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Электронный компонент: BU1507AX

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1507AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
700
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
P
tot
Total power dissipation
T
hs
25 C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 4 A; I
B
= 0.95 A
-
1.0
V
V
CEsat
Collector-emitter saturation voltage
I
C
= 4 A; I
B
= 0.8 A
-
5.0
V
I
Csat
Collector saturation current
f = 16kHz
4
-
A
t
f
Fall time
I
Csat
= 4 A; f = 16kHz
0.25
0.5
s
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
700
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
I
B
Base current (DC)
-
4
A
I
BM
Base current peak value
-
6
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
100
mA
-I
BM
Reverse base current peak value
1
-
5
A
P
tot
Total power dissipation
T
hs
25 C
-
45
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
with heatsink compound
-
3.7
K/W
R
th j-a
Junction to ambient
in free air
55
-
K/W
1 2 3
case
b
c
e
1 Turn-off current.
October 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1507AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
2.0
mA
T
j
= 125 C
I
EBO
Emitter cut-off current
V
EB
= 7.5 V; I
C
= 0 A
-
-
1.0
mA
BV
EBO
Emitter-base breakdown voltage
I
B
= 1 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
700
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltages I
C
= 4 A; I
B
= 0.8 A
-
-
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 4 A; I
B
= 0.8 A
-
-
1.1
V
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 5 V
-
17
-
h
FE
I
C
= 4 A; V
CE
= 5 V
5.0
7.0
9.0
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
68
-
pF
Switching times (16 kHz line
I
Csat
= 4 A; I
B(end)
= 0.7 A; L
B
= 6
H;
deflection circuit)
-V
BB
= 4 V
t
s
Turn-off storage time
5.0
6.0
s
t
f
Turn-off fall time
0.25
0.5
s
2 Measured with half sine-wave voltage (curve tracer).
October 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1507AX
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. Switching times test circuit.
Fig.4. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 1 V
Fig.5. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 5 V
Fig.6. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
IC
IB
VCE
ICsat
IBend
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
0.01
0.1
1
10
100
1
10
100
IC / A
hFE
VCE = 1 V
Ths = 25 C
Ths = 85 C
BU2507AF/X
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
BU2507AF/X
0.01
0.1
1
10
100
1
10
100
IC / A
hFE
VCE = 5 V
Ths = 25 C
Ths = 85 C
+ 150 v nominal
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
0.1
1
10
100
0.01
0.1
1
10
Ths = 25 C
Ths = 85 C
BU2507AF/X
IC / A
VCEsat / V
IC/IB = 3
IC/IB = 4
IC/IB = 5
October 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1507AX
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.8. Typical losses.
P
TOT
= f (I
B
); I
C
= 4 A; f = 16 kHz
Fig.9. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); I
C
= 4.0 A; T
j
= 85C; f = 16 kHz
Fig.10. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
= f (T
mb
)
Fig.11. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
0
0.5
1
1.5
2
0.6
0.7
0.8
0.9
1
1.1
1.2
IB / A
VBEsat / V
Ths = 25 C
Ths = 85 C
BU2507AF/AX
IC = 4 A
IC = 3 A
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
BU2507AF/DF/AX/DX
0
0.5
1
1.5
2
0.1
1
IB / A
Ptot / W
10
Ths = 25 C
Ths = 85 C
1E-06
1E-4
10E-2
1E+00
0.001
0.01
0.1
1
10
BU2507AF/X/DF/X
t / s
Zth / K/W
D =
t
p
t
p
T
T
P
t
D
D = 0
0.02
0.05
0.1
0.2
0.5
0
0.5
1
1.5
2
0
2
4
6
8
10
BU2507AF/AX/Df/DX85ts/tf
IB / A
ts/tf/ us
October 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1507AX
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
October 1997
5
Rev 1.100