4
Philips Semiconductors
Product specification
NPN high-voltage transistor
BSS64
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
1999 Apr 15
5
Philips Semiconductors
Product specification
NPN high-voltage transistor
BSS64
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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