DATA SHEET
Product specification
December 1998
DISCRETE SEMICONDUCTORS
BTA204S series D, E and F
BTA204M series D, E and F
Three quadrant triacs guaranteed
commutation
December 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
triacs in a plastic envelope suitable for
surface mounting, intended for use in
BTA204S (or BTA204M)-
500D
600D
-
motor control circuits or with other
BTA204S (or BTA204M)-
500E
600E
800E
highly inductive loads. These devices
BTA204S (or BTA204M)-
500F
600F
800F
balance
the
requirements
of
V
DRM
Repetitive peak
500
600
800
V
commutation performance and gate
off-state voltages
sensitivity. The "sensitive gate" E
I
T(RMS)
RMS on-state current
4
4
4
A
series and "logic level" D series are
I
TSM
Non-repetitive peak on-state
25
25
25
A
intended for interfacing with low power
current
drivers, including micro controllers.
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
Standard Alternative
NUMBER
S
M
1
MT1
gate
2
MT2
MT2
3
gate
MT1
tab
MT2
MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
-800
V
DRM
Repetitive peak off-state
-
500
1
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave;
-
4
A
T
mb
107 C
I
TSM
Non-repetitive peak
full sine wave;
on-state current
T
j
= 25 C prior to
surge
t = 20 ms
-
25
A
t = 16.7 ms
-
27
A
I
2
t
I
2
t for fusing
t = 10 ms
-
3.1
A
2
s
dI
T
/dt
Repetitive rate of rise of
I
TM
= 6 A; I
G
= 0.2 A;
100
A/
s
on-state current after
dI
G
/dt = 0.2 A/
s
triggering
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms
-
0.5
W
period
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
1
2
3
tab
T1
T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
s.
December 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
full cycle
-
-
3.0
K/W
junction to mounting base
half cycle
-
-
3.7
K/W
R
th j-a
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14
-
75
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA204S (or BTA204M)-
...D
...E
...F
I
GT
Gate trigger current
2
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
-
-
5
10
25
mA
T2+ G-
-
-
5
10
25
mA
T2- G-
-
-
5
10
25
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
-
-
6
12
20
mA
T2+ G-
-
-
9
18
30
mA
T2- G-
-
-
6
12
20
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
-
-
6
12
20
mA
V
T
On-state voltage
I
T
= 5 A
-
1.4
1.7
V
V
GT
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
-
0.7
1.5
V
V
D
= 400 V; I
T
= 0.1 A;
0.25
0.4
-
V
T
j
= 125 C
I
D
Off-state leakage
V
D
= V
DRM(max)
; T
j
= 125 C
-
0.1
0.5
mA
current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA204S (or BTA204M)-
...D
...E
...F
dV
D
/dt
Critical rate of rise of
V
DM
= 67% V
DRM(max)
;
20
30
50
-
-
V/
s
off-state voltage
T
j
= 125 C; exponential
waveform; gate open circuit
dI
com
/dt
Critical rate of change
V
DM
= 400 V; T
j
= 125 C;
1.0
2.0
2.5
-
-
A/ms
of commutating current
I
T(RMS)
= 4 A;
dV
com
/dt = 20V/
s; gate
open circuit
dI
com
/dt
Critical rate of change
V
DM
= 400 V; T
j
= 125 C;
5.0
-
-
-
-
A/ms
of commutating current
I
T(RMS)
= 4 A;
dV
com
/dt = 0.1V/
s; gate
open circuit
t
gt
Gate controlled turn-on
I
TM
= 12 A; V
D
= V
DRM(max)
;
-
-
-
2
-
s
time
I
G
= 0.1 A; dI
G
/dt = 5 A/
s
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
107C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
= 180
120
90
60
30
BT136
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
122
119
116
113
110
107
104
101
1
-50
0
50
100
150
0
1
2
3
4
5
BT136
Tmb / C
IT(RMS) / A
107 C
10us
100us
1ms
10ms
100ms
10
100
1000
BT136
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
T2- G+ quadrant
0.01
0.1
1
10
0
2
4
6
8
10
12
BT136
surge duration / s
IT(RMS) / A
1
10
100
1000
0
5
10
15
20
25
30
BT136
Number of cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
December 1998
5
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BTA204
Tj / C
T2+ G+
T2+ G-
T2- G-
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
12
BT136
VT / V
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.27 V
Rs = 0.091 ohms
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
0.01
0.1
1
10
BT136
tp / s
Zth j-mb (K/W)
unidirectional
bidirectional
t
p
P
t
D
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IH(Tj)
IH(25C)
PDF 
ZIP