Document Outline
- GENERAL DESCRIPTION
- QUICK REFERENCE DATA
- PINNING
- PIN CONFIGURATION
- SYMBOL
- LIMITING VALUES
- THERMAL RESISTANCES
- STATIC CHARACTERISTICS
- DYNAMIC CHARACTERISTICS
- PACKAGE OUTLINE
- MOUNTING INSTRUCTIONS
- DEFINITIONS
Philips Semiconductors
Product specification
Three quadrant triacs
BTA225B series B
high commutation
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
triacs in a plastic envelope suitable for
surface mounting, intended for use in
BTA225B-
500B
600B
800B
circuits where high static and dynamic
V
DRM
Repetitive peak off-state
500
600
800
V
dV/dt and high dI/dt can occur. These
voltages
devices will commutate the full rated
I
T(RMS)
RMS on-state current
25
25
25
A
rms current at the maximum rated
I
TSM
Non-repetitive peak on-state
180
180
180
A
junction temperature, without the aid
current
of a snubber.
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
mb
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
-800
V
DRM
Repetitive peak off-state
-
500
1
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave;
-
25
A
T
mb
91 C
I
TSM
Non-repetitive peak
full sine wave;
on-state current
T
j
= 25 C prior to surge
t = 20 ms
-
t = 16.7 ms
-
190
A
209
A
I
2
t
I
2
t for fusing
t = 10 ms
-
180
A
2
s
dI
T
/dt
Repetitive rate of rise of
I
TM
= 30 A; I
G
= 0.2 A;
100
A/
s
on-state current after
dI
G
/dt = 0.2 A/
s
triggering
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
1
3
mb
2
T1
T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Three quadrant triacs
BTA225B series B
high commutation
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
full cycle
-
-
1.0
K/W
junction to mounting base
half cycle
-
-
1.4
K/W
R
th j-a
Thermal resistance
minimum footprint, FR4 board
-
55
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
2
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
2
18
50
mA
T2+ G-
2
21
50
mA
T2- G-
2
34
50
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
-
31
60
mA
T2+ G-
-
34
90
mA
T2- G-
-
30
60
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
-
31
60
mA
V
T
On-state voltage
I
T
= 30 A
-
1.2
1.55
V
V
GT
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
-
0.7
1.5
V
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 C
0.25
0.4
-
V
I
D
Off-state leakage current
V
D
= V
DRM(max)
; T
j
= 125 C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D
/dt
Critical rate of rise of
V
DM
= 67% V
DRM(max)
; T
j
= 125 C;
1000
4000
-
V/
s
off-state voltage
exponential waveform; gate open circuit
dI
com
/dt
Critical rate of change of
V
DM
= 400 V; T
j
= 125 C; I
T(RMS)
= 25 A;
-
44
-
A/ms
commutating current
without snubber; gate open circuit
t
gt
Gate controlled turn-on
I
TM
= 30 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
-
2
-
s
time
dI
G
/dt = 5 A/
s
2 Device does not trigger in the T2-, G+ quadrant.
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Three quadrant triacs
BTA225B series B
high commutation
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
91C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
5
10
15
20
25
30
0
10
20
30
40
= 180
120
90
60
30
BTA140
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
115
105
95
85
1
-50
0
50
100
150
0
5
10
15
20
25
30
BTA140
91 C
Tmb / C
IT(RMS) / A
10us
100us
1ms
10ms
100ms
10
100
1000
BTA225
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01
0.1
1
10
0
10
20
30
40
50
BTA140
surge duration / s
IT(RMS) / A
1
10
100
1000
0
50
100
150
200
BTA140
Number of cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Three quadrant triacs
BTA225B series B
high commutation
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of change of commutating
current dI
com
/dt versus junction temperature.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BTA216
Tj / C
T2+ G+
T2+ G-
T2- G-
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
50
60
70
80
BTA140
VT / V
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.073 V
Rs = 0.015 ohms
typ
max
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
BTA140
tp / s
Zth j-mb (K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
t
p
P
t
D
bidirectional
unidirectional
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IH(Tj)
IH(25C)
20
40
60
80
100
120
140
1
10
100
1000
BTA225
Tj / C
dIcom/dt (A/ms)
September 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Three quadrant triacs
BTA225B series B
high commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.13. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
September 1997
5
Rev 1.100
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