Philips Semiconductors
Product specification
Thyristors
BT152 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated thyristors in a plastic
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
envelope,
intended
for
use
in
applications
requiring
high
BT152-
400R
600R
800R
bidirectional
blocking
voltage
V
DRM
,
Repetitive peak off-state
450
650
800
V
capability and high thermal cycling
V
RRM
voltages
performance.
Typical
applications
I
T(AV)
Average on-state current
13
13
13
A
include motor control, industrial and
I
T(RMS)
RMS on-state current
20
20
20
A
domestic lighting, heating and static
I
TSM
Non-repetitive peak on-state
200
200
200
A
switching.
current
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-400R -600R -800R
V
DRM
Repetitive peak off-state
-
450
1
650
1
800
V
voltages
I
T(AV)
Average on-state current
half sine wave; T
mb
103 C
-
13
A
I
T(RMS)
RMS on-state current
all conduction angles
-
20
A
I
TSM
Non-repetitive peak
half sine wave; T
j
= 25 C prior to
on-state current
surge
t = 10 ms
-
200
A
t = 8.3 ms
-
220
A
I
2
t
I
2
t for fusing
t = 10 ms
-
200
A
2
s
dI
T
/dt
Repetitive rate of rise of
I
TM
= 50 A; I
G
= 0.2 A;
-
200
A/
s
on-state current after
dI
G
/dt = 0.2 A/
s
triggering
I
GM
Peak gate current
-
5
A
V
GM
Peak gate voltage
-
5
V
V
RGM
Peak reverse gate voltage
-
5
V
P
GM
Peak gate power
-
20
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
a
k
g
1 2 3
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
March 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
BT152 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
-
-
1.1
K/W
junction to mounting base
R
th j-a
Thermal resistance
in free air
-
60
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D
= 12 V; I
T
= 0.1 A
-
3
32
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
-
25
80
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
-
15
60
mA
V
T
On-state voltage
I
T
= 40 A
-
1.4
1.75
V
V
GT
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
-
0.6
1.5
V
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 125 C
0.25
0.4
-
V
I
D
, I
R
Off-state leakage current
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 C
-
0.2
1.0
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D
/dt
Critical rate of rise of
V
DM
= 67% V
DRM(max)
; T
j
= 125 C;
200
300
-
V/
s
off-state voltage
exponential waveform gate open circuit
t
gt
Gate controlled turn-on
V
D
= V
DRM(max)
; I
G
= 0.1 A; dI
G
/dt = 5 A/
s;
-
2
-
s
time
I
TM
= 40 A
t
q
Circuit commutated
V
D
= 67% V
DRM(max)
; T
j
= 125 C;
-
70
-
s
turn-off time
I
TM
= 50 A; V
R
= 25 V; dI
TM
/dt = 30 A/
s;
dV
D
/dt = 50 V/
s; R
GK
= 100
March 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
BT152 series
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
103C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
5
10
15
0
5
10
15
20
25
a = 1.57
1.9
2.2
2.8
4
BT152
IT(AV) / A
Ptot / W
Tmb(max) / C
125
119.5
114
108.5
103
97.5
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
a
1
10
100
1000
0
50
100
150
200
250
BT152
Number of half cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
10
100
1000
BT152
10us
100us
1ms
10ms
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01
0.1
1
10
0
10
20
30
40
50
BT152
surge duration / s
IT(RMS) / A
-50
0
50
100
150
0
5
10
15
20
25
BT152
Tmb / C
IT(RMS) / A
103 C
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT151
Tj / C
VGT(Tj)
VGT(25 C)
March 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
BT152 series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT152
Tj / C
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
0
10
20
30
40
50
typ
BT152
VT / V
IT / A
max
Tj = 125 C
Tj = 25 C
Vo = 1.12 V
Rs = 0.015 ohms
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT145
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
BT152
tp / s
Zth j-mb (K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
t
p
P
t
D
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT152
Tj / C
IH(Tj)
IH(25 C)
0
50
100
150
10
100
1000
10000
Tj / C
dVD/dt (V/us)
gate open circuit
RGK = 100 Ohms
March 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
BT152 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
March 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
BT152 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1997
6
Rev 1.200
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