Philips Semiconductors
Product specification
Triacs
BT131 series
logic level
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated,
sensitive
gate
SYMBOL
PARAMETER
MAX.
MAX. UNIT
triacs in a plastic envelope, intended
for
use
in
general
purpose
BT131-
500
600
bidirectional switching and phase
V
DRM
Repetitive peak off-state voltages
500
600
V
control applications. These devices
I
T(RMS)
RMS on-state current
1
1
A
are intended to be interfaced directly
I
TSM
Non-repetitive peak on-state current
16
16
A
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
PINNING - TO92
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 2
2
gate
3
main terminal 1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
V
DRM
Repetitive peak off-state
-
500
1
600
1
V
voltages
I
T(RMS)
RMS on-state current
full sine wave; T
lead
51 C
-
1
A
I
TSM
Non-repetitive peak
full sine wave; T
j
= 25 C prior to
on-state current
surge
t = 20 ms
-
16
A
t = 16.7 ms
-
17.6
A
I
2
t
I
2
t for fusing
t = 10 ms
-
1.28
A
2
s
dI
T
/dt
Repetitive rate of rise of
I
TM
= 1.5 A; I
G
= 0.2 A;
on-state current after
dI
G
/dt = 0.2 A/
s
triggering
T2+ G+
-
50
A/
s
T2+ G-
-
50
A/
s
T2- G-
-
50
A/
s
T2- G+
-
10
A/
s
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
T1
T2
G
3 2 1
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
s.
April 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Triacs
BT131 series
logic level
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-lead
Thermal resistance
full cycle
-
-
60
K/W
junction to lead
half cycle
-
-
80
K/W
R
th j-a
Thermal resistance
pcb mounted;lead length = 4mm
-
150
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
-
0.4
3
mA
T2+ G-
-
1.3
3
mA
T2- G-
-
1.4
3
mA
T2- G+
-
3.8
7
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
-
1.2
5
mA
T2+ G-
-
4.0
8
mA
T2- G-
-
1.0
5
mA
T2- G+
-
2.5
8
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
-
1.3
5
mA
V
T
On-state voltage
I
T
= 2.0 A
-
1.2
1.5
V
V
GT
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
-
0.7
1.5
V
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 C
0.2
0.3
-
V
I
D
Off-state leakage current
V
D
= V
DRM(max)
; T
j
= 125 C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D
/dt
Critical rate of rise of
V
DM
= 67% V
DRM(max)
; T
j
= 125 C;
5
15
-
V/
s
off-state voltage
exponential waveform; R
GK
= 1 k
t
gt
Gate controlled turn-on
I
TM
= 1.5 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
-
2
-
s
time
dI
G
/dt = 5 A/
s
April 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Triacs
BT131 series
logic level
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus lead temperature T
lead
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
lead
51C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
0.2
0.4
0.6
0.8
1
1.2
0
0.2
0.4
0.6
0.8
1
1.2
1.4
=180
120
90
60
30
BT132D
0
0
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
1
113
101
89
77
65
53
41
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
BT132D
51 C
Tlead / C
IT(RMS) / A
10us
100us
1ms
10ms
100ms
10
100
1000
BT132D
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
T2- G+ quadrant
dI /dt limit
T
0.01
0.1
1
10
0
0.5
1
1.5
2.0
2.5
3
BT132D
surge duration / s
IT(RMS) / A
10
100
1000
0
BT136
Number of cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
5
10
15
20
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
April 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Triacs
BT131 series
logic level
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-lead
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT131
Tj / C
T2+ G+
T2+ G-
T2- G-
T2- G+
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
0
0.5
1
1.5
2
BT134W
VT / V
IT / A
Tj = 125 C
typ
max
Tj = 25 C
Vo = 1.0 V
Rs = 0.21 Ohms
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp / s
0.01
0.1
1
10
Zth j-sp (K/W)
100
t
p
P
t
D
unidirectional
bidirectional
BT134W
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IH(Tj)
IH(25C)
0
50
100
150
1
10
100
1000
Tj / C
dVD/dt (V/us)
April 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Triacs
BT131 series
logic level
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.2 g
Fig.13. TO92 ; plastic envelope.
Notes
1. Epoxy meets UL94 V0 at 1/8".
0.48
0.40
0.40
min
12.7 min
5.2 max
4.8 max
4.2 max
1.6
2.54
0.66
0.56
1
2
3
April 1998
5
Rev 1.000
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