DATA SHEET
Product specification
Supersedes data of 1997 Apr 16
1999 Apr 26
DISCRETE SEMICONDUCTORS
BST50; BST51; BST52
NPN Darlington transistors
book, halfpage
M3D109
1999 Apr 26
2
Philips Semiconductors
Product specification
NPN Darlington transistors
BST50; BST51; BST52
FEATURES
High current (max. 0.5 A)
Low voltage (max. 80 V)
Integrated diode and resistor.
APPLICATIONS
Industrial switching applications such as:
Print hammer
Solenoid
Relay and lamp driving.
DESCRIPTION
NPN Darlington transistor in a SOT89 plastic package.
PNP complements: BST60, BST61 and BST62.
MARKING
TYPE NUMBER
MARKING CODE
BST50
AS1
BST51
AS2
BST52
AS3
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1 Simplified outline (SOT89) and symbol.
handbook, halfpage
1
2
3
MAM327
Bottom view
3
2
1
1999 Apr 26
3
Philips Semiconductors
Product specification
NPN Darlington transistors
BST50; BST51; BST52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
"Thermal considerations for SOT89 in the General Part of associated Handbook".
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BST50
-
60
V
BST51
-
80
V
BST52
-
90
V
V
CES
collector-emitter voltage
V
BE
= 0
BST50
-
45
V
BST51
-
60
V
BST52
-
80
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
0.5
A
I
CM
peak collector current
-
1.5
A
I
B
base current (DC)
-
100
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
1.3
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 26
4
Philips Semiconductors
Product specification
NPN Darlington transistors
BST50; BST51; BST52
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
"Thermal considerations for SOT89 in the General Part of associated Handbook".
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
96
K/W
R
th j-s
thermal resistance from junction to soldering point
16
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
collector cut-off current
BST50
V
BE
= 0; V
CE
= 45 V
-
-
50
nA
BST51
V
BE
= 0; V
CE
= 60 V
-
-
50
nA
BST52
V
BE
= 0; V
CE
= 80 V
-
-
50
nA
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 4 V
-
-
50
nA
h
FE
DC current gain
V
CE
= 10 V; note 1; (see Fig.2)
I
C
= 150 mA
1000
-
-
I
C
= 500 mA
2000
-
-
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
= 0.5 mA
-
-
1.3
V
I
C
= 500 mA; I
B
= 0.5 mA;
T
j
= 150
C
-
-
1.3
V
V
BEsat
base-emitter saturation voltage
I
C
= 500 mA; I
B
= 0.5 mA
-
-
1.9
V
f
T
transition frequency
I
C
= 500 mA; V
CE
= 5 V;
f = 100 MHz
-
200
-
MHz
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
turn-on time
I
Con
= 500 mA; I
Bon
= 0.5 mA;
I
Boff
=
-
0.5 mA
-
400
-
ns
t
off
turn-off time
-
1500
-
ns
1999 Apr 26
5
Philips Semiconductors
Product specification
NPN Darlington transistors
BST50; BST51; BST52
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
5000
1000
2000
3000
4000
MGD838
10
-
1
1
IC (mA)
hFE
10
10
2
10
3
V
CE
= 10 V.
Fig.3 Test circuit for switching times.
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB
(probe)
450
(probe)
450
oscilloscope
oscilloscope
VBB
Vi
VCC
V
i
= 10 V; T = 200
s; t
p
= 6
s; t
r
= t
f
3 ns.
R1 = 56
; R2 = 10 k
; R
B
= 10 k
; R
C
= 18
.
V
BB
=
-
1.8 V; V
CC
= 10.7 V.
Oscilloscope: input impedance Z
i
= 50
.
PDF 
ZIP