Document Outline
- GENERAL DESCRIPTION
- PINNING
- LIMITING VALUES
- QUICK REFERENCE DATA
- PIN CONFIGURATION
- SYMBOL
- THERMAL RESISTANCES
- STATIC CHARACTERISTICS
- DYNAMIC CHARACTERISTICS
- MECHANICAL DATA
- MOUNTING INSTRUCTIONS
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
Philips Semiconductors
Product specification
Three quadrant triacs
BTA208S series D, E and F
guaranteed commutation
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
triacs in a plastic envelope suitable for
surface mounting, intended for use in
BTA208S-
600D
-
motor control circuits or with other highly
BTA208S-
600E
800E
inductive loads. These devices balance
BTA208S-
600F
800F
the
requirements
of
commutation
V
DRM
Repetitive peak off-state
600
800
V
performance and gate sensitivity. The
voltages
"sensitive gate" E series and "logic level"
I
T(RMS)
RMS on-state current
8
8
A
D series are intended for interfacing with
I
TSM
Non-repetitive peak on-state
65
65
A
low power drivers, including micro
current
controllers.
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
MT1
2
MT2
3
gate
tab
MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-600
-800
V
DRM
Repetitive peak off-state
-
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave;
-
8
A
T
mb
102 C
I
TSM
Non-repetitive peak
full sine wave;
on-state current
T
j
= 25 C prior to
surge
t = 20 ms
-
65
A
t = 16.7 ms
-
72
A
I
2
t
I
2
t for fusing
t = 10 ms
-
21
A
2
s
dI
T
/dt
Repetitive rate of rise of
I
TM
= 12 A; I
G
= 0.2 A;
100
A/
s
on-state current after
dI
G
/dt = 0.2 A/
s
triggering
I
GM
Peak gate current
-
2
A
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms
-
0.5
W
period
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
1
2
3
tab
T1
T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
s.
March 2002
1
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
BTA208S series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
full cycle
-
-
2.0
K/W
junction to mounting base
half cycle
-
-
2.4
K/W
R
th j-a
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14
-
75
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BTA208S-
...D
...E
...F
I
GT
Gate trigger current
2
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
-
5
10
25
mA
T2+ G-
-
5
10
25
mA
T2- G-
-
5
10
25
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
-
15
25
30
mA
T2+ G-
-
25
30
40
mA
T2- G-
-
25
30
40
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
-
15
25
30
mA
V
T
On-state voltage
I
T
= 10 A
-
1.65
V
V
GT
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
-
1.5
V
V
D
= 400 V; I
T
= 0.1 A;
0.25
-
V
T
j
= 125 C
I
D
Off-state leakage current
V
D
= V
DRM(max)
; T
j
= 125 C
-
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BTA208S-
...D
...E
...F
dV
D
/dt
Critical rate of rise of
V
DM
= 67% V
DRM(max)
;
20
60
70
-
V/
s
off-state voltage
T
j
= 110 C; exponential
waveform; gate open
circuit
dI
com
/dt
Critical rate of change of
V
DM
= 400 V; T
j
= 125 C;
2
5
14
-
A/ms
commutating current
I
T(RMS)
= 8 A;
dV
com
/dt = 10V/
s; gate
open circuit
dI
com
/dt
Critical rate of change of
V
DM
= 400 V; T
j
= 125 C;
6
10
20
-
A/ms
commutating current
I
T(RMS)
= 8 A;
dV
com
/dt = 0.1V/
s; gate
open circuit
2 Device does not trigger in the T2-, G+ quadrant.
March 2002
2
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
BTA208S series D, E and F
guaranteed commutation
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
102C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
2
4
6
8
10
0
2
4
6
8
10
12
= 180
120
90
60
30
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
121
117
113
109
105
101
1
-50
0
50
100
150
0
2
4
6
8
10
BT137
102 C
Tmb / C
IT(RMS) / A
10us
100us
1ms
10ms
100ms
10
100
1000
T / s
ITSM / A
dI /dt limit
T
T
ITSM
time
I
Tj initial = 25 C max
T
0.01
0.1
1
10
0
5
10
15
20
25
surge duration / s
IT(RMS) / A
1
10
100
1000
0
10
20
30
40
50
60
70
Number of half cycles at 50Hz
ITSM / A
T
ITSM
time
I
T
Tj initial = 25 C max
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
March 2002
3
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
BTA208S series D, E and F
guaranteed commutation
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Minimum, critical rate of change of
commutating current, dI
com
/dt versus junction
temperature,dV
com
/dt = 10 V/us
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
T2+ G+
T2+ G-
T2- G-
Tj/C
IGT(Tj)
IGT(25C)
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
VT / V
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.264 V
Rs = 0.0378 Ohms
10us
0.1ms
1ms
10ms
0.1s
1s
10s
0.01
0.1
1
10
tp / s
Zth j-mb (K/W)
t
p
P
t
D
bidirectional
unidirectional
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IL(Tj)
IL(25 C)
1
10
100
20
40
60
80
100
120
140
F TYPE
E TYPE
D TYPE
Tj/C
dIcom/dt (A/ms)
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25C)
March 2002
4
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
BTA208S series D, E and F
guaranteed commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
Fig.13. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.14. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
6.22 max
2.38 max
0.93 max
6.73 max
0.3
10.4 max
0.5
0.8 max
(x2)
2.285 (x2)
0.5
seating plane
1.1
0.5 min
5.4
4 min
4.6
1
2
3
tab
7.0
7.0
2.15
2.5
4.57
1.5
March 2002
5
Rev 2.000
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