Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 23
DISCRETE SEMICONDUCTORS
BSX45; BSX46; BSX47
NPN medium power transistors
M3D111
1997 Apr 23
2
Philips Semiconductors
Product specification
NPN medium power transistors
BSX45; BSX46; BSX47
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V).
APPLICATIONS
General industrial applications.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
handbook, halfpage
3
1
2
MAM317
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BSX45
-
-
80
V
BSX46
-
-
100
V
BSX47
-
-
120
V
V
CEO
collector-emitter voltage
open base
BSX45
-
-
40
V
BSX46
-
-
60
V
BSX47
-
-
80
V
I
CM
peak collector current
-
-
1.5
A
P
tot
total power dissipation
T
case
25
C
-
-
6.25
W
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 1 V
BSX45-10; BSX46-10; BSX47-10
63
100
160
BSX45-16; BSX46-16; BSX47-16
100
160
250
f
T
transition frequency
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz 50
-
-
MHz
1997 Apr 23
3
Philips Semiconductors
Product specification
NPN medium power transistors
BSX45; BSX46; BSX47
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BSX45
-
80
V
BSX46
-
100
V
BSX47
-
120
V
V
CEO
collector-emitter voltage
open base
BSX45
-
40
V
BSX46
-
60
V
BSX47
-
80
V
V
EBO
emitter-base voltage
open collector
-
7
V
I
C
collector current (DC)
-
1
A
I
CM
peak collector current
-
1.5
A
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
case
25
C
-
6.25
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
200
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
200
K/W
R
th j-c
thermal resistance from junction to case
28
K/W
1997 Apr 23
4
Philips Semiconductors
Product specification
NPN medium power transistors
BSX45; BSX46; BSX47
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
CBO
collector cut-off current
BSX45; BSX46
I
E
= 0; V
CB
= 60 V
-
-
30
nA
I
E
= 0; V
CB
= 60 V; T
amb
= 150
C
-
-
10
A
I
CBO
collector cut-off current
BSX47
I
E
= 0; V
CB
= 80 V
-
-
30
nA
I
E
= 0; V
CB
= 80 V; T
amb
= 150
-
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
-
10
nA
h
FE
DC current gain
I
C
= 100
A; V
CE
= 1 V
BSX45-10; BSX46-10; BSX47-10
15
40
-
BSX45-16; BSX46-16
25
90
-
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 1 V
BSX45-10; BSX46-10; BSX47-10
63
100
160
BSX45-16; BSX46-16; BSX47-16
100
160
250
h
FE
DC current gain
I
C
= 500 mA; V
CE
= 1 V
BSX45-10; BSX46-10; BSX47-10
25
40
-
BSX45-16; BSX46-16
35
60
-
h
FE
DC current gain
I
C
= 1 A; V
CE
= 1 V
BSX45-10; BSX46-10; BSX47-10
-
20
-
BSX45-16; BSX46-16
-
30
-
V
CEsat
collector-emitter saturation voltage
I
C
= 1 A; I
B
= 100 mA
BSX45; BSX46
-
-
1
V
V
CEsat
collector-emitter saturation voltage
I
C
= 500 mA; I
B
= 25 mA
BSX47
-
-
900
mV
V
BE
base-emitter voltage
I
C
= 100 mA; V
CE
= 1 V
-
-
1
V
I
C
= 500 mA; V
CE
= 1 V
0.75
-
1.5
V
I
C
= 1 A; V
CE
= 1 V
-
-
2
V
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
BSX45
-
-
25
pF
BSX46
-
-
20
pF
BSX47
-
-
15
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
-
80
pF
f
T
transition frequency
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
50
-
-
MHz
F
noise figure
I
C
= 100
A; V
CE
= 5 V; R
S
= 1 k
;
f = 1 kHz; B = 200 Hz
-
3.5
-
dB
Switching times (between 10% and 90% levels)
t
on
turn-on time
I
Con
= 100 mA; I
Bon
= 5 mA;
I
Boff
=
-
5 mA
-
-
200
ns
t
off
turn-off time
-
-
850
ns
1997 Apr 23
5
Philips Semiconductors
Product specification
NPN medium power transistors
BSX45; BSX46; BSX47
PACKAGE OUTLINE
UNIT
a
b
D
D
1
j
k
L
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
6.60
6.35
0.48
0.41
9.39
9.08
8.33
8.18
0.85
0.75
0.95
0.75
14.2
12.7
0.2
45
DIMENSIONS (mm are the original dimensions)
SOT5/11
TO-39
97-04-11
k
j
D
A
L
seating plane
b
D
1
0
5
10 mm
scale
A
5.08
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
A
w
A
M
M
B
M
B
a
1
2
3
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