Philips Semiconductors
Product specification
Thyristors
BT148W series
logic level
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated,
sensitive
gate
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
thyristors
in
a
plastic
envelope
suitable
for
surface
mounting,
BT148W-
400R
500R
600R
intended for use in general purpose
V
DRM
,
Repetitive peak off-state
400
500
600
V
switching
and
phase
control
V
RRM
voltages
applications.
These
devices
are
I
T(AV)
Average on-state current
0.6
0.6
0.6
A
intended to be interfaced directly to
I
T(RMS)
RMS on-state current
1
1
1
A
microcontrollers,
logic
integrated
I
TSM
Non-repetitive peak on-state
10
10
10
A
circuits and other low power gate
current
trigger circuits.
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-400R -500R -600R
V
DRM
, V
RRM
Repetitive peak off-state
-
400
1
500
1
600
1
V
voltages
I
T(AV)
Average on-state current
half sine wave; T
sp
112 C
-
0.6
A
I
T(RMS)
RMS on-state current
all conduction angles
-
1
A
I
TSM
Non-repetitive peak
half sine wave; T
j
= 25 C prior to
on-state current
surge
t = 10 ms
-
10
A
t = 8.3 ms
-
11
A
I
2
t
I
2
t for fusing
t = 10 ms
-
0.5
A
2
s
dI
T
/dt
Repetitive rate of rise of
I
TM
= 4 A; I
G
= 200 mA;
-
50
A/
s
on-state current after
dI
G
/dt = 200 mA/
s
triggering
I
GM
Peak gate current
-
1
A
V
GM
Peak gate voltage
-
5
V
V
RGM
Peak reverse gate voltage
-
5
V
P
GM
Peak gate power
-
1.2
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.12
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
2
C
temperature
a
k
g
4
1
2
3
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
2 Note: Operation above 110C may require the use of a gate to cathode resistor of 1k
or less.
October 1997
1
Rev 1.300
Philips Semiconductors
Product specification
Thyristors
BT148W series
logic level
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-sp
Thermal resistance
-
-
15
K/W
junction to solder point
R
th j-a
Thermal resistance
pcb mounted, minimum footprint
-
156
-
K/W
junction to ambient
pcb mounted, pad area as in fig:14
-
70
-
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D
= 12 V; I
T
= 0.1 A
-
50
200
A
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
-
0.17
10
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
-
0.10
6
mA
V
T
On-state voltage
I
T
= 2 A
-
1.3
1.5
V
V
GT
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
-
0.4
1.5
V
V
R
= V
RRM(max)
; I
T
= 0.1 A; T
j
= 110 C
0.1
0.2
-
V
I
D
, I
R
Off-state leakage current
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D
/dt
Critical rate of rise of
V
DM
= 67% V
DRM(max)
; T
j
= 125 C;
-
50
-
V/
s
off-state voltage
exponential waveform; R
GK
= 100
t
gt
Gate controlled turn-on
I
TM
= 4 A; V
D
= V
DRM(max)
; I
G
= 5 mA;
-
2
-
s
time
dI
G
/dt = 0.2 A/
s
t
q
Circuit commutated
V
D
= 67% V
DRM(max)
; T
j
= 125 C; I
TM
= 2 A;
-
100
-
s
turn-off time
V
R
= 35 V; dI
TM
/dt = 30 A/
s;
dV
D
/dt = 2 V/
s; R
GK
= 1 k
October 1997
2
Rev 1.300
Philips Semiconductors
Product specification
Thyristors
BT148W series
logic level
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus solder point temperature T
sp
.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
sp
112C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0.2
0.4
0.6
0.8
1
a = 1.57
1.9
2.2
2.8
4
BT148W
IF(AV) / A
Ptot / W
125
122
119
116
113
110
Tsp(max) / C
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
a
1
10
100
1000
0
2
4
6
8
10
12
BT148W
Number of cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
1
10
100
1000
BT148W
10us
100us
1ms
10ms
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
0.01
0.1
1
10
0
0.5
1
1.5
2
BT134W
surge duration / s
IT(RMS) / A
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
BT134W
Tsp / C
IT(RMS) / A
112 C
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT151
Tj / C
VGT(Tj)
VGT(25 C)
October 1997
3
Rev 1.300
Philips Semiconductors
Product specification
Thyristors
BT148W series
logic level
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-sp
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT148
Tj / C
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
BT148W
VT / V
IT / A
Vo = 1.107 V
Rs = 0.14 Ohms
typ
max
Tj = 125 C
Tj = 25 C
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT145
Tj / C
IL(Tj)
IL(25 C)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp / s
0.01
0.1
1
10
Zth j-sp (K/W)
100
t
p
P
t
D
BT148W
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT145
Tj / C
IH(Tj)
IH(25 C)
0
50
100
150
1
10
100
1000
Tj / C
dVD/dt (V/us)
RGK = 100 ohms
October 1997
4
Rev 1.300
Philips Semiconductors
Product specification
Thyristors
BT148W series
logic level
MOUNTING INSTRUCTIONS
Dimensions in mm.
Fig.13. soldering pattern for surface mounting SOT223.
PRINTED CIRCUIT BOARD
Dimensions in mm.
Fig.14. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35
m thick).
3.8
min
6.3
2.3
4.6
1.5
min
1.5
min
1.5
min
(3x)
36
60
9
10
4.6
18
4.5
7
15
50
October 1997
5
Rev 1.300
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