Philips Semiconductors
Product specification
Triacs
BT138X series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a full pack
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
plastic envelope, intended for use in
applications
requiring
high
BT138X-
500
600
800
bidirectional transient and blocking
BT138X-
500F
600F
800F
voltage capability and high thermal
BT138X-
500G
600G
800G
cycling
performance.
Typical
V
DRM
Repetitive peak off-state
500
600
800
V
applications include motor control,
voltages
industrial
and
domestic
lighting,
I
T(RMS)
RMS on-state current
12
12
12
A
heating and static switching.
I
TSM
Non-repetitive peak on-state
95
95
95
A
current
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
-800
V
DRM
Repetitive peak off-state
-
500
1
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave; T
hs
56 C
-
12
A
I
TSM
Non-repetitive peak
full sine wave; T
j
= 25 C prior to
on-state current
surge
t = 20 ms
-
95
A
t = 16.7 ms
-
105
A
I
2
t
I
2
t for fusing
t = 10 ms
-
45
A
2
s
dI
T
/dt
Repetitive rate of rise of
I
TM
= 20 A; I
G
= 0.2 A;
on-state current after
dI
G
/dt = 0.2 A/
s
triggering
T2+ G+
-
50
A/
s
T2+ G-
-
50
A/
s
T2- G-
-
50
A/
s
T2- G+
-
10
A/
s
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
T1
T2
G
1 2 3
case
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT138X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance
full or half cycle
junction to heatsink
with heatsink compound
-
-
4.0
K/W
without heatsink compound
-
-
5.5
K/W
R
th j-a
Thermal resistance
in free air
-
55
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BT138X-
...
...F
...G
I
GT
Gate trigger current
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
-
5
35
25
50
mA
T2+ G-
-
8
35
25
50
mA
T2- G-
-
10
35
25
50
mA
T2- G+
-
22
70
70
100
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
-
7
40
40
60
mA
T2+ G-
-
20
60
60
90
mA
T2- G-
-
8
40
40
60
mA
T2- G+
-
10
60
60
90
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
-
6
30
30
60
mA
V
T
On-state voltage
I
T
= 15 A
-
1.4
1.65
V
V
GT
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
-
0.7
1.5
V
V
D
= 400 V; I
T
= 0.1 A;
0.25
0.4
-
V
T
j
= 125 C
I
D
Off-state leakage current
V
D
= V
DRM(max)
;
-
0.1
0.5
mA
T
j
= 125 C
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT138X series
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BT138X-
...
...F
...G
dV
D
/dt
Critical rate of rise of
V
DM
= 67% V
DRM(max)
;
100
50
200
250
-
V/
s
off-state voltage
T
j
= 125 C; exponential
waveform; gate open
circuit
dV
com
/dt
Critical rate of change of
V
DM
= 400 V; T
j
= 95 C;
-
-
10
20
-
V/
s
commutating voltage
I
T(RMS)
= 12 A;
dI
com
/dt = 5.4 A/ms; gate
open circuit
t
gt
Gate controlled turn-on
I
TM
= 16 A; V
D
= V
DRM(max)
;
-
-
-
2
-
s
time
I
G
= 0.1 A; dI
G
/dt = 5 A/
s
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT138X series
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus heatsink temperature T
hs
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
hs
56C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
5
10
15
0
5
10
15
20
= 180
120
90
60
30
BT138
IT(RMS) / A
Ptot / W
Ths(max) / C
125
105
85
65
45
1
-50
0
50
100
150
0
5
10
15
BT138X
56 C
Ths / C
IT(RMS) / A
10us
100us
1ms
10ms
100ms
10
100
1000
BT138
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
T2- G+ quadrant
0.01
0.1
1
10
0
5
10
15
20
25
BT138
surge duration / s
IT(RMS) / A
1
10
100
1000
0
20
40
60
80
100
BT138
Number of cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT138X series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-hs
, versus
pulse width t
p
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
T
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT138
Tj / C
T2+ G+
T2+ G-
T2- G-
T2- G+
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
BT138
VT / V
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.175 V
Rs = 0.0316 Ohms
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
BT138
tp / s
Zth j-hs (K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
t
p
P
t
D
bidirectional
unidirectional
with heatsink compound
without heatsink compound
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IH(Tj)
IH(25C)
0
50
100
150
1
10
100
1000
5.4
9.1
Tj / C
7
dV/dt (V/us)
4.2
dIcom/dt =
15 A/ms
12
off-state dV/dt limit
BT138...G SERIES
BT138 SERIES
BT138...F SERIES
September 1997
5
Rev 1.200
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